新势力光电供应压力传感器芯片

新势力光电供应压力传感器芯片，采用高级电阻传感技术（STARe, Sensor Technology for AdvancedResistors），特点：稳定性高、适用于恶劣环境，该系列压力传感器芯片应用：腐蚀性、流动性、油性环境下的高精密压力传感测量，包括：汽车制造、工业、医疗、大型家电。 J]Rh+@r.  
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us.IdG   Type	19%zcYTe   Pressure	~w.y9)",   Min	Xc~BHEp   Typ	!:}m-iqQ1   Max	bh3yH>Zns   Unit
P5GV9SA   The Pressure sensor chips are based onthe STARe (Sensor Technology for Advanced Resistors)
Zt9ld=T   Standard Line STARe, Piezoresistive chipsfor pressure measurements of 1 to 30 bar
(aq-aum-I   SL21K-100k-A/GXX	:z%Zur+n c   100 kPa	u EERNo&   40	NH*"AE;   70	}U%T6~_wR   130	r-Y7wM`TZ   mV@5V
@twi<U_   SL21K-250k-A/GXX	u('`.dwkc   250 kPa	31QDN0o!~   60	#<#-Bv   100	$ % B   140
cxx8I   SL21K-500k-A/GXX	@CoUFdbz   500 kPa	6^2='y~e   60	|Nadk(}   100	. K_Jg$3   140
Oh,Xjel   SL21K-01M0-A/GXX	*_H]?&   1.0 MPa	xmfZ5nVL   60	xl,6O!aR   100	?D(aky#cyc   140
2+*o^`%4P   SL21K-03M0-A/GXX	vN~joQ=d   3.0 MPa	j9-.bGtm?.   60	H.o3d/8:   100	4ti,R'   140
7;Vmbt9   Industrial Line STARe, Piezoresistivechips for pressure measurements of 100 mbar to 400 bar
*r7%'K{C   IL20L-10k0-GXX	k`s_31<   10 kPa	tJGK9!MH{(   30	%_~1(Glz   60	bw! *=<   120	f'BmIFb#   mV@5V
j+>N&.zs   IL20L-35k0-A/GXX	0_=^#r4Mu   35 kPa	[jGE{<Je   40	K@{R?j/+   100	GgE 38~A4   160
Vl'rO_?t   IL20M-03M0-A/GXX	9%m ^^OOf   3.0 MPa	-U\s.FI.AR   60	?u0qYep:   100	NceK>::56   140
E 5mYFVK   IL20M-100k-A/GXX	Zv9%}%7p   100 kPa	iRM ?_ |   60	FtDF }   100	-$,'|\Y   140
i?|u$[^=+   IL20M-250k-A/GXX	Or55_E   250 kPa	[fs.D /   60	t@iw&>8z   100	pr1kYMrqri   140
A+z}z@K   IL20M-500k-A/GXX	r[#*..Y   500 kPa	tg9{(_t/W   60	):n'B` f}z   100	_,f7D/dq   140
nB}eJD|   IL20M-01M0-A/GXX	6QNZ/Ox:   1.0 MPa	<S12=<c?'   60	N{6-a   100	Hr \vu`p$   140
m;qqjzy   IL20M-10M0-A/GXX	s%A?B8,   10.0 MPa	n1b^o~agwC   200	cs[n FfM   250	db>"2 EE   300
|;"(C# B   IL20M-40M0-AXX	Jn9{@??   40.0 MPa	&gI*[5v   230	4.>y[_vu   290	i1GQ=@   350
#E#@6ZomT   High Stability Line STARe, Piezoresistivechips for pressure measurements of 60 mbar to 400 bar
f9O_M1=|lo   HS20V-06k0-A/G/D05	^,J>=>,1\   6 kPa	vOl3utu7   60	a|k*A&5u2   100	QoMa+QTuc   140	R''2o_F6   mV@5V
" ^!=e72   HS20V-10k0-A/G/D05	cs4IO O$   10 kPa	8 k_hX^   60	/74)c~.W   100	|`+ (O   140
cmY `$=   HS20L-35k0-A/G/DXX	lQ4$d{m`   35 kPa	*g4Uo{   60	J8[aVG   100	XG5"u   140
om6`>I*   HS20L-100k-A/G/DXX	*r|13|k   100 kPa	;Q[E>j?w=   60	zXxA"   100	\)2'+R   140
\7e4t   HS20M-250k-A/G/DXX	j_b/66JyN   250 kPa	4I. )>+8V   60	}s8xr>   100	EEvi_Z932   140
51ILR9 Bc_   HS20M-500k-A/G/DXX	jPg[LZQ'   500 kPa	g<:TsP'|   60	OfeM;)   100	${97G#   140
d-gcXaA-8   HS20M-01M0-A/G/DXX	]|[mwC4   1.0 MPa	=r&i`L{]   60	yz)Nco]   100	&0{&4,   140
~W3t(\B'   HS20M-03M0-A/G/XX	Mv:\ T%]   3.0 MPa	V-"#Kf9   60	ghk"XJ|   100	cu#r#0U-   140
e|^.N[W   HS20M-10M0-A/GXX	oMNBK/X_   10.0 MPa	cq/@ng*o   200	dx.Jv/Mb   250	J@rBrKC   300
Xod/GYG   HS20M-20M0-A08	TnuA uui*   20.0 MPa	V0_^==Vs   60	Ol;"}3*Z*   100	4UN|`'c   140
r_o\72   HS20M-40M0-A08	B.);Ju   40.0 MPa	V]Uc@7S/   60	r]S"i$   100	}xgs]\^,73   140
6f+@@=Xc   Harsh Environmental Line, Piezoresistivechips for pressure measurements of 2 bar to 16 bar
8C I\NR{x8   HE11C-200K-AXX	Z,>owoP4   200 kPa	)?(_vrc<   60	*QoQ$alHH   100	&7eN EA   140	<4I`|D3@   mV@5V
HYNpvK   HE11C-400K-AXX	1([?EfC   400 kPa	_znpzr9H   60	/8/N   100	%)e&"mq!|   140
pQ8f$I#v   HE11C-800K-AXX	}3-`e3   800 kPa	-8SZ}J   60	3RI%OCGF   100	`mquGk|)   140
r6nWrO>y   HE11C-01M6-AXX	%htwq]rZd   1.6 MPa	jTqEV(   60	*(sv5c!0M8   100	Y*S(uqM   140

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