新势力光电供应压力传感器芯片

新势力光电供应压力传感器芯片，采用高级电阻传感技术（STARe, Sensor Technology for AdvancedResistors），特点：稳定性高、适用于恶劣环境，该系列压力传感器芯片应用：腐蚀性、流动性、油性环境下的高精密压力传感测量，包括：汽车制造、工业、医疗、大型家电。 id9QfJ9t  
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i kfJ!f   Type	0=HB!{@   Pressure	VC/n}7p   Min	m   uO.   Typ	HcIJ&".~   Max	z{OL+-OY   Unit
Mu`_^gG   The Pressure sensor chips are based onthe STARe (Sensor Technology for Advanced Resistors)
(LTu=1   Standard Line STARe, Piezoresistive chipsfor pressure measurements of 1 to 30 bar
m]U   SL21K-100k-A/GXX	LAk  .f   100 kPa	I= :yfW   40	XlF,_   70	GEy7Vb)   130	J&\Q3_vro9   mV@5V
(v?@evQ   SL21K-250k-A/GXX	M**Sus87Q   250 kPa	Xk|a%%O*H   60	=I'iD0eR   100	]_B<K5   140
TW&s c9   SL21K-500k-A/GXX	#g$I>\O<   500 kPa	!b!An; ',   60	16Ka>=G   100	TU_'1   140
bX38=.up   SL21K-01M0-A/GXX	#0r^<Yn   1.0 MPa	[x7Rq_^   60	h*;c "/7   100	'{cND   140
U3Gg:onuE   SL21K-03M0-A/GXX	2&S^\kf   3.0 MPa	0);5cbV7i   60	?&:N|cltD   100	^n~Kr1}nj   140
YvG$2F|_)   Industrial Line STARe, Piezoresistivechips for pressure measurements of 100 mbar to 400 bar
X_X7fRC0   IL20L-10k0-GXX	]~ N.   10 kPa	Hz,Gn9:p   30	=AaF$R   60	}*!L~B!   120	g5 *E\T%8   mV@5V
m$[:J   IL20L-35k0-A/GXX	8HLL3H0   35 kPa	5,XEN$^   40	Z*3RI5)dx   100	J ##a;6@   160
2|ee`"`   IL20M-03M0-A/GXX	~ a 2A"#f   3.0 MPa	(BH<\&yHE   60	V8F!o   100	DmgDhNXKq   140
_gK}Gi?|   IL20M-100k-A/GXX	[4qvQ7Y !   100 kPa	uYs45 G   60	DHn\ =M   100	,~$sJ2 g7   140
CaCApL   IL20M-250k-A/GXX	P2ySjgd   250 kPa	~-sgk"$   60	`>KNa"b%$   100	A1B[5a*o!   140
Rh~j -;   IL20M-500k-A/GXX	tAjT-CXg   500 kPa	3?aM\z;   60	2vUcSKG7   100	G$*=9`   140
h;E.y    IL20M-01M0-A/GXX	& VU^d3gv~   1.0 MPa	/C`AA/@   60	(@T{ [\   100	~,F]~|U7l   140
 3k6Dbz   IL20M-10M0-A/GXX	<au_S\n   10.0 MPa	=?Co<972Z   200	;gHcDnH)   250	[Ti' X#   300
dXn$XGF%R   IL20M-40M0-AXX	v^/<2/E"?4   40.0 MPa	K 7x;/O   230	 nmL|v   290	\A!Iln   350
6U|"d[   High Stability Line STARe, Piezoresistivechips for pressure measurements of 60 mbar to 400 bar
l8Yr]oNkz   HS20V-06k0-A/G/D05	WM$Z?CN%KB   6 kPa	-1d$w`   60	Y/mfBkh   100	xV`)?hEXFh   140	wuCZz{c7   mV@5V
!f!YMpN   HS20V-10k0-A/G/D05	&j'k9C2p   10 kPa	~tNk\Kkv   60	 5B1,,8P   100	p8s%bPjK   140
[D?xd/G   HS20L-35k0-A/G/DXX	C_[  d   35 kPa	C2iOF/4   60	Q.8^F   100	=fy.'+   140
{9@E[bWp#   HS20L-100k-A/G/DXX	HF&dHD2f   100 kPa	<T'fJcR   60	0^2e^qf   100	7|J&fc5BP   140
][OkydE   HS20M-250k-A/G/DXX	s!Id55R]   250 kPa	~d3BVKP5   60	^^ xzaF   100	RHu,t5,   140
)OlYz!#?   HS20M-500k-A/G/DXX	YSZ [~?+   500 kPa	&7,/^ >">   60	&$qIJvMiK   100	nu|?F\o!   140
_ -ec(w~/   HS20M-01M0-A/G/DXX	>X>]QMfh   1.0 MPa	}ZwnG=7T?   60	(Zy=e?E,   100	S[rfcL"   140
!P6y_Frpe   HS20M-03M0-A/G/XX	7` XECIh   3.0 MPa	hB:+_[=Kj.   60	e [F33%   100	zlh\P`   140
FQJFq6l   HS20M-10M0-A/GXX	,*p(q/kJh~   10.0 MPa	zzKU s"u   200	}u5J<*:bZ   250	.= 8Es#   300
fG7-0 7   HS20M-20M0-A08	"bjbJC&T   20.0 MPa	P_@ty~u   60	\>eFs} Y/   100	hn/SS   140
/hyCR___   HS20M-40M0-A08	Hp fTuydU   40.0 MPa	N L ceBok   60	KkHlMw v   100	L\<J|87p?   140
}M\G   Harsh Environmental Line, Piezoresistivechips for pressure measurements of 2 bar to 16 bar
- 1!s8G   HE11C-200K-AXX	1Imb"E   200 kPa	qkyYt#4E   60	eR8>5:V_   100	Xb*>7U/'T   140	D <Fl7QAb   mV@5V
iB'g7&,L   HE11C-400K-AXX	U09@pne8   400 kPa	;77q~_g$   60	-| t|w:&   100	]JHY(H 2|   140
xWty2/!h   HE11C-800K-AXX	1]jUiX=T   800 kPa	z;i4F.p   60	a% 82I::t   100	M$LzV}k   140
EY! P"u;   HE11C-01M6-AXX	Jbz>j\   1.6 MPa	AzBpQb*   60	e-o$bf%   100	o&:n>:im   140

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