新势力光电供应压力传感器芯片

新势力光电供应压力传感器芯片，采用高级电阻传感技术（STARe, Sensor Technology for AdvancedResistors），特点：稳定性高、适用于恶劣环境，该系列压力传感器芯片应用：腐蚀性、流动性、油性环境下的高精密压力传感测量，包括：汽车制造、工业、医疗、大型家电。 M(n@ytz  
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,;f5OUl?[   Type	)4>7X)j>   Pressure	5=8t<v1Bn   Min	8isQL   Typ	R*2F)e\|   Max	[2!C^\t   Unit
69`*u<{PC   The Pressure sensor chips are based onthe STARe (Sensor Technology for Advanced Resistors)
yJ;Qe_up   Standard Line STARe, Piezoresistive chipsfor pressure measurements of 1 to 30 bar
&=XK:+   SL21K-100k-A/GXX	tYhcoV   100 kPa	Pc<0kQg   40	Mq_P'/   70	T`9nY!   130	n cTMcu   mV@5V
`Jh<8~1   SL21K-250k-A/GXX	)JJF}m=   250 kPa	<(H<*Xf9   60	<~S]jtL.j:   100	hE<Sm*HU   140
E()%IC/R   SL21K-500k-A/GXX	}$ Kd-cj+   500 kPa	E'NS$,h   60	\[]?9Z=n   100	ce; zn\   140
0& ?L%Y   SL21K-01M0-A/GXX	#T@k(Bz{L   1.0 MPa	+r&:c[   60	NK'@.=$   100	ZT8LMPC   140
;lfv.-u:<   SL21K-03M0-A/GXX	Nr).*]g@~   3.0 MPa	LF#[$ so{i   60	d8U<V<H<   100	5"X@<;H%   140
h@o6=d=4   Industrial Line STARe, Piezoresistivechips for pressure measurements of 100 mbar to 400 bar
7p1B"%   IL20L-10k0-GXX	^AiQNL}   10 kPa	&I%E8E   30	_dmG#_1   60	5:C>:pAV   120	FZIC|uz   mV@5V
i0zrXaKV   IL20L-35k0-A/GXX	xW2?\em   35 kPa	R1eWPtWs   40	*2rc Y   100	X(\L1N   160
WW2hwB(   IL20M-03M0-A/GXX	CGkx_E]   3.0 MPa	/Z,hQ>/   60	S_ UAz   100	uPjp5;V   140
7B\Q5fLQ   IL20M-100k-A/GXX	;tF&r1   100 kPa	pjs4FZ`Pd;   60	!IA\c(c^   100	4nGt*0Er   140
/+8VW;4|I   IL20M-250k-A/GXX	"a3?m)   250 kPa	l(}MM|ka   60	pLys%1hg   100	WtaOf _   140
WW>m`RU`   IL20M-500k-A/GXX	~"<^4h   500 kPa	%QEyvl4   60	M&<qGV$A   100	x 4sIZe+   140
_zi| GD   IL20M-01M0-A/GXX	&U7h9o H   1.0 MPa	sriDta?Cz   60	FSAX,Y   100	WiZTE(NM`   140
u6Wan*I?   IL20M-10M0-A/GXX	[HUK 9hG   10.0 MPa	IV1Y+Z )   200	%5DM ew   250	cza_LO(   300
72.Msnn   IL20M-40M0-AXX	{?2|rv)   40.0 MPa	A*A/30o|R   230	';c 6   290	+8x_f0<   350
'$EyVu !   High Stability Line STARe, Piezoresistivechips for pressure measurements of 60 mbar to 400 bar
6}!1a?X   HS20V-06k0-A/G/D05	 S~E@A.7   6 kPa	E^br-{|{   60	41s\^'^&   100	9 wbQ$>G9   140	KfYU.Q   mV@5V
V*5v JF0j   HS20V-10k0-A/G/D05	)fxn bBz{   10 kPa	N O@`*:.^Y   60	R5%CK_   100	sR[!6[AA   140
a]xGzv5   HS20L-35k0-A/G/DXX	u@`a~   35 kPa	h]+;"v6 /   60	5]upfC6   100	w6)Q5H53)   140
,UNk]vd   HS20L-100k-A/G/DXX	LExm#T`   100 kPa	Lo#G. s|   60	]8DTk!   100	32?'jRN(ue   140
$eG_LY 1v   HS20M-250k-A/G/DXX	H{,1-&>|   250 kPa	l|E4 7@#   60	D,[Nn_N   100	II|;_j   140
2f@Cy+W'[   HS20M-500k-A/G/DXX	8ih_S2Cd   500 kPa	w y#>Aq   60	79@CO6   100	S50}]5K   140
WZPj?ou`G   HS20M-01M0-A/G/DXX	T*PEUq   1.0 MPa	saQs<1   60	H.E=m0np   100	[ }Tb2|   140
\Cj3jg   HS20M-03M0-A/G/XX	.%e>>U>F   3.0 MPa	q5=,\S3=   60	}r,xx{.u7   100	OuEcoIK   140
9d-'%Q>+   HS20M-10M0-A/GXX	( $2M "n   10.0 MPa	w0oTV;yh   200	_ahp7-O   250	AWx@Z7\z"g   300
Xq03o#-p+   HS20M-20M0-A08	K:$mEB[c<   20.0 MPa	Skg/iH"(   60	V|kN 1 A   100	zIu/!aw   140
?%qaoxG37   HS20M-40M0-A08	IF5-@hag,   40.0 MPa	fRLA;1va   60	<N$Hb2b   100	!#W>x49}   140
9T5 F0?qd   Harsh Environmental Line, Piezoresistivechips for pressure measurements of 2 bar to 16 bar
^>Z_3{s:$   HE11C-200K-AXX	l&U$LN$*e   200 kPa	0m4M@94   60	{ +w.Z,D"   100	9RHDkK{5   140	M!Ao!D[   mV@5V
Ao}<a1f   HE11C-400K-AXX	#)xlBq4cZ   400 kPa	Ys}^hy   60	Y z&!0Hfd   100	r(uo-/7z   140
t,JX6ni   HE11C-800K-AXX	Xm>zT'B_tJ   800 kPa	43B0ynagN   60	gDLS)4^w   100	^@RvCJ+   140
6',Hs   HE11C-01M6-AXX	.!0Rh9yyl   1.6 MPa	jQ3dLctn   60	QY&c=bWAX"   100	*->*p35   140

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