新势力光电供应压力传感器芯片

新势力光电供应压力传感器芯片，采用高级电阻传感技术（STARe, Sensor Technology for AdvancedResistors），特点：稳定性高、适用于恶劣环境，该系列压力传感器芯片应用：腐蚀性、流动性、油性环境下的高精密压力传感测量，包括：汽车制造、工业、医疗、大型家电。 ktF\f[  
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w5Lev}Rb   Type	N)CM^$(T|   Pressure	B6UTooj   Min	2PZ#w(An&   Typ	r`-=<@[   Max	Wz{,N07Q#{   Unit
\D67J239E   The Pressure sensor chips are based onthe STARe (Sensor Technology for Advanced Resistors)
5y^I~"_i   Standard Line STARe, Piezoresistive chipsfor pressure measurements of 1 to 30 bar
V?t56n Y}   SL21K-100k-A/GXX	-A1@a=q   100 kPa	^-nL!>FYY   40	`s8*n(\h   70	q8 &\;GK|   130	A cHr X=O   mV@5V
FT8<a }o   SL21K-250k-A/GXX	T"IDCT'z   250 kPa	88uoA6Y8h   60	fbg:rH\_   100	= q\TWz   140
:Eb=jWA   SL21K-500k-A/GXX	H^ds<I<)   500 kPa	{HO,d{{   60	MZd ?cS   100	+,xluwv$9   140
h[ cqa   SL21K-01M0-A/GXX	k^@dDLr"   1.0 MPa	@b&_xT   60	4++ &P9   100	S\M +*:7   140
TTagZ I$   SL21K-03M0-A/GXX	&v)/mc7D   3.0 MPa	.+) AeGh   60	zFi)R }Ot   100	w!_6*   140
-JfqY?Ue_2   Industrial Line STARe, Piezoresistivechips for pressure measurements of 100 mbar to 400 bar
xp*Wf#BF   IL20L-10k0-GXX	# J'V,_wH   10 kPa	]xxE_B7   30	PiIP%$72O   60	Og-v][   120	2WUl8?f2Y   mV@5V
}IRD!   IL20L-35k0-A/GXX	S'(IG m4   35 kPa	vd9PBN   40	P R3i}y>   100	mr QT:B\8   160
M{t/B-'4   IL20M-03M0-A/GXX	NOSLb];   3.0 MPa	bx%Ky0Z   60	ujWC!*W(Q   100	SuA  @S   140
S&F[\4w5]   IL20M-100k-A/GXX	BU<Qp$&   100 kPa	:#OaE,   60	tISb ' ^T   100	4(? Z1S   140
/H*[~b   IL20M-250k-A/GXX	kq*IC &y   250 kPa	soOfk!b   60	>r>pM(h   100	yu}T><Wst   140
1RauI0d*   IL20M-500k-A/GXX	]E|E4K6g   500 kPa	$\#wsI(   60	,f~)CXNT?   100	hAJ^(|   140
bg2r   IL20M-01M0-A/GXX	P N(<=v&E   1.0 MPa	&,QBJx<#   60	qzWnl[3   100	RF [81/w]   140
79uAsI2-Y   IL20M-10M0-A/GXX	ZEB,Q~   10.0 MPa	by$S#ef   200	io w"X6_l_   250	=%S*h)}@   300
PKZMuEEy,   IL20M-40M0-AXX	)0\D1IFJ   40.0 MPa	WM0-F@_   230	%<>|cO   290	&x3R+(H {   350
8w ]'U   High Stability Line STARe, Piezoresistivechips for pressure measurements of 60 mbar to 400 bar
* Na8w'Q   HS20V-06k0-A/G/D05	O{Z bpa^   6 kPa	_=K\E0I.m   60	geNvp0   100	C_ W%]8u   140	7WHq'R{@   mV@5V
L4<=,}KS   HS20V-10k0-A/G/D05	)%q )!x   10 kPa	v807)JwS   60	{tuGkRY2~   100	E8.1jCL>{"   140
CtHsi8m   HS20L-35k0-A/G/DXX	KkSv23In   35 kPa	SQ`KR'E   60	([NS%   100	#U6~U6@   140
)gG_K$08?   HS20L-100k-A/G/DXX	H284 ]i   100 kPa	v "sN K   60	~V/?/J$   100	#"TL*p   140
`L"l{^cH   HS20M-250k-A/G/DXX	`8D'r|=`Eh   250 kPa	3JZ9 G79H   60	Zzv,p   100	R}$A>)%dx   140
CMfR&G,)   HS20M-500k-A/G/DXX	960rbxKy3   500 kPa	xKXD`-|W   60	e9eBD    100	cKt8e^P   140
51puR8AG>   HS20M-01M0-A/G/DXX	G}`Hu_ [\)   1.0 MPa	R-5e9vyS   60	'.zr:l   100	Gx-tPW}   140
KCfcEz   HS20M-03M0-A/G/XX	I z)~h>-F   3.0 MPa	&Fl* ,   60	T0BM:ofx   100	/pz(s+4=   140
HNV"'p;   HS20M-10M0-A/GXX	+w+qTZyky   10.0 MPa	Jek)`D   200	MU~nvs;:   250	xJ)vfo   300
-;U3$[T,J7   HS20M-20M0-A08	,8@U-7f,   20.0 MPa	?N@p~ *x   60	6n'XRfQp)&   100	H_7X%TvXb   140
~[ x}   HS20M-40M0-A08	xkkW?[&   40.0 MPa	a\v@^4    60	i)+2?<]   100	l}mzCIw%   140
Z#|IMmT;*=   Harsh Environmental Line, Piezoresistivechips for pressure measurements of 2 bar to 16 bar
{1]Of'x'   HE11C-200K-AXX	ch]Q%M   200 kPa	]73BJ   60	3gY4h*|`<   100	GA@Zfcg   140	ahm@ +/2   mV@5V
m_r_4BP   HE11C-400K-AXX	%-~T;_.   400 kPa	}_o!fV   60	P6o-H$ a+   100	V7i1BR8 G   140
Y7 `i~K;   HE11C-800K-AXX	j%O nLTZ   800 kPa	^DS+O>   60	=H2.1 :'   100	pZe:U;bb   140
6z80Y*|eJ   HE11C-01M6-AXX	7nL3+Pq   1.6 MPa	_rf   60	8k`rj;   100	j{u!/FD   140

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