新势力光电供应压力传感器芯片

新势力光电供应压力传感器芯片，采用高级电阻传感技术（STARe, Sensor Technology for AdvancedResistors），特点：稳定性高、适用于恶劣环境，该系列压力传感器芯片应用：腐蚀性、流动性、油性环境下的高精密压力传感测量，包括：汽车制造、工业、医疗、大型家电。 ,S!w'0k|n  
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hs(W;tR@W   Type	g_z/{1$   Pressure	;`UecLb#   Min	Fo}7hab   Typ	{rXs:N@   Max	_~M^ uW^l   Unit
&=Y e6 f[   The Pressure sensor chips are based onthe STARe (Sensor Technology for Advanced Resistors)
!#}7{   Standard Line STARe, Piezoresistive chipsfor pressure measurements of 1 to 30 bar
wa:0X)KC ?   SL21K-100k-A/GXX	&HDP!SLS   100 kPa	:2y"3azxk   40	op@iGC+   70	6+`tn   130	+iA=y=;blH   mV@5V
z-,VnhLx   SL21K-250k-A/GXX	e;ty!)]   250 kPa	T3pdx~66   60	DC:)Ysuj   100	}V`mp   140
]'h; {;ug   SL21K-500k-A/GXX	fn}UBzED\   500 kPa	hfrnxeM#~   60	o6L9UdT    100	zp4W'8   140
L CSeOR   SL21K-01M0-A/GXX	(OmH~lSO.   1.0 MPa	YZE.@Rz   60	H{(]9{   100	2R.2D'4)`   140
>M;u*Go`QO   SL21K-03M0-A/GXX	xf,5R9g/   3.0 MPa	aGoE,5   60	.p&Yr%~   100	.}`hCt08   140
Qa`hR   Industrial Line STARe, Piezoresistivechips for pressure measurements of 100 mbar to 400 bar
IL!=mZ>2O   IL20L-10k0-GXX	`<fh+*   10 kPa	<@uOCRbV   30	DQXS$uBT   60	cQUC.TZ_   120	0q6I;$H   mV@5V
cAuY4RV   IL20L-35k0-A/GXX	x\@*60o   35 kPa	tE"Si<[]H$   40	p{Sh F.   100	Hs(D/&6%   160
K_/B?h   IL20M-03M0-A/GXX	6}dR$*=   3.0 MPa	Es'Um,ku   60	3,eIB(   100	}e]f   140
O'DW5hBL0   IL20M-100k-A/GXX	.tXtcf/   100 kPa	(pR.Abq   60	2eP;[o   100	}5 9U}@xC   140
-yx/7B5@   IL20M-250k-A/GXX	r':TMhzHq?   250 kPa	bGXR7u&K   60	adO&_NR   100	pW?&J>\6   140
Y)I8eU{Wl(   IL20M-500k-A/GXX	cO#oH2}   500 kPa	^U q   60	(lH,JX`$a   100	%$ceJ`%1e   140
8cWZ"v   IL20M-01M0-A/GXX	UlovXb   1.0 MPa	`,>wC+}   60	7C,T&g 1:   100	v."Dnl   140
>'=MH2;   IL20M-10M0-A/GXX	9w4sSj`   10.0 MPa	2WBq   200	P=8>c'Q   250	+a +`Z>   300
)j&"%[2F   IL20M-40M0-AXX	H{G{H=K_   40.0 MPa	_}Ps(_5D   230	6[dur'x   290	GG6%bF   350
mDMt5(.    High Stability Line STARe, Piezoresistivechips for pressure measurements of 60 mbar to 400 bar
j|(Z#3J   HS20V-06k0-A/G/D05	w YNloU   6 kPa	Ca>&   60	/2uQCw&x-   100	1yqoA*   140	=hH.zrI6e   mV@5V
${&5]!E[>D   HS20V-10k0-A/G/D05	E l&h;N   10 kPa	e$/B_o7(   60	15H6:_+=0   100	Y:QD   140
mxG]kqi   HS20L-35k0-A/G/DXX	h3G.EM:eG   35 kPa	7^e +   60	tbDoP Y   100	Q5+_u/   140
)9j06(<A   HS20L-100k-A/G/DXX	c+' =hR[   100 kPa	oR#:NtX @   60	woOy*)@   100	%Z]'!X   140
&<x@1,   HS20M-250k-A/G/DXX	b\55,La   250 kPa	,TC;{ $O5   60	Z@rN_WXx   100	y&J@?Hc>   140
{bNXedZ\   HS20M-500k-A/G/DXX	7,$z;Lr0S   500 kPa	!dcwq;Ea   60	j6}R7$JR   100	'` Cs pY   140
%"$@%"8;3   HS20M-01M0-A/G/DXX	-p,x&h,p   1.0 MPa	:VA.QrKW   60	qCMl!g'   100	b`mj_b   140
9ptFG]lZ   HS20M-03M0-A/G/XX	hP@(6X,"   3.0 MPa	D^F{uDlb   60	#=e;?w   100	ik,lSTBD   140
}E^S]hdvz   HS20M-10M0-A/GXX	alFjc.~}   10.0 MPa	i rBDGT~   200	q }C+tn"\   250	&~DTZgY   300
n]!fO 6kj   HS20M-20M0-A08	6)gd^{   20.0 MPa	Z0,~V   60	LxN*)[Wb   100	<I*x0BM=   140
?:rx1}:F   HS20M-40M0-A08	J]/}ojW3   40.0 MPa	V~{ _3YY   60	SpTdj^]4>   100	ni CE\B~   140
-0HkTY   Harsh Environmental Line, Piezoresistivechips for pressure measurements of 2 bar to 16 bar
KU&G;ni2   HE11C-200K-AXX	D@YP7   200 kPa	"i)Yvh[y   60	/i|z.nNO   100	fp>.Owt%.   140	|PVt}*0"   mV@5V
sYbH |}   HE11C-400K-AXX	TJ@Cjy%   400 kPa	x<(b|2qf   60	S9sR#   100	w2gf&Lc\   140
1'w:`/_   HE11C-800K-AXX	n(Y%Vmy   800 kPa	3HV%4nZLf   60	tV;%J4E'   100	cSP*f0n,eo   140
M++0zh S   HE11C-01M6-AXX	l3i,K^YL   1.6 MPa	j#A%q"]8   60	m7]hJ,0   100	>%b\yl%0   140

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