《
半导体器件导论》(影印版)还尽量保持了原书的主要优点:(1)注重基本概念和方法。《半导体器件导论》(影印版)从内容的整体编排到具体章节的叙述,都体现了突出
物理概念、强调基本分析方法的指导思想。书中的数学推导和物理分析融为一体,得出的结论不仅对理解物理概念十分重要,而且经得起反复推敲。书中还采用了大量非常清晰的插图,帮助读者更好地理解基本概念。(2)可读性强,便于自学。全书脉络清楚,说理透彻,易于读者理解和掌握。每一章的开头都有引言,告诉读者可以从本章学到什么,应该掌握什么;每一章中都有例题和读者自测题;每一章的最后还有总结、复习提纲和大量
习题(其中包含一些采用计算机进行模拟计算的练习题)。通过举例和练习加深读者对基本概念的理解是《半导体器件导论》(影印版)突出的特点。
Ol }5ry 《半导体器件导论》(影印版)是美国新墨西哥大学电机与计算机工程系Neamen教授所著的“SereicorlductorPhysics and Devices,3rd edition”一书的改进版本。
|})s 0TU 与原书相比,《半导体器件导论》(影印版)更好地将固体晶格结构、量子力学入门知识、固体的量子理论以及半导体物理和半导体器件有机地结合在一起。利用《半导体器件导论》(影印版),学生只需要具有高等数学和大学普通物理的基础,用一个学期就可以系统地学习到半导体器件的基本理论,从而为进入微
电子学研究领域打下一个良好的基础。这一特点也是目前国内出版的同类教材很难达到的。
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gS+X% kBR=a%kG Preface xvii
$?PI>9g! CHAPTER 1
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"V) The Crystal Structure of Solids
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Z 1.0 Preview 1
#AGO~#aK 1.1 Semiconductor Materials 2
crIF5^3Yby 1.2 Types of Solids 3
as:l1S 1.3 Space Lattices 4
_s^tL2Pc 1.3.1 Primitive and Unit Cell 4
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qh 1.3.2 Basic Crystal Structures 6
)4ek!G]Rb 1.3.3 Crystal Planes and Miller Indices
&gXL{cK'% 1.3.4 The Diamond Structure 13
1 7~Pc 1.4 Atomic Bonding 15
Z?o0Q\}1 1.5 Imperfections and Impurities in Solids 17
Qf=^CQ=lV 1.5.1 Imperfections in Solids 17
yQrgOdo,w 1.5.2 Impurities in Solids 18
Z2]0brV 1.6 Growth of Semiconductor Materials 19
FFw(`[A_ 1.6.1 Growth from a Melt 20
.:j{d}p} 1.6.2 Epitaxial Growth 22
XS&Pc 1.7 Device Fabrication Techniques:
8UjIC4' Oxidation 23
w PR Ns9^ 1.8 Summary 25
\XB,)XDB Problems 27
A5Jadz~ CHAPTER 2
Y5GN7. Theory of Solids 31
}'P|A 2.0 Preview 31
^s6~*n<fH 2.1 Principles of Quantum Mechanics 32
lu{
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:5~Dca_iU4 2.1.2 Wave-Particle Duality Principle 34
{ }/ 2.2 Energy Quantization and Probability Concepts 36
)jL@GW 2.2.1 Physical Meaning of the Wave Function 36
g4WmUV#wp 2.2.2 The One-Electron Atom 37
aftt^h 2.2.3 Periodic Table 40
,5c7jZ5H 2.3 Energy-Band Theory 41
SdlO]y9E 2.3.1 Formation of Energy Bands 41
yT/rH- j;5 2.3.2 The Energy Band and the Bond Model 45
EcHZmf 2.3.3 Charge Carriers——Electrons and Holes 47
rd->@s|4mT 2.3.4 Effective Mass 49
KJT N"hF 2.3.5 Metals, Insulators, and Semiconductors 50
M]5l-i$ 2.3.6 The k-Space Diagram 52
(>0`e8v! 2,4 Density of States Function 55
wetu.aMp 2.5 Statistical Mechanics 57
7RUztu\_ 2.5.1 Statistical Laws 57
oqwW 2.5.2 The Fermi-Dirac Distribution Function
U[pHT _U and the Fermi Energy 58
GcRH$,<XG 2.5.3 Maxwell-Boltzmann Approximation 62
WDY\Fj 2.6 Summary 64
Bdh*[S\u@E Problems 65
6E) T;R(@ CHAPTER 3
_]*[TGap The Semiconductor in Equilibrium 70
%t&Lq }e 3.0 Preview 70
`S((F|Ty=; 3.1 Charge Carriers in Semiconductors 71
9q?knMt 3.1.1 Equilibrium Distribution of Electrons and Holes 72
qOG@MR(5 3.1.2 The no and Po Equations 74
AIOGa<^ 3.1.3 The Intrinsic Carrier Concentration 79
|iJz[% 3.1.4 The Intrinsic Fermi-Level Position 82
RgoF4g+@ 3.2 Dopant Atoms and Energy Levels 83
i}LQ}35@ 3.2.1 Qualitative Description 83
<T7@,_T 3.2.2 Ionization Energy 86
h:Gs9]Lvtv 3.2.3 Group III-V Semiconductors 88
',hoe 3.3 Carrier Distributions in the Extrinsic Semiconductor 89
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