《
半导体器件导论》(影印版)还尽量保持了原书的主要优点:(1)注重基本概念和方法。《半导体器件导论》(影印版)从内容的整体编排到具体章节的叙述,都体现了突出
物理概念、强调基本分析方法的指导思想。书中的数学推导和物理分析融为一体,得出的结论不仅对理解物理概念十分重要,而且经得起反复推敲。书中还采用了大量非常清晰的插图,帮助读者更好地理解基本概念。(2)可读性强,便于自学。全书脉络清楚,说理透彻,易于读者理解和掌握。每一章的开头都有引言,告诉读者可以从本章学到什么,应该掌握什么;每一章中都有例题和读者自测题;每一章的最后还有总结、复习提纲和大量
习题(其中包含一些采用计算机进行模拟计算的练习题)。通过举例和练习加深读者对基本概念的理解是《半导体器件导论》(影印版)突出的特点。
b/Y9fQn 《半导体器件导论》(影印版)是美国新墨西哥大学电机与计算机工程系Neamen教授所著的“SereicorlductorPhysics and Devices,3rd edition”一书的改进版本。
Y$b4Ga9j 与原书相比,《半导体器件导论》(影印版)更好地将固体晶格结构、量子力学入门知识、固体的量子理论以及半导体物理和半导体器件有机地结合在一起。利用《半导体器件导论》(影印版),学生只需要具有高等数学和大学普通物理的基础,用一个学期就可以系统地学习到半导体器件的基本理论,从而为进入微
电子学研究领域打下一个良好的基础。这一特点也是目前国内出版的同类教材很难达到的。
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vA@Kb3, T0s7aw[zm Preface xvii
s|rlpd4y CHAPTER 1
e`zEsLs@ The Crystal Structure of Solids
}1]/dCv 1.0 Preview 1
)QE7$|s 1.1 Semiconductor Materials 2
O=LS~&=, 1.2 Types of Solids 3
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wD 1.3 Space Lattices 4
0l3v>ty 1.3.1 Primitive and Unit Cell 4
\s?OvqI: 1.3.2 Basic Crystal Structures 6
: Q X~bq 1.3.3 Crystal Planes and Miller Indices
Nv "R'Pps 1.3.4 The Diamond Structure 13
ATCFdtNc 1.4 Atomic Bonding 15
@%&;V( 1.5 Imperfections and Impurities in Solids 17
";}Lf1M9 1.5.1 Imperfections in Solids 17
dl;~-'0 1.5.2 Impurities in Solids 18
F+PIZ% 1.6 Growth of Semiconductor Materials 19
(RG\U[ 1.6.1 Growth from a Melt 20
r \H+=2E' 1.6.2 Epitaxial Growth 22
qKt8sxg 1.7 Device Fabrication Techniques:
0}Rxe Oxidation 23
n={}=' 1.8 Summary 25
VTk6.5!8 Problems 27
H+vONg CHAPTER 2
9 tkj:8_ Theory of Solids 31
LSb3w/3M 2.0 Preview 31
=BQM(mal 2.1 Principles of Quantum Mechanics 32
_H}y7 2.1.1 Energy Quanta 32
T:o!H
Xdj^ 2.1.2 Wave-Particle Duality Principle 34
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hNX$t 2.2 Energy Quantization and Probability Concepts 36
H
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]#R'hL%f 2.2.2 The One-Electron Atom 37
'c5#M,G~ 2.2.3 Periodic Table 40
Ze~$by|9f 2.3 Energy-Band Theory 41
L,!?'.*/] 2.3.1 Formation of Energy Bands 41
-q' n p0H 2.3.2 The Energy Band and the Bond Model 45
UfjLNe}wA 2.3.3 Charge Carriers——Electrons and Holes 47
NCYN .@J 2.3.4 Effective Mass 49
yLCqlK 2.3.5 Metals, Insulators, and Semiconductors 50
2A|^6#XN' 2.3.6 The k-Space Diagram 52
#Z<pks2
y 2,4 Density of States Function 55
\DBoe:0~ 2.5 Statistical Mechanics 57
{dvrj<? 2.5.1 Statistical Laws 57
^;+lsEW 2.5.2 The Fermi-Dirac Distribution Function
~K% ]9
and the Fermi Energy 58
XRXKO>4q 2.5.3 Maxwell-Boltzmann Approximation 62
=o\:@I[ 2.6 Summary 64
!3U1HS-i62 Problems 65
i@e.Uzn CHAPTER 3
Oh6_Bci The Semiconductor in Equilibrium 70
-v?,{?$0 3.0 Preview 70
u /!U/| 3.1 Charge Carriers in Semiconductors 71
S!.aBAW 3.1.1 Equilibrium Distribution of Electrons and Holes 72
nN>D=a"&F 3.1.2 The no and Po Equations 74
$_ub.g| 3.1.3 The Intrinsic Carrier Concentration 79
z"o;|T: 3.1.4 The Intrinsic Fermi-Level Position 82
|57KTiiNLI 3.2 Dopant Atoms and Energy Levels 83
:|`'\%zW- 3.2.1 Qualitative Description 83
[W=%L:Ea 3.2.2 Ionization Energy 86
wpu]{~Y 3.2.3 Group III-V Semiconductors 88
&b,.W;+ 3.3 Carrier Distributions in the Extrinsic Semiconductor 89
lMAmico 3.3.1 Equilibrium Distribution of Electrons and Holes 89
ka{9{/dz3 ……
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