新势力光电供应压力传感器芯片

新势力光电供应压力传感器芯片，采用高级电阻传感技术（STARe, Sensor Technology for AdvancedResistors），特点：稳定性高、适用于恶劣环境，该系列压力传感器芯片应用：腐蚀性、流动性、油性环境下的高精密压力传感测量，包括：汽车制造、工业、医疗、大型家电。 D-\'P31  
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5 <>agK]   Type	6 GevO3   Pressure	M%dl?9pbq   Min	fgz'C ?   Typ	e"8m+]   Max	f;; S   Unit
D_;n4<|.   The Pressure sensor chips are based onthe STARe (Sensor Technology for Advanced Resistors)
ucm.~1G(   Standard Line STARe, Piezoresistive chipsfor pressure measurements of 1 to 30 bar
)*AA9    SL21K-100k-A/GXX	>[3,qP]E   100 kPa	=;?PVAdu%#   40	5@r Zm4U   70	~k<31 ez   130	as47eZ0\   mV@5V
 B*~Bm.   SL21K-250k-A/GXX	_WkcJe`   250 kPa	NCh( -E   60	V5^b6$R@   100	&_x/Dzu!z   140
D0_x|a   SL21K-500k-A/GXX	vrEaNT$J-   500 kPa	C36.UZoc   60	/8-VC"   100	A2FU}Ym0=   140
wjGjVTtHs   SL21K-01M0-A/GXX	 `:   1.0 MPa	ZN]c>w[ )I   60	8@*|T?r   100	?01""Om    140
a/`Yh>ou   SL21K-03M0-A/GXX	NqfDY   3.0 MPa	9%k.GE   60	;77o%J'l   100	T7_ SO,X   140
SG o:FG   Industrial Line STARe, Piezoresistivechips for pressure measurements of 100 mbar to 400 bar
V# %spW   IL20L-10k0-GXX	'ah0IYe   10 kPa	2g8P$+;   30	Yt<PKs#E   60	sWCm[HpG   120	Q]'!FmXf   mV@5V
JF\viMfR   IL20L-35k0-A/GXX	9<r} s   35 kPa	<R8Z[H:bV   40	^"#rDP"v   100	*M<=K.*\G   160
>43yty\    IL20M-03M0-A/GXX	~F6gF7]z   3.0 MPa	? B!ZqJ#   60	^W05Z!}   100	._nKM5.   140
IbaL.t\>   IL20M-100k-A/GXX	R}26"+~   100 kPa	3^UsyZS)   60	dct#ECT   100	>Ga1p'8FtU   140
<vuX " 8   IL20M-250k-A/GXX	io'O vhf:   250 kPa	V-r<v1}M   60	vaZZzv{H   100	{4q:4i   140
0>MI*fnY"   IL20M-500k-A/GXX	j}*+-.YF   500 kPa	F}DD;K   60	WkIV   100	,FVy:"FR   140
dkp[?f)x   IL20M-01M0-A/GXX	LkB!:+v |B   1.0 MPa	}]?G"f t K   60	X1dG'PQ   100	k|C8sSH   140
,LO-!\L   IL20M-10M0-A/GXX	1y;zPJ<ntm   10.0 MPa	Z!eq/   200	e!Okc*,   250	m3-J0D<   300
^eRT8I   IL20M-40M0-AXX	,RO(k4   40.0 MPa	ljON_*   230	v|2j~   290	,O!aRvzap   350
0M98y!A 5^   High Stability Line STARe, Piezoresistivechips for pressure measurements of 60 mbar to 400 bar
Lc?O K"[m   HS20V-06k0-A/G/D05	.U%"oD   6 kPa	elB 8    60	WfN MyI   100	jy2nn:1#^   140	PlUjjJU   mV@5V
db~:5#*   HS20V-10k0-A/G/D05	/D+$|kmW]   10 kPa	V~Lq,oth   60	b15qy?`y   100	:/qO*&i,N   140
%MNV 5UA[w   HS20L-35k0-A/G/DXX	;#j82   35 kPa	L{p g?#\yC   60	W9'jzP   100	vDvGT<d   140
V/e_:xECC   HS20L-100k-A/G/DXX	0&@pX~h:   100 kPa	;~1JbP   60	H/Q)zDP   100	v{Vesf   140
qT @IY)e   HS20M-250k-A/G/DXX	V}-o):dI|   250 kPa	$t}1|q|   60	I9>*Yy5RNS   100	T_T{c+,Zd$   140
p>S/6 [X   HS20M-500k-A/G/DXX	J3;KQ}F.I   500 kPa	e`F|sz]k"H   60	nDy=ZsK   100	edx'p`%d5   140
G- WJlu   HS20M-01M0-A/G/DXX	V0i$"|F+E   1.0 MPa	qV,j)b3M   60	fM.|#eLi   100	Sw'?$j^3   140
F2'cL@E3   HS20M-03M0-A/G/XX	7gcG|kKT   3.0 MPa	d?Cl04   60	Iq\oB   100	;bE6Y]"Rz   140
Xs@ ^D,   HS20M-10M0-A/GXX	K~T\q_ZPZ   10.0 MPa	a*ymBGF   200	g1,   250	faX#KRpfd   300
f@L{*Upj+   HS20M-20M0-A08	MDt?7c   20.0 MPa	o#/iR]3   60	c F]3gM   100	Dj"=k L0   140
[)n}!5fE   HS20M-40M0-A08	|3ETF|)?   40.0 MPa	H H@xnd   60	k ]pD3.QJ   100	WEAXqDjM   140
p5VSSvV\K   Harsh Environmental Line, Piezoresistivechips for pressure measurements of 2 bar to 16 bar
%Oqe7Cx>+   HE11C-200K-AXX	s;$TX304   200 kPa	>+8I =S   60	IQ~7vk()   100	l}c2l'   140	VTfaZ/e.   mV@5V
4[0?F!%   HE11C-400K-AXX	i]%"s_l   400 kPa	t'x:fO?cp   60	6qpV53H   100	@A'1D@f#   140
w8I&:"^7<   HE11C-800K-AXX	5V8C+k)   800 kPa	=XlIe{   60	?<^AXLiKV   100	-wMW@:M_   140
2!?z%s-S   HE11C-01M6-AXX	#2ASzCe   1.6 MPa	ld:alEo   60	z ]N~_9w   100	X>8?p'*   140

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