新势力光电供应压力传感器芯片

新势力光电供应压力传感器芯片，采用高级电阻传感技术（STARe, Sensor Technology for AdvancedResistors），特点：稳定性高、适用于恶劣环境，该系列压力传感器芯片应用：腐蚀性、流动性、油性环境下的高精密压力传感测量，包括：汽车制造、工业、医疗、大型家电。 HJY_l  
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{.W$<y (j7   Type	Ga4Ru   Pressure	fo"dX4%}   Min	)^&,[Q=i   Typ	)N{Qpbh   Max	+C~,q{u   Unit
.x__X3P>\   The Pressure sensor chips are based onthe STARe (Sensor Technology for Advanced Resistors)
>$gWeFu   Standard Line STARe, Piezoresistive chipsfor pressure measurements of 1 to 30 bar
cJ 5":^O   SL21K-100k-A/GXX	:K!@zT=o   100 kPa	u~X]W3   40	;SBM 7fwRk   70	=rj5 q    130	Ga\E`J$c   mV@5V
wW4/]soM   SL21K-250k-A/GXX	MB<oWH[e)   250 kPa	H79|%@F"   60	uJ S+;H   100	MKd{y~'   140
RRaGc )B   SL21K-500k-A/GXX	-I1Ne^DZn4   500 kPa	r4}:t$   60	IX eb6j8   100	NpRT\cx3   140
_oxc~v\<   SL21K-01M0-A/GXX	LC5NB{b\%>   1.0 MPa	DUg   60	@DT${,.49   100	w < p   140
YQ>M&lnQ<   SL21K-03M0-A/GXX	%g3@m5&   3.0 MPa	GXC:~$N   60	Q!Rknj 2   100	kV7c\|N9   140
R1'bB"$   Industrial Line STARe, Piezoresistivechips for pressure measurements of 100 mbar to 400 bar
[`P+{ R   IL20L-10k0-GXX	c ?mCt0Cg   10 kPa	brN:Ypf-e   30	&?( r#T   60	A{Giz&p   120	/?l@7   mV@5V
<J=9,tv<   IL20L-35k0-A/GXX	<`EZ^S L;   35 kPa	}E$^!q{   40	![os5H.b#q   100	:)+|q   160
C7&4,],   IL20M-03M0-A/GXX	sfez0Uqe.~   3.0 MPa	*axOen   60	I%(`2rD8G   100	wm|{@z   140
+*[lp@zU{   IL20M-100k-A/GXX	q4$zsw   100 kPa	bH+p5Fd;   60	1R)4[oYN\<   100	$L>tV='   140
w">XI)*z   IL20M-250k-A/GXX	L.bR\fE    250 kPa	2.O ;   60	~4o2!!^tI   100	ppIMaP   140
me@4lHBR   IL20M-500k-A/GXX	{20^abUAS   500 kPa	+_uT1PsBY   60	!+&"y K@J   100	vINm2%*zJ   140
zN JK+_O=   IL20M-01M0-A/GXX	[Y.3miE   1.0 MPa	~a&s5E {   60	\I; lgz2   100	?:OL8&0   140
9mkt.>$   IL20M-10M0-A/GXX	?!1K@/!   10.0 MPa	qsX K4`   200	9vT@ mqKu   250	aoQK.7   300
v-2O{^n   IL20M-40M0-AXX	Da5Zz(   40.0 MPa	1Qui.],c   230	QbqEe/*$_   290	}s{RW<A   350
GQ ZEMy7   High Stability Line STARe, Piezoresistivechips for pressure measurements of 60 mbar to 400 bar
QkUq%}_0   HS20V-06k0-A/G/D05	y/rmxQtP   6 kPa	:9q=o|T6D   60	QPgM<ns   100	;>Y,b4B;   140	]N}80*Rl   mV@5V
to9 u%d8   HS20V-10k0-A/G/D05	*A.E?9pL\   10 kPa	?e9Acc`G5   60	]N!382   100	#p}I 84Q   140
3{ i'8   HS20L-35k0-A/G/DXX	{tMpI\>S   35 kPa	B!H46w~   60	AB40WCu]*   100	K5No6dsD   140
"P`V|g   HS20L-100k-A/G/DXX	'S\YNLqQ   100 kPa	<Hl.MS   60	wMNtN3   100	p< Emy%   140
udM<jY]5p   HS20M-250k-A/G/DXX	OoTMvZ P[   250 kPa	Z?|\0GR+`5   60	=FQ]eb*   100	`=^;q6f   140
SDpaW6(_   HS20M-500k-A/G/DXX	)| @'}k+   500 kPa	5xL%HX[S   60	) D:M_T2   100	O0Y/y2d   140
w ?]k$   HS20M-01M0-A/G/DXX	_svY.ps*   1.0 MPa	)B.NV<m   60	z(L \I   100	7 sZVN   140
q\*",xZxwz   HS20M-03M0-A/G/XX	;*ebq'D([   3.0 MPa	?3jOE4~aHr   60	Q`}1 B    100	\xJTsdd   140
6[>U F!.=   HS20M-10M0-A/GXX	_!6~o>   10.0 MPa	@/i{By^C   200	X'4e)E3*O   250	!4 `any   300
~Q%C>   HS20M-20M0-A08	'aMT^w4if)   20.0 MPa	 o\u3 1,   60	m~ :W$x1+   100	LyRto   140
Ub(zwR;   HS20M-40M0-A08	v+dt1;   40.0 MPa	bv,_7UOG   60	]^:l?F\h   100	WzYy<   140
v`#T)5gl-   Harsh Environmental Line, Piezoresistivechips for pressure measurements of 2 bar to 16 bar
(NrH)+)J!a   HE11C-200K-AXX	qV0C2jZ2   200 kPa	e.9oB<Etp   60	Zo   100	e{@TR x   140	~t\Hb8o   mV@5V
(r,tU(   HE11C-400K-AXX	c-8Pc]+g   400 kPa	r#LoBfM;^A   60	mwLp~z%OX   100	| W:JI   140
Q?rb(u(   HE11C-800K-AXX	j.OPDe{LU   800 kPa	\NwL#bQ~   60	v{9< ATi   100	^50#R<Ny   140
NidG|Yg~Z   HE11C-01M6-AXX	Un\h[m   1.6 MPa	>Z ZX]#=I   60	OV ~|@{6T   100	3l"7$B   140

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