《
半导体器件导论》(影印版)还尽量保持了原书的主要优点:(1)注重基本概念和方法。《半导体器件导论》(影印版)从内容的整体编排到具体章节的叙述,都体现了突出
物理概念、强调基本分析方法的指导思想。书中的数学推导和物理分析融为一体,得出的结论不仅对理解物理概念十分重要,而且经得起反复推敲。书中还采用了大量非常清晰的插图,帮助读者更好地理解基本概念。(2)可读性强,便于自学。全书脉络清楚,说理透彻,易于读者理解和掌握。每一章的开头都有引言,告诉读者可以从本章学到什么,应该掌握什么;每一章中都有例题和读者自测题;每一章的最后还有总结、复习提纲和大量
习题(其中包含一些采用计算机进行模拟计算的练习题)。通过举例和练习加深读者对基本概念的理解是《半导体器件导论》(影印版)突出的特点。
tZY6{,K%4 《半导体器件导论》(影印版)是美国新墨西哥大学电机与计算机工程系Neamen教授所著的“SereicorlductorPhysics and Devices,3rd edition”一书的改进版本。
v"l8[:: 与原书相比,《半导体器件导论》(影印版)更好地将固体晶格结构、量子力学入门知识、固体的量子理论以及半导体物理和半导体器件有机地结合在一起。利用《半导体器件导论》(影印版),学生只需要具有高等数学和大学普通物理的基础,用一个学期就可以系统地学习到半导体器件的基本理论,从而为进入微
电子学研究领域打下一个良好的基础。这一特点也是目前国内出版的同类教材很难达到的。
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X.V4YmZ-; Js&.p9S2 Preface xvii
t[/APm-k~> CHAPTER 1
G8.nKoHv7x The Crystal Structure of Solids
><qA+/4]_ 1.0 Preview 1
8 q> 1.1 Semiconductor Materials 2
L+CPT 1.2 Types of Solids 3
9w6 uoM 1.3 Space Lattices 4
Wjli(sT#- 1.3.1 Primitive and Unit Cell 4
VV/aec8 1.3.2 Basic Crystal Structures 6
=z4J[8bb 1.3.3 Crystal Planes and Miller Indices
)|GYxG;8C 1.3.4 The Diamond Structure 13
3pe1"maP 1.4 Atomic Bonding 15
7b7WQ 7u 1.5 Imperfections and Impurities in Solids 17
'A9Z (( 1.5.1 Imperfections in Solids 17
|_hIl(6F5N 1.5.2 Impurities in Solids 18
?aguAqG$ 1.6 Growth of Semiconductor Materials 19
pM~-o? 1.6.1 Growth from a Melt 20
V ONC<wC 1.6.2 Epitaxial Growth 22
}/4),W@< 1.7 Device Fabrication Techniques:
('2Z&5 Oxidation 23
DUwms"I,% 1.8 Summary 25
>2ha6A[ Problems 27
4Ik'beZqK CHAPTER 2
!R![:T\, Theory of Solids 31
{$V2L4 2.0 Preview 31
<`u_O!h 2.1 Principles of Quantum Mechanics 32
6m@B.+1 2.1.1 Energy Quanta 32
XRTiC#6 2.1.2 Wave-Particle Duality Principle 34
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2.2 Energy Quantization and Probability Concepts 36
ornU8H` 2.2.1 Physical Meaning of the Wave Function 36
@aP1[( m 2.2.2 The One-Electron Atom 37
>uYU_/y$2 2.2.3 Periodic Table 40
. I."q 2.3 Energy-Band Theory 41
MpTOC&NG%s 2.3.1 Formation of Energy Bands 41
'>HLE) l 2.3.2 The Energy Band and the Bond Model 45
f@k.4aS 2.3.3 Charge Carriers——Electrons and Holes 47
r5y*SoD! 2.3.4 Effective Mass 49
,b:~Vpb1I 2.3.5 Metals, Insulators, and Semiconductors 50
p(fMM : 2.3.6 The k-Space Diagram 52
)iJv?Y\] 2,4 Density of States Function 55
!JBj%| ! 2.5 Statistical Mechanics 57
[c
XSk 2.5.1 Statistical Laws 57
+.g j/uy* 2.5.2 The Fermi-Dirac Distribution Function
ght3# and the Fermi Energy 58
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wB:<ICm 2.6 Summary 64
AY;[v.Ff4 Problems 65
r`pf%9k CHAPTER 3
yb>R(y The Semiconductor in Equilibrium 70
c7.M\f P
3.0 Preview 70
Gzs$0Ki= 3.1 Charge Carriers in Semiconductors 71
Qkw?QV-`k 3.1.1 Equilibrium Distribution of Electrons and Holes 72
L2wX?NA 3.1.2 The no and Po Equations 74
'dqecmB 3.1.3 The Intrinsic Carrier Concentration 79
nFWiS~(#sW 3.1.4 The Intrinsic Fermi-Level Position 82
c|K:oi,z 3.2 Dopant Atoms and Energy Levels 83
qC5IV}9` 3.2.1 Qualitative Description 83
x[u6_6=q9 3.2.2 Ionization Energy 86
oArXP\# 3.2.3 Group III-V Semiconductors 88
Ug384RzHN 3.3 Carrier Distributions in the Extrinsic Semiconductor 89
q,> C^p|2b 3.3.1 Equilibrium Distribution of Electrons and Holes 89
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