《
半导体器件导论》(影印版)还尽量保持了原书的主要优点:(1)注重基本概念和方法。《半导体器件导论》(影印版)从内容的整体编排到具体章节的叙述,都体现了突出
物理概念、强调基本分析方法的指导思想。书中的数学推导和物理分析融为一体,得出的结论不仅对理解物理概念十分重要,而且经得起反复推敲。书中还采用了大量非常清晰的插图,帮助读者更好地理解基本概念。(2)可读性强,便于自学。全书脉络清楚,说理透彻,易于读者理解和掌握。每一章的开头都有引言,告诉读者可以从本章学到什么,应该掌握什么;每一章中都有例题和读者自测题;每一章的最后还有总结、复习提纲和大量
习题(其中包含一些采用计算机进行模拟计算的练习题)。通过举例和练习加深读者对基本概念的理解是《半导体器件导论》(影印版)突出的特点。
)1BiEK`v 《半导体器件导论》(影印版)是美国新墨西哥大学电机与计算机工程系Neamen教授所著的“SereicorlductorPhysics and Devices,3rd edition”一书的改进版本。
hC|KH}aCR) 与原书相比,《半导体器件导论》(影印版)更好地将固体晶格结构、量子力学入门知识、固体的量子理论以及半导体物理和半导体器件有机地结合在一起。利用《半导体器件导论》(影印版),学生只需要具有高等数学和大学普通物理的基础,用一个学期就可以系统地学习到半导体器件的基本理论,从而为进入微
电子学研究领域打下一个良好的基础。这一特点也是目前国内出版的同类教材很难达到的。
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1O- E], sMN>wbHwh[ Preface xvii
Y"s
)u7 CHAPTER 1
&:C{/QnA The Crystal Structure of Solids
B[Ix?V4yy 1.0 Preview 1
M@5KoMsB9 1.1 Semiconductor Materials 2
Yo@m50s$ 1.2 Types of Solids 3
3[iSF5%V*p 1.3 Space Lattices 4
)fy<P;g 1.3.1 Primitive and Unit Cell 4
Y+OYoI 1.3.2 Basic Crystal Structures 6
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}{ 1.3.3 Crystal Planes and Miller Indices
a$laRtId7 1.3.4 The Diamond Structure 13
e%'z=%( 1.4 Atomic Bonding 15
$]Rl__; 1.5 Imperfections and Impurities in Solids 17
L;4[ k;5 1.5.1 Imperfections in Solids 17
tu7+LwF7 1.5.2 Impurities in Solids 18
?L8&(&1@VD 1.6 Growth of Semiconductor Materials 19
$:PF9pY( 1.6.1 Growth from a Melt 20
A4}JZi6@ 1.6.2 Epitaxial Growth 22
DXt]b, 1.7 Device Fabrication Techniques:
Rd .U;> Oxidation 23
D l4d'&! 1.8 Summary 25
3^j~~"2,w Problems 27
8H&_, ; CHAPTER 2
]VzqQ=U% Theory of Solids 31
,^n-L& 2.0 Preview 31
g"TPII$ 2.1 Principles of Quantum Mechanics 32
`WP@ZSC6 2.1.1 Energy Quanta 32
%_]=i@Y~ 2.1.2 Wave-Particle Duality Principle 34
g?w2J6Z.`J 2.2 Energy Quantization and Probability Concepts 36
#>MO] 2.2.1 Physical Meaning of the Wave Function 36
iLjuE)6-$ 2.2.2 The One-Electron Atom 37
RI#lI~&) 2.2.3 Periodic Table 40
7W6eiUI' 2.3 Energy-Band Theory 41
DxE^#=7iH; 2.3.1 Formation of Energy Bands 41
)[e%wPu4e 2.3.2 The Energy Band and the Bond Model 45
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NT 2.3.3 Charge Carriers——Electrons and Holes 47
E_ o{c5N 2.3.4 Effective Mass 49
jc${.?m 2.3.5 Metals, Insulators, and Semiconductors 50
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2.3.6 The k-Space Diagram 52
N |OMj %Uk 2,4 Density of States Function 55
~ >&I^4 2.5 Statistical Mechanics 57
({D}QEP 2.5.1 Statistical Laws 57
iSSc5ek4 2.5.2 The Fermi-Dirac Distribution Function
.Z(S4wV and the Fermi Energy 58
{m?K2]]( 2.5.3 Maxwell-Boltzmann Approximation 62
I}6DoLbV 2.6 Summary 64
Bf D,z Problems 65
/}h71V! CHAPTER 3
NqQM!B] The Semiconductor in Equilibrium 70
2N8rM}?90 3.0 Preview 70
c n\k`8 3.1 Charge Carriers in Semiconductors 71
x.0k%H 3.1.1 Equilibrium Distribution of Electrons and Holes 72
%igFHh? 3.1.2 The no and Po Equations 74
N/`TrWVF 3.1.3 The Intrinsic Carrier Concentration 79
Q0
uP8I}n 3.1.4 The Intrinsic Fermi-Level Position 82
TnbGO; 3.2 Dopant Atoms and Energy Levels 83
H<rnJ 3.2.1 Qualitative Description 83
o(Ua",| 3.2.2 Ionization Energy 86
-13P 2<i+ 3.2.3 Group III-V Semiconductors 88
+cPE4(d 3.3 Carrier Distributions in the Extrinsic Semiconductor 89
}}4sh5z 3.3.1 Equilibrium Distribution of Electrons and Holes 89
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