新势力光电供应压力传感器芯片

新势力光电供应压力传感器芯片，采用高级电阻传感技术（STARe, Sensor Technology for AdvancedResistors），特点：稳定性高、适用于恶劣环境，该系列压力传感器芯片应用：腐蚀性、流动性、油性环境下的高精密压力传感测量，包括：汽车制造、工业、医疗、大型家电。 cF*TotU_m  
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$yP*jO4i   Type	xl{=Y< ;   Pressure	EZgwF=lO   Min	#-rH1h3*q   Typ	<(#(hDwy   Max	qyb?49I   Unit
'JtBZFq   The Pressure sensor chips are based onthe STARe (Sensor Technology for Advanced Resistors)
#Bze ,?@   Standard Line STARe, Piezoresistive chipsfor pressure measurements of 1 to 30 bar
3F"lXguS   SL21K-100k-A/GXX	e v}S+!|U   100 kPa	'B$ yo]   40	|*Yr<zt   70	6dQ-HI*Y#   130	7jrt7[{   mV@5V
l03B=$   SL21K-250k-A/GXX	85= )lu   250 kPa	|o"?gB}Dh   60	VO5# Qgen   100	F-QzrquS   140
xh-o}8*n"   SL21K-500k-A/GXX	,O5NLg-   500 kPa	t hh.A   60	;7*[Bcj.   100	t3WiomNCc   140
F~ty!(c   SL21K-01M0-A/GXX	U)TUOwF   1.0 MPa	E,Z$pKL?   60	1NFsb-<u   100	j8i[ONq^   140
t|?ez4/{z   SL21K-03M0-A/GXX	*][`@@->   3.0 MPa	yZ7&b&2nLn   60	1dY}\Sp   100	9yu\ Ot   140
-:^U_FL8un   Industrial Line STARe, Piezoresistivechips for pressure measurements of 100 mbar to 400 bar
Sz $~P9   IL20L-10k0-GXX	o)|flI'vT   10 kPa	W-f=]eWg   30	f^ZRT@`O   60	,]C;sN%~}   120	C.:<-xo   mV@5V
2ACCh4(/P   IL20L-35k0-A/GXX	;<Sd~M4f   35 kPa	!.$I["/=   40	m,28u3@r   100	1#g2A0U,   160
t?X877z   IL20M-03M0-A/GXX	QhFVxCA   3.0 MPa	h8j.(   60	3Aip}<1   100	0JS?;fk   140
@ y.?:7I   IL20M-100k-A/GXX	hNiE\x   100 kPa	234p9A@   60	~D+bh~   100	FZQP%]FX   140
iXkF1r]i   IL20M-250k-A/GXX	S\EyCi+   250 kPa	GAzU?a{S   60	^0)g/`H^>   100	)}R0Y=e   140
%`r$g[<G   IL20M-500k-A/GXX	%Xd[(Q)   500 kPa	Y Uc+0   60	JG.y,<xW   100	S}3fr^{.   140
9=M$AB   IL20M-01M0-A/GXX	g/_5unI}u   1.0 MPa	]%SH>   60	m 0C@G5   100	hag$GX'2k   140
@7c?xQVd$   IL20M-10M0-A/GXX	6wRd<]C   10.0 MPa	l4YbKnp]   200	N% B>M7-=   250	Es`Px_k   300
&B;~   IL20M-40M0-AXX	wm@@$   40.0 MPa	G>=*yqo   230	?<,l3pwqa   290	**0~K";\   350
Wi<m{.%\E   High Stability Line STARe, Piezoresistivechips for pressure measurements of 60 mbar to 400 bar
iMh#TUlQEQ   HS20V-06k0-A/G/D05	9RL`<,Q   6 kPa	Jr4Ky<G_i   60	P;no?   100	a!SiX   140	XJB)rP   mV@5V
dQX6(Jj   HS20V-10k0-A/G/D05	klYX7?   10 kPa	2'Uu:Y^   60	U>SShpmZA   100	T<>,lQs(a   140
z6P$pqyF   HS20L-35k0-A/G/DXX	y<3-?}.aZ   35 kPa	=%O6:YM    60	m7V/zn e   100	aO[w/cG Q   140
DfD&)tsMQ   HS20L-100k-A/G/DXX	!|uWH   100 kPa	G4;Oi=   60	6_;icpN]   100	4"ZP 'I;   140
S13nL^=i   HS20M-250k-A/G/DXX	/}Axf"OE   250 kPa	VQ@   60	pllGB6X   100	Yh7t"=o   140
?j.,Nw4FC   HS20M-500k-A/G/DXX	-i|}m++   500 kPa	q<<v,ihh   60	e`s ~.ZF   100	8Fh)eha9f   140
>y>5#[M!   HS20M-01M0-A/G/DXX	.Hm>i   1.0 MPa	Jpq~   60	y^*~B(T{   100	6@!`]tSCK   140
^76]0`gS   HS20M-03M0-A/G/XX	8,%^ M9zBP   3.0 MPa	V0YZp   60	B[Scr5|   100	~~P5k:   140
[|L<_.8   HS20M-10M0-A/GXX	l'qg8   10.0 MPa	gD?l-RT>   200	Ml5w01O   250	u=sp`%?   300
j$:~Rek   HS20M-20M0-A08	JbbzV>   20.0 MPa	$%Kfq[Q   60	33q}CzK   100	e*C(q~PQ   140
#!# l45p6   HS20M-40M0-A08	*fxG?}YT   40.0 MPa	ioCsV    60	I236RIq   100	Y.UFbrv   140
zw[m9N5\h   Harsh Environmental Line, Piezoresistivechips for pressure measurements of 2 bar to 16 bar
Avc%2+   HE11C-200K-AXX	kzLsoZ!I   200 kPa	ND;#7/$>   60	t:Q*gWRh   100	4$<JHo @.   140	LRA8p<Rs   mV@5V
+6\Zj)   HE11C-400K-AXX	"8MF_Gu):   400 kPa	\8cx6 G'   60	AkV#J, 3LC   100	vE ?G7%,   140
D>q9 3;p   HE11C-800K-AXX	6{b>p+U   800 kPa	n>YKa)|W`   60	`^&OF uee   100	}Y\%RA   140
tsjrRMR   HE11C-01M6-AXX	Yq KCeg   1.6 MPa	;_(4Q*Yx   60	_DtV   100	wHy!CP%   140

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