《
半导体器件导论》(影印版)还尽量保持了原书的主要优点:(1)注重基本概念和方法。《半导体器件导论》(影印版)从内容的整体编排到具体章节的叙述,都体现了突出
物理概念、强调基本分析方法的指导思想。书中的数学推导和物理分析融为一体,得出的结论不仅对理解物理概念十分重要,而且经得起反复推敲。书中还采用了大量非常清晰的插图,帮助读者更好地理解基本概念。(2)可读性强,便于自学。全书脉络清楚,说理透彻,易于读者理解和掌握。每一章的开头都有引言,告诉读者可以从本章学到什么,应该掌握什么;每一章中都有例题和读者自测题;每一章的最后还有总结、复习提纲和大量
习题(其中包含一些采用计算机进行模拟计算的练习题)。通过举例和练习加深读者对基本概念的理解是《半导体器件导论》(影印版)突出的特点。
OQ hQ!6 《半导体器件导论》(影印版)是美国新墨西哥大学电机与计算机工程系Neamen教授所著的“SereicorlductorPhysics and Devices,3rd edition”一书的改进版本。
Or.u*!od& 与原书相比,《半导体器件导论》(影印版)更好地将固体晶格结构、量子力学入门知识、固体的量子理论以及半导体物理和半导体器件有机地结合在一起。利用《半导体器件导论》(影印版),学生只需要具有高等数学和大学普通物理的基础,用一个学期就可以系统地学习到半导体器件的基本理论,从而为进入微
电子学研究领域打下一个良好的基础。这一特点也是目前国内出版的同类教材很难达到的。
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BP@tI| e' o2PW Preface xvii
=yZq]g6Q CHAPTER 1
Bh2l3J4X The Crystal Structure of Solids
rhbz|Uq 1.0 Preview 1
iW(LD1~7 1.1 Semiconductor Materials 2
ah:["< z< 1.2 Types of Solids 3
kEnGr6e 1.3 Space Lattices 4
dEtjcId 1.3.1 Primitive and Unit Cell 4
H?];8wq$G 1.3.2 Basic Crystal Structures 6
jeWv~JA%L| 1.3.3 Crystal Planes and Miller Indices
(T#$0RFq 1.3.4 The Diamond Structure 13
Cjr]l! 1.4 Atomic Bonding 15
;,[0 bmL 1.5 Imperfections and Impurities in Solids 17
{WrEe7dLy 1.5.1 Imperfections in Solids 17
P M [_0b 1.5.2 Impurities in Solids 18
iVn4eLK^v 1.6 Growth of Semiconductor Materials 19
* )<+u~ 1.6.1 Growth from a Melt 20
5OI.Ka 1.6.2 Epitaxial Growth 22
/RJ 1.7 Device Fabrication Techniques:
e9{0hw7 Oxidation 23
1v]%FC` 1.8 Summary 25
}w$2,r
gA Problems 27
o@zxzZWg CHAPTER 2
9y*] {IY Theory of Solids 31
d j\Z}[ 2.0 Preview 31
FSA%,b;U 2.1 Principles of Quantum Mechanics 32
~Mn3ADIb= 2.1.1 Energy Quanta 32
AhN3~/u%7 2.1.2 Wave-Particle Duality Principle 34
RH;ulAD6(~ 2.2 Energy Quantization and Probability Concepts 36
4-.K<-T%D 2.2.1 Physical Meaning of the Wave Function 36
ML905n u 2.2.2 The One-Electron Atom 37
~r.R|f]IQ 2.2.3 Periodic Table 40
&|Duc} t 2.3 Energy-Band Theory 41
Jx.fDVJ 2.3.1 Formation of Energy Bands 41
!{.CGpS ] 2.3.2 The Energy Band and the Bond Model 45
Dm)B? H" 2.3.3 Charge Carriers——Electrons and Holes 47
P 0.cF]<m 2.3.4 Effective Mass 49
"TJu<O"2 2.3.5 Metals, Insulators, and Semiconductors 50
R7Y_ 7@p 2.3.6 The k-Space Diagram 52
v;<gCzqQh 2,4 Density of States Function 55
{oqbV#/& 2.5 Statistical Mechanics 57
M9W
zsWM 2.5.1 Statistical Laws 57
Y.Zd_,qy 2.5.2 The Fermi-Dirac Distribution Function
wu.l-VmGp) and the Fermi Energy 58
#-;W|ib%z 2.5.3 Maxwell-Boltzmann Approximation 62
6]?%1HSi 2.6 Summary 64
eT".psRiC Problems 65
GP%V(HhN CHAPTER 3
w1)TnGT The Semiconductor in Equilibrium 70
@vlP)" 3.0 Preview 70
4[$:KGh3 3.1 Charge Carriers in Semiconductors 71
;98&5X\u< 3.1.1 Equilibrium Distribution of Electrons and Holes 72
TF/NA\0c$ 3.1.2 The no and Po Equations 74
O% T?+1E 3.1.3 The Intrinsic Carrier Concentration 79
o%?)};o 3.1.4 The Intrinsic Fermi-Level Position 82
.kBkYK8*t 3.2 Dopant Atoms and Energy Levels 83
{1Ra|,; 3.2.1 Qualitative Description 83
GGuU(sL* 3.2.2 Ionization Energy 86
vdq=F|& 3.2.3 Group III-V Semiconductors 88
8${n}} 3.3 Carrier Distributions in the Extrinsic Semiconductor 89
=PRQ3/?5 3.3.1 Equilibrium Distribution of Electrons and Holes 89
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