新势力光电供应压力传感器芯片

新势力光电供应压力传感器芯片，采用高级电阻传感技术（STARe, Sensor Technology for AdvancedResistors），特点：稳定性高、适用于恶劣环境，该系列压力传感器芯片应用：腐蚀性、流动性、油性环境下的高精密压力传感测量，包括：汽车制造、工业、医疗、大型家电。 U!&_mD#
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9- xlvU, o   Type	R"U/RS   Pressure	XM6".eF)M   Min	~u /aOd   Typ	s\'y-UITi1   Max	`DLp<_z>   Unit
7/H^<%;y   The Pressure sensor chips are based onthe STARe (Sensor Technology for Advanced Resistors)
CmEpir{}(   Standard Line STARe, Piezoresistive chipsfor pressure measurements of 1 to 30 bar
iHAU|`'N)   SL21K-100k-A/GXX	4\LZD{   100 kPa	lWx   40	yoBgr7g S   70	;,1=zhKU.   130	Go>wo/Sb   mV@5V
B_{HkQ.PW   SL21K-250k-A/GXX	M1oPOC\0.   250 kPa	q$r&4s)To   60	GE1i+.+-.   100	XE_ir Et   140
'yp>L|   SL21K-500k-A/GXX	ZgV~W#t   500 kPa	'lJEHz\   60	e`i7ah;   100	.L9']zXc`   140
=p<?Hu   SL21K-01M0-A/GXX	{?E<](+0   1.0 MPa	9-0<*)"b>   60	pzp,t(%j   100	1/B]TT   140
n(g)UNx   SL21K-03M0-A/GXX	L}'Yd'   3.0 MPa	*7ZGq(O   60	'|A|vCRCG   100	Hd9XfU   140
^ eQFg>   Industrial Line STARe, Piezoresistivechips for pressure measurements of 100 mbar to 400 bar
qnB<k,8T   IL20L-10k0-GXX	dsJm>U)   10 kPa	@q K]JK   30	WRWWskP   60	vCw<G6tD   120	qO-9 x0v#   mV@5V
-LtK8wl^   IL20L-35k0-A/GXX	C5xag#Z1   35 kPa	(n,u|} 8Y   40	<aJ$lseG   100	Ck\7F?S   160
r-}-C!   IL20M-03M0-A/GXX	>M]6uf   3.0 MPa	rQ/,XH   60	x2co>. i   100	WJ|:kuF   140
bLzs?eos   IL20M-100k-A/GXX	^W~p..DF   100 kPa	S}(8f!9<   60	]hA,LY f   100	V A<5uk04K   140
pY@Y?Jj   IL20M-250k-A/GXX	q2hFOm   250 kPa	-w1@!Sdd   60	As~(7?]r   100	+Y}V3(w9X   140
;}qhc l+   IL20M-500k-A/GXX	 ~*M$O&   500 kPa	?+~cA^-3T   60	| ?d#eQ9a   100	Wy4$*$   140
 8"%RCE   IL20M-01M0-A/GXX	Z&Y=`GOI   1.0 MPa	TX}T|ri   60	*)<B0SjT   100	V8WFQdXc   140
f$.?$   IL20M-10M0-A/GXX	7Vu?   10.0 MPa	Df4+^B,1   200	'OkGReKt   250	=^&%9X   300
]0c+/ \b&   IL20M-40M0-AXX	VA]e   40.0 MPa	eg/<[ A:   230	6KHN&P   290	BHA9 23p?   350
3*ixlO:qGk   High Stability Line STARe, Piezoresistivechips for pressure measurements of 60 mbar to 400 bar
POAw M   HS20V-06k0-A/G/D05	0*;O?T   6 kPa	Su8|R"qU   60	7j$Pt8$   100	%zBCq"y   140	&Lm-()wb   mV@5V
uR;gVO+QC   HS20V-10k0-A/G/D05	UlcH%pxTt1   10 kPa	6"/WZmOp   60	59r_#(uo   100	OFk8>"|   140
'sh~,+g   HS20L-35k0-A/G/DXX	h.eM RdlO   35 kPa	\f:z+F!6R   60	6at1bQ$   100	^EELaG   140
B9R(&<4   HS20L-100k-A/G/DXX	.IarkeCtb   100 kPa	Cx<0 H   60	* \}}Bv+9   100	|re}6#TgcT   140
{@W9 3=Vq8   HS20M-250k-A/G/DXX	p;T{i._iL   250 kPa	;U9J++\d<A   60	*&BnF\?m   100	}`(N:p   140
P{ OAV+cG   HS20M-500k-A/G/DXX	cD*}..-/4   500 kPa	dU)]:>Uz   60	\Ig68dFf%   100	#Z+i~t{e(   140
r;BT,jiX   HS20M-01M0-A/G/DXX	&H}r%%|A   1.0 MPa	kOOGw:/   60	Fm\"{) V:b   100	E 99hlY~1:   140
5r~#0Zf*   HS20M-03M0-A/G/XX	6!x&LoM   3.0 MPa	>Y7a4~ufko   60	~Q{QM:k   100	Y3.$G1{#0w   140
ca i<,3H   HS20M-10M0-A/GXX	<+MyZM(z>   10.0 MPa	IV%zO+   200	6E(Qx~iL   250	[(Xy.L7x   300
&Z(K6U#.   HS20M-20M0-A08	qm/Q65>E   20.0 MPa	gE#>RM5D   60	)?+$x[f!*   100	P-F)%T[   140
d->|EJP   HS20M-40M0-A08	;!:U((wv   40.0 MPa	vEf4HZ&w   60	+$4(zPs@   100	Xq'cA9v=$J   140
#^m0aB7r   Harsh Environmental Line, Piezoresistivechips for pressure measurements of 2 bar to 16 bar
)u))n#P   HE11C-200K-AXX	^`un'5Vk   200 kPa	9T#;,{VQ   60	DPi_O{W>   100	QXCH(5as   140	fYKOJ5f   mV@5V
COH<Tj   HE11C-400K-AXX	:0Z^uuk`gq   400 kPa	"KcA   60	+)JpUqHa   100	:#dE:L;T   140
r0p w_j   HE11C-800K-AXX	d%l{V6   800 kPa	%%(R@kh9   60	I*9e]m"   100	U(~+o   140
+`3!I   HE11C-01M6-AXX	Gt9&)/#   1.6 MPa	9x,RvWTb   60	Aw&tP[N[   100	]HpA5q1ck   140

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