《
半导体器件导论》(影印版)还尽量保持了原书的主要优点:(1)注重基本概念和方法。《半导体器件导论》(影印版)从内容的整体编排到具体章节的叙述,都体现了突出
物理概念、强调基本分析方法的指导思想。书中的数学推导和物理分析融为一体,得出的结论不仅对理解物理概念十分重要,而且经得起反复推敲。书中还采用了大量非常清晰的插图,帮助读者更好地理解基本概念。(2)可读性强,便于自学。全书脉络清楚,说理透彻,易于读者理解和掌握。每一章的开头都有引言,告诉读者可以从本章学到什么,应该掌握什么;每一章中都有例题和读者自测题;每一章的最后还有总结、复习提纲和大量
习题(其中包含一些采用计算机进行模拟计算的练习题)。通过举例和练习加深读者对基本概念的理解是《半导体器件导论》(影印版)突出的特点。
/Lj%A 《半导体器件导论》(影印版)是美国新墨西哥大学电机与计算机工程系Neamen教授所著的“SereicorlductorPhysics and Devices,3rd edition”一书的改进版本。
9j9YQ2 与原书相比,《半导体器件导论》(影印版)更好地将固体晶格结构、量子力学入门知识、固体的量子理论以及半导体物理和半导体器件有机地结合在一起。利用《半导体器件导论》(影印版),学生只需要具有高等数学和大学普通物理的基础,用一个学期就可以系统地学习到半导体器件的基本理论,从而为进入微
电子学研究领域打下一个良好的基础。这一特点也是目前国内出版的同类教材很难达到的。
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7O]J^H+7 wbn^R' Preface xvii
ZE{aS4c CHAPTER 1
ccIDMJ=2 The Crystal Structure of Solids
`4se7{'UK` 1.0 Preview 1
eUi> Mp 1.1 Semiconductor Materials 2
NU BpIx& 1.2 Types of Solids 3
z&\Il#'\m+ 1.3 Space Lattices 4
nYo&x' 1.3.1 Primitive and Unit Cell 4
xn0s`I[ 1.3.2 Basic Crystal Structures 6
!k4 }v'= 1.3.3 Crystal Planes and Miller Indices
(K!M*d+ 1.3.4 The Diamond Structure 13
n U+pnkMj 1.4 Atomic Bonding 15
yIn/Y 0No 1.5 Imperfections and Impurities in Solids 17
&Xj {:s# 1.5.1 Imperfections in Solids 17
oUnq"] 1.5.2 Impurities in Solids 18
kq-mr 1.6 Growth of Semiconductor Materials 19
ee4KMS 1.6.1 Growth from a Melt 20
@2)t#~Wc4h 1.6.2 Epitaxial Growth 22
_Ac/i r[,: 1.7 Device Fabrication Techniques:
ubiQ8Bx Oxidation 23
zZS>+O 1.8 Summary 25
FF5tPHB Problems 27
UwvGr h CHAPTER 2
<L[T'ZE+ Theory of Solids 31
|_xZ/DT 2.0 Preview 31
Gsx^j? 2.1 Principles of Quantum Mechanics 32
.aVHd<M 2.1.1 Energy Quanta 32
fU\k?'x_ 2.1.2 Wave-Particle Duality Principle 34
d m/-} 2.2 Energy Quantization and Probability Concepts 36
(,d4"C 2.2.1 Physical Meaning of the Wave Function 36
3:l: ~Vn 2.2.2 The One-Electron Atom 37
cKvAR5| 2.2.3 Periodic Table 40
B]+7 JB 2.3 Energy-Band Theory 41
[u!p- 2.3.1 Formation of Energy Bands 41
]j%*"V 2.3.2 The Energy Band and the Bond Model 45
A52LH, 2.3.3 Charge Carriers——Electrons and Holes 47
9&|12x$ 2.3.4 Effective Mass 49
[qO5~E`; 2.3.5 Metals, Insulators, and Semiconductors 50
AQJ|^'% 2.3.6 The k-Space Diagram 52
^=4I|+P,6. 2,4 Density of States Function 55
yoq\9* ?u^ 2.5 Statistical Mechanics 57
u&?yPR 2.5.1 Statistical Laws 57
!;xf>API 2.5.2 The Fermi-Dirac Distribution Function
s=
-WB0E and the Fermi Energy 58
LLXg 2.5.3 Maxwell-Boltzmann Approximation 62
[="g|/M) 2.6 Summary 64
op.PS{_t Problems 65
yH0yO*RZ CHAPTER 3
wI1M0@}PV The Semiconductor in Equilibrium 70
n',9#I(!L 3.0 Preview 70
T2/v} 3.1 Charge Carriers in Semiconductors 71
!>a&`j2:W 3.1.1 Equilibrium Distribution of Electrons and Holes 72
i4{ / 3.1.2 The no and Po Equations 74
&"~,V6,q 3.1.3 The Intrinsic Carrier Concentration 79
=DmPPl{ 3.1.4 The Intrinsic Fermi-Level Position 82
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x2B 3.2 Dopant Atoms and Energy Levels 83
EA%#/n 3.2.1 Qualitative Description 83
6I5[^fv45G 3.2.2 Ionization Energy 86
JWUv H 3.2.3 Group III-V Semiconductors 88
&kr_CP:; 3.3 Carrier Distributions in the Extrinsic Semiconductor 89
[7SI<xkv 3.3.1 Equilibrium Distribution of Electrons and Holes 89
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