新势力光电供应压力传感器芯片

新势力光电供应压力传感器芯片，采用高级电阻传感技术（STARe, Sensor Technology for AdvancedResistors），特点：稳定性高、适用于恶劣环境，该系列压力传感器芯片应用：腐蚀性、流动性、油性环境下的高精密压力传感测量，包括：汽车制造、工业、医疗、大型家电。 ?v2_7x&  
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!nBbt?*   Type	ReaZg ?:h   Pressure	UsE\p9mCuV   Min	(p{X .X+   Typ	(?qCtLZ   Max	zj`c%9N+   Unit
2/?Zp=|j\   The Pressure sensor chips are based onthe STARe (Sensor Technology for Advanced Resistors)
iuV4xyp   Standard Line STARe, Piezoresistive chipsfor pressure measurements of 1 to 30 bar
' @!&{N   SL21K-100k-A/GXX	4:V +>Jt   100 kPa	)PN8HJAArh   40	.}dLqw   70	uX7L1~s-   130	ufL,Kq4   mV@5V
ioi/`iQR   SL21K-250k-A/GXX	| R,dsBd   250 kPa	c&D+=    60	D^r g-E[L   100	:DH@zR   140
HYl+xH'.j   SL21K-500k-A/GXX	ZcA"HD%   500 kPa	amsl>wc!   60	nDkG}JkB!   100	m-{DhJV   140
h%j4(v}r{C   SL21K-01M0-A/GXX	M>k&WtqK   1.0 MPa	lg|6~=aQ   60	Dk\%,[4(   100	LsR<r1KDJ   140
UB@(r86d   SL21K-03M0-A/GXX	3n2^;b/]   3.0 MPa	9^Xndo]y   60	L'y0$   100	n l5+#e*\   140
R/{h4/+vJ   Industrial Line STARe, Piezoresistivechips for pressure measurements of 100 mbar to 400 bar
I85wP}c(   IL20L-10k0-GXX	pll5m7[   10 kPa	-Ua5anzB   30	6?"Gj}|r   60	`y'%dY}$n   120	0yjYjIk"T   mV@5V
['(qeS@5O   IL20L-35k0-A/GXX	e,XT(KY   35 kPa	@kd$.7Y9   40	""`z3-   100	Xk:x=4u&   160
V xN!Ki=   IL20M-03M0-A/GXX	:Nz TEK   3.0 MPa	)~)T[S   60	i{g~u<DH)Q   100	)m-(-I   140
8U#14U5rS   IL20M-100k-A/GXX	1%@i4   100 kPa	"<oR.f=0   60	o &b\bK%E   100	z'Bvjul   140
h\C1:0x{   IL20M-250k-A/GXX	J^kSp   250 kPa	!ggHLZRlz   60	JpQV7}$   100	RG1#\d-fE   140
T5[(vTp   IL20M-500k-A/GXX	jJ>I*'w   500 kPa	AfW:'>2   60	%)}_OXWf:   100	f]+. i-c=   140
q!d7Ms{q   IL20M-01M0-A/GXX	m 7,"M~\pX   1.0 MPa	ipiS=   60	5IG#-Q(6sp   100	J@Nq   140
;S2/n$Ju_   IL20M-10M0-A/GXX	n%dh|j2u   10.0 MPa	G*VcAJ[   200	?cr^.LV|h^   250	4m9]d)   300
h*NBSvn   IL20M-40M0-AXX	F-?s8RD   40.0 MPa	orF8%   230	9H%L;C5<   290	~EhM"go   350
-[lOf   High Stability Line STARe, Piezoresistivechips for pressure measurements of 60 mbar to 400 bar
1`&"U[{   HS20V-06k0-A/G/D05	pu+jw<7   6 kPa	>x1?t   60	X04JQLhy"   100	>]8H@. \   140	jTz~ V&^   mV@5V
xcl8q:   HS20V-10k0-A/G/D05	}W* q   10 kPa	|rk4, NG.   60	$>PV6   100	ER$qL"H U   140
xrl!$xE GX   HS20L-35k0-A/G/DXX	t2q{;d~.   35 kPa	_ye74$#   60	3,-xk!W$L   100	b$1W>   140
.~dNzonq   HS20L-100k-A/G/DXX	e47N9&4   100 kPa	<2{-ey]   60	>hmBV7nR   100	-mK;f$X   140
wLz@u$u?   HS20M-250k-A/G/DXX	:NPnwX8w   250 kPa	}&O}t{gS*   60	K_sHZ   100	<^8&2wAkJ   140
a"&Gs/QKSC   HS20M-500k-A/G/DXX	iSg^np   500 kPa	e${Cf   60	ii:E>O(0B   100	 U}2b{   140
SV0h'd(b   HS20M-01M0-A/G/DXX	2Ub!wee   1.0 MPa	eQqx0+-0c   60	Q&A^(z}   100	;Wu6f"+Y#   140
E\Et,l#|LY   HS20M-03M0-A/G/XX	\=NS@_t,   3.0 MPa	Ri mz~}+   60	$)6%LG_@   100	.Do(iYO.L   140
2j <Y>Y   HS20M-10M0-A/GXX	o1zKns?   10.0 MPa	|)}&:xA%   200	E6zSMl5b   250	Z&W*@(dX   300
rZSD)I   HS20M-20M0-A08	N0_@=uE   20.0 MPa	}@H(z   60	t#BQB<GI   100	O; #qG/b1   140
0M u6R=s   HS20M-40M0-A08	/c:78@   40.0 MPa	NwbX]pDT   60	L }L"BY3$   100	k(23Zt]   140
Lsb`,:   Harsh Environmental Line, Piezoresistivechips for pressure measurements of 2 bar to 16 bar
)N'rYS'9   HE11C-200K-AXX	 dp DPSI   200 kPa	p%ZOLoc)Y   60	\;bDDTM   100	5|_El/G   140	GA+#'R   mV@5V
]b'"l   HE11C-400K-AXX	m[8?d~   400 kPa	|$+ xVi8   60	q:ah%x[   100	>\4"k4d}   140
ZBsV   HE11C-800K-AXX	|kK_B :K   800 kPa	!&# 5*   60	!>,XK!)   100	7;r Jr&.)   140
w tSX(LNY   HE11C-01M6-AXX	Aw"Y_S8.   1.6 MPa	NnTAKd 8   60	khe.+Qfgj   100	MN<uIqG   140

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