《
半导体器件导论》(影印版)还尽量保持了原书的主要优点:(1)注重基本概念和方法。《半导体器件导论》(影印版)从内容的整体编排到具体章节的叙述,都体现了突出
物理概念、强调基本分析方法的指导思想。书中的数学推导和物理分析融为一体,得出的结论不仅对理解物理概念十分重要,而且经得起反复推敲。书中还采用了大量非常清晰的插图,帮助读者更好地理解基本概念。(2)可读性强,便于自学。全书脉络清楚,说理透彻,易于读者理解和掌握。每一章的开头都有引言,告诉读者可以从本章学到什么,应该掌握什么;每一章中都有例题和读者自测题;每一章的最后还有总结、复习提纲和大量
习题(其中包含一些采用计算机进行模拟计算的练习题)。通过举例和练习加深读者对基本概念的理解是《半导体器件导论》(影印版)突出的特点。
=Fr(9( 《半导体器件导论》(影印版)是美国新墨西哥大学电机与计算机工程系Neamen教授所著的“SereicorlductorPhysics and Devices,3rd edition”一书的改进版本。
2j[&=R/. 与原书相比,《半导体器件导论》(影印版)更好地将固体晶格结构、量子力学入门知识、固体的量子理论以及半导体物理和半导体器件有机地结合在一起。利用《半导体器件导论》(影印版),学生只需要具有高等数学和大学普通物理的基础,用一个学期就可以系统地学习到半导体器件的基本理论,从而为进入微
电子学研究领域打下一个良好的基础。这一特点也是目前国内出版的同类教材很难达到的。
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<fFTY130: ZXuv CI Preface xvii
9*1,!%] CHAPTER 1
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1WM+ The Crystal Structure of Solids
fk x \= 1.0 Preview 1
6gs01c,BA 1.1 Semiconductor Materials 2
t>$kWd{9e; 1.2 Types of Solids 3
y;o^- O 1.3 Space Lattices 4
SrK) t.oK 1.3.1 Primitive and Unit Cell 4
iB& 4>+N+ 1.3.2 Basic Crystal Structures 6
5w@4:$=I 1.3.3 Crystal Planes and Miller Indices
SV~~Q_U9 1.3.4 The Diamond Structure 13
0PrLuejz 1.4 Atomic Bonding 15
AQ[GO6$,%H 1.5 Imperfections and Impurities in Solids 17
}=]M2} 1.5.1 Imperfections in Solids 17
tyqT 1.5.2 Impurities in Solids 18
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1.6 Growth of Semiconductor Materials 19
dKxyA"@ 1.6.1 Growth from a Melt 20
9uA>N 1.6.2 Epitaxial Growth 22
J:zU,IIJ 1.7 Device Fabrication Techniques:
]n~ilS.rkl Oxidation 23
_zwG\I|Q 1.8 Summary 25
%s(k_|G+4 Problems 27
N#a$t& CHAPTER 2
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Q{ Theory of Solids 31
vz7J-CH 2.0 Preview 31
uW}s)j. 2.1 Principles of Quantum Mechanics 32
7M<'/s 2.1.1 Energy Quanta 32
ZU%[guf 2.1.2 Wave-Particle Duality Principle 34
PU^l. 2.2 Energy Quantization and Probability Concepts 36
*=I}Qh(1 2.2.1 Physical Meaning of the Wave Function 36
|='z{WS 2.2.2 The One-Electron Atom 37
c5D) 2.2.3 Periodic Table 40
@8ppEFw 2.3 Energy-Band Theory 41
W)f/0QX}W 2.3.1 Formation of Energy Bands 41
r 0iK 2.3.2 The Energy Band and the Bond Model 45
S9~+c 2.3.3 Charge Carriers——Electrons and Holes 47
jGpN,/VQa 2.3.4 Effective Mass 49
s pp f 2.3.5 Metals, Insulators, and Semiconductors 50
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,z3xU 2.3.6 The k-Space Diagram 52
xY^%&n 2,4 Density of States Function 55
9|gr0~j 2.5 Statistical Mechanics 57
yU-e3O7L 2.5.1 Statistical Laws 57
:6 Lx@ 2.5.2 The Fermi-Dirac Distribution Function
'DL`Ee\ and the Fermi Energy 58
f>UXD 2.5.3 Maxwell-Boltzmann Approximation 62
^!<BQP7 2.6 Summary 64
P>NF.BCq Problems 65
a@UZb CHAPTER 3
SfaQvstN The Semiconductor in Equilibrium 70
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T{3o;A 3.0 Preview 70
#x 177I\ 3.1 Charge Carriers in Semiconductors 71
sE Q=dcK 3.1.1 Equilibrium Distribution of Electrons and Holes 72
#\ X#w<\? 3.1.2 The no and Po Equations 74
y+c|vdW% 3.1.3 The Intrinsic Carrier Concentration 79
4O )1uF; 3.1.4 The Intrinsic Fermi-Level Position 82
pH"#8O& 3.2 Dopant Atoms and Energy Levels 83
K,:cJ 3.2.1 Qualitative Description 83
5?3Me59 3.2.2 Ionization Energy 86
q#,f 4P 3.2.3 Group III-V Semiconductors 88
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d 3.3 Carrier Distributions in the Extrinsic Semiconductor 89
DkvF 5c& 3.3.1 Equilibrium Distribution of Electrons and Holes 89
9NQlI1Wz4 ……
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