新势力光电供应压力传感器芯片

新势力光电供应压力传感器芯片，采用高级电阻传感技术（STARe, Sensor Technology for AdvancedResistors），特点：稳定性高、适用于恶劣环境，该系列压力传感器芯片应用：腐蚀性、流动性、油性环境下的高精密压力传感测量，包括：汽车制造、工业、医疗、大型家电。 e5QOB/e&  
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:J<Owh@   Type	wE)] ah:   Pressure	Rz)v-Yu   Min	dP?nP(l   Typ	L(W%~UGN V   Max	B$@1QG   Unit
hZ%2?v`   The Pressure sensor chips are based onthe STARe (Sensor Technology for Advanced Resistors)
6^WiZ^~   Standard Line STARe, Piezoresistive chipsfor pressure measurements of 1 to 30 bar
P>>f{3e.   SL21K-100k-A/GXX	!,I7 ?O   100 kPa	^*HVP*    40	CZF^Wxk   70	|{zHM23gD   130	g9M')8a n   mV@5V
'9f6ZAnYpQ   SL21K-250k-A/GXX	A{G5Plrh   250 kPa	lp?i_p/z   60	7k.d|<mRv   100	 F|DR   140
,G/\@x%   SL21K-500k-A/GXX	D1oaG 0   500 kPa	~W2:NQ>i   60	-$'~;O3s   100	oXnC"y}0P   140
Iq^~   SL21K-01M0-A/GXX	b5lk0jA   1.0 MPa	SJso'6 g   60	[Od>NO,n+]   100	(xI)"{    140
H(   SL21K-03M0-A/GXX	8XLxT(YFIs   3.0 MPa	Xw&QrTDS`   60	+s#S{b   100	F<6KaZ|   140
=x|##7   Industrial Line STARe, Piezoresistivechips for pressure measurements of 100 mbar to 400 bar
?j &V:kF   IL20L-10k0-GXX	53g8T+`\(   10 kPa	e-L 5=B   30	M!;`(_2   60	vo:52tCk}m   120	Ukk-(gjX   mV@5V
)$2%&9b   IL20L-35k0-A/GXX	G1`mn$`kq   35 kPa	AAIyr703cQ   40	/vFxVBX   100	o=mq$Z:}   160
fvAh?<Ul   IL20M-03M0-A/GXX	j1'xp`jgv   3.0 MPa	> gA %MT   60	_ Yb Eo+   100	clPZd   140
gJ)h9e*m^   IL20M-100k-A/GXX	V0SW 5 m   100 kPa	N7RG5?   60	~frPV8^DP   100	-s?dzX   140
a'*5PaXU@/   IL20M-250k-A/GXX	.ruz l(6   250 kPa	Thht_3_C,f   60	bc0)'a\   100	f)u*Q!BDD   140
<3],C)Zwc   IL20M-500k-A/GXX	AAlmG9l&7   500 kPa	S*2L4Uj`|   60	z[0LU]b<   100	.,d$%lN   140
0`g}(}'L   IL20M-01M0-A/GXX	34++Rr [G   1.0 MPa	hy!'Q>[`   60	,J`lr U0   100	qH{8n`   140
aPY>fy^8D   IL20M-10M0-A/GXX	clR?< LO   10.0 MPa	k#IS,NKE   200	 "df13U"   250	HwVgT"   300
OI]K_ m3   IL20M-40M0-AXX	4$q)e<-   40.0 MPa	^J#*n;OQ3A   230	*`S)@'@:(   290	x|,aV=$o   350
gN!E*@7   High Stability Line STARe, Piezoresistivechips for pressure measurements of 60 mbar to 400 bar
"Dmw-   HS20V-06k0-A/G/D05	]"2 v7)e   6 kPa	+s*l#'Q   60	"t%1@b*u   100	ZB_16&2Ow   140	=?`y(k4a   mV@5V
I 1VEm?CQ   HS20V-10k0-A/G/D05	5u u2 _B_L   10 kPa	yG4LQE   60	&[W3e3Asra   100	P98X[0&   140
D<D k1   HS20L-35k0-A/G/DXX	$@:>7Y"   35 kPa	KHc/x8^9   60	#BT6bH08X   100	g.`t!6Hc   140
:}3qZX   HS20L-100k-A/G/DXX	.1[2 CjQ   100 kPa	oZ*=7u   60	xJF6l!`   100	v{rK_jq   140
n[MIa]dK   HS20M-250k-A/G/DXX	13>3R+o   250 kPa	zoJkDr=jn   60	#iqhm,u7D   100	13_+$DhU-L   140
Vf,~MG   HS20M-500k-A/G/DXX	hiK[!9r   500 kPa	p$b=r+1f   60	cJ(zidf_$   100	2t`9_z qLw   140
`9Q,=D+   HS20M-01M0-A/G/DXX	= "hY{RUa   1.0 MPa	[nPzhXs   60	,d [b"]Zy   100	Y5A~iGp8E   140
g%q?2Nv   HS20M-03M0-A/G/XX	>s 8:1l   3.0 MPa	)r6SGlE[Y   60	xO9]yULgu   100	D-+)M8bt   140
CXP $bt}   HS20M-10M0-A/GXX	 4pTuP /   10.0 MPa	1~xn[acy   200	tm36Lw   250	A@   300
-JQg ~1   HS20M-20M0-A08	)zLS,/pk^   20.0 MPa	ga1gd~a   60	5vh"PlK`s   100	eze(>0\f   140
5t5S{aCDr   HS20M-40M0-A08	FnQ_=b   40.0 MPa	f$S QhK5`   60	m)]fJ_   100	\|>`z,;   140
3f2Hjk7,d   Harsh Environmental Line, Piezoresistivechips for pressure measurements of 2 bar to 16 bar
7%"\DLA   HE11C-200K-AXX	:_YG/0%I   200 kPa	\`%Y-!H+v   60	y[5P<:&s   100	wyA(}iSq   140	WoWM   mV@5V
; # ?0#):-   HE11C-400K-AXX	gjN!_^_   400 kPa	>\oJ&gdc   60	i6ypx   100	Q3O .<9S   140
'St= izhd   HE11C-800K-AXX	hy&Hl   800 kPa	qfH~hg   60	${?exnb$   100	@G$<6CG\   140
llG#nDe   HE11C-01M6-AXX	2:5gMt   1.6 MPa	+=H>s;B   60	GxDF7 z%&   100	ZO0]+Ko   140

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