《
半导体器件导论》(影印版)还尽量保持了原书的主要优点:(1)注重基本概念和方法。《半导体器件导论》(影印版)从内容的整体编排到具体章节的叙述,都体现了突出
物理概念、强调基本分析方法的指导思想。书中的数学推导和物理分析融为一体,得出的结论不仅对理解物理概念十分重要,而且经得起反复推敲。书中还采用了大量非常清晰的插图,帮助读者更好地理解基本概念。(2)可读性强,便于自学。全书脉络清楚,说理透彻,易于读者理解和掌握。每一章的开头都有引言,告诉读者可以从本章学到什么,应该掌握什么;每一章中都有例题和读者自测题;每一章的最后还有总结、复习提纲和大量
习题(其中包含一些采用计算机进行模拟计算的练习题)。通过举例和练习加深读者对基本概念的理解是《半导体器件导论》(影印版)突出的特点。
XMS:F]HN 《半导体器件导论》(影印版)是美国新墨西哥大学电机与计算机工程系Neamen教授所著的“SereicorlductorPhysics and Devices,3rd edition”一书的改进版本。
oJD]h/fQs 与原书相比,《半导体器件导论》(影印版)更好地将固体晶格结构、量子力学入门知识、固体的量子理论以及半导体物理和半导体器件有机地结合在一起。利用《半导体器件导论》(影印版),学生只需要具有高等数学和大学普通物理的基础,用一个学期就可以系统地学习到半导体器件的基本理论,从而为进入微
电子学研究领域打下一个良好的基础。这一特点也是目前国内出版的同类教材很难达到的。
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9C)VW J&j5@ Preface xvii
c1E{J<pZ CHAPTER 1
Q~(Qh_Ff The Crystal Structure of Solids
j1`<+YT<# 1.0 Preview 1
~qZ6I)? 1.1 Semiconductor Materials 2
Pd+*syOM 1.2 Types of Solids 3
w)|9iL8 1.3 Space Lattices 4
R]yce2w" z 1.3.1 Primitive and Unit Cell 4
S(CkA\[rz 1.3.2 Basic Crystal Structures 6
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:Fe 1.3.3 Crystal Planes and Miller Indices
Ye]K 74M. 1.3.4 The Diamond Structure 13
|Ogh-<|< 1.4 Atomic Bonding 15
6fw7\u 1.5 Imperfections and Impurities in Solids 17
R +@|#! 1.5.1 Imperfections in Solids 17
`^#4okg] 1.5.2 Impurities in Solids 18
l 7uTk5 1.6 Growth of Semiconductor Materials 19
sSfP.R 1.6.1 Growth from a Melt 20
D7nK"]HG;l 1.6.2 Epitaxial Growth 22
^~N:lW#= 1.7 Device Fabrication Techniques:
cBqbbZyUk Oxidation 23
L{VnsY V 1.8 Summary 25
vv&< 7[ Problems 27
OLIMgc(W CHAPTER 2
-HGRrWS Theory of Solids 31
Ce-=
- 2.0 Preview 31
5 eL
b/,R 2.1 Principles of Quantum Mechanics 32
k9oi8G'g~ 2.1.1 Energy Quanta 32
0R? @JC 2.1.2 Wave-Particle Duality Principle 34
_IdW5G 2.2 Energy Quantization and Probability Concepts 36
#w%-IhP 2.2.1 Physical Meaning of the Wave Function 36
KDb j
C'3 2.2.2 The One-Electron Atom 37
*lA+-gkK* 2.2.3 Periodic Table 40
##BbR 2.3 Energy-Band Theory 41
qpFxl 2.3.1 Formation of Energy Bands 41
31c*^ZE. 2.3.2 The Energy Band and the Bond Model 45
F?tWx+N<{ 2.3.3 Charge Carriers——Electrons and Holes 47
aV7VbC 2.3.4 Effective Mass 49
}F0<8L6% 2.3.5 Metals, Insulators, and Semiconductors 50
"f
89 2.3.6 The k-Space Diagram 52
2~\SUGW- 2,4 Density of States Function 55
E oixw8hz 2.5 Statistical Mechanics 57
)#z{P[X^ 2.5.1 Statistical Laws 57
X+sKG5nS 2.5.2 The Fermi-Dirac Distribution Function
UapU:>!"` and the Fermi Energy 58
%y9sC1T 2.5.3 Maxwell-Boltzmann Approximation 62
N@tKgx 2.6 Summary 64
7omHorU+ Problems 65
M.,DXEZT CHAPTER 3
a9;KS>~bq The Semiconductor in Equilibrium 70
5-GS@fY 3.0 Preview 70
@Ol(:{< 3.1 Charge Carriers in Semiconductors 71
,v mn{gz 3.1.1 Equilibrium Distribution of Electrons and Holes 72
WPsfl8@D 3.1.2 The no and Po Equations 74
vGlVr.) 3.1.3 The Intrinsic Carrier Concentration 79
YFS6YA 3.1.4 The Intrinsic Fermi-Level Position 82
xi{r-D8Z 3.2 Dopant Atoms and Energy Levels 83
;8XRs?xyd 3.2.1 Qualitative Description 83
+kd1q 3.2.2 Ionization Energy 86
`1P|<VbZ 3.2.3 Group III-V Semiconductors 88
0sU*3 r? 3.3 Carrier Distributions in the Extrinsic Semiconductor 89
Lhp&RGy 3.3.1 Equilibrium Distribution of Electrons and Holes 89
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