《
半导体器件导论》(影印版)还尽量保持了原书的主要优点:(1)注重基本概念和方法。《半导体器件导论》(影印版)从内容的整体编排到具体章节的叙述,都体现了突出
物理概念、强调基本分析方法的指导思想。书中的数学推导和物理分析融为一体,得出的结论不仅对理解物理概念十分重要,而且经得起反复推敲。书中还采用了大量非常清晰的插图,帮助读者更好地理解基本概念。(2)可读性强,便于自学。全书脉络清楚,说理透彻,易于读者理解和掌握。每一章的开头都有引言,告诉读者可以从本章学到什么,应该掌握什么;每一章中都有例题和读者自测题;每一章的最后还有总结、复习提纲和大量
习题(其中包含一些采用计算机进行模拟计算的练习题)。通过举例和练习加深读者对基本概念的理解是《半导体器件导论》(影印版)突出的特点。
=CqLZ$10 《半导体器件导论》(影印版)是美国新墨西哥大学电机与计算机工程系Neamen教授所著的“SereicorlductorPhysics and Devices,3rd edition”一书的改进版本。
bo@1c0 与原书相比,《半导体器件导论》(影印版)更好地将固体晶格结构、量子力学入门知识、固体的量子理论以及半导体物理和半导体器件有机地结合在一起。利用《半导体器件导论》(影印版),学生只需要具有高等数学和大学普通物理的基础,用一个学期就可以系统地学习到半导体器件的基本理论,从而为进入微
电子学研究领域打下一个良好的基础。这一特点也是目前国内出版的同类教材很难达到的。
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Z&}94 sjzZl*GSy Preface xvii
8ztY_"]3p CHAPTER 1
U1&m-K The Crystal Structure of Solids
q&P" 1.0 Preview 1
zfxxPL' 1.1 Semiconductor Materials 2
vwT?Bp 1.2 Types of Solids 3
D%BV83S 1.3 Space Lattices 4
g4~{#P^i 1.3.1 Primitive and Unit Cell 4
-aec1+o 1.3.2 Basic Crystal Structures 6
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K.+B 1.3.3 Crystal Planes and Miller Indices
Z?^AX&F 1.3.4 The Diamond Structure 13
UDxfS4yI 1.4 Atomic Bonding 15
2p'qp/ 1.5 Imperfections and Impurities in Solids 17
/h 1.5.1 Imperfections in Solids 17
Xf Y]qQP 1.5.2 Impurities in Solids 18
]i{-@Ven 1.6 Growth of Semiconductor Materials 19
$osDw1C 1.6.1 Growth from a Melt 20
*VL-b8'A< 1.6.2 Epitaxial Growth 22
b
~F85U2 1.7 Device Fabrication Techniques:
-o=qYkyLK Oxidation 23
:@n e29,} 1.8 Summary 25
=NlAGzv!w Problems 27
X\flx~ CHAPTER 2
2.2 s>?\ Theory of Solids 31
GV%ibqOpQj 2.0 Preview 31
hL&z"_` 2.1 Principles of Quantum Mechanics 32
7MBz&wE^f 2.1.1 Energy Quanta 32
U${dWxC 2.1.2 Wave-Particle Duality Principle 34
1k;X*r# 2.2 Energy Quantization and Probability Concepts 36
t&-7AjS5 2.2.1 Physical Meaning of the Wave Function 36
SVeL c 2.2.2 The One-Electron Atom 37
QhN5t/Hr 2.2.3 Periodic Table 40
C/lpSe 2.3 Energy-Band Theory 41
ek3/`]V: 2.3.1 Formation of Energy Bands 41
r1t TY? 2.3.2 The Energy Band and the Bond Model 45
?n[+0a:8E 2.3.3 Charge Carriers——Electrons and Holes 47
6&h,eQ! 2.3.4 Effective Mass 49
ky[FNgQ3n 2.3.5 Metals, Insulators, and Semiconductors 50
hXZk$a' 2.3.6 The k-Space Diagram 52
>a]{q^0 2,4 Density of States Function 55
<sn^>5Ds 2.5 Statistical Mechanics 57
+jQW 6k# 2.5.1 Statistical Laws 57
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2.5.2 The Fermi-Dirac Distribution Function
o_jVtEP and the Fermi Energy 58
.hn"NXy 2.5.3 Maxwell-Boltzmann Approximation 62
z,$^|'pP 2.6 Summary 64
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u Problems 65
h\:"k_u# CHAPTER 3
{QJJw}!# The Semiconductor in Equilibrium 70
1[mX_ }K 3.0 Preview 70
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Z+FJ cvYx 3.1.1 Equilibrium Distribution of Electrons and Holes 72
yA=#Ji 3.1.2 The no and Po Equations 74
F d *p3a 3.1.3 The Intrinsic Carrier Concentration 79
/_>S0 3.1.4 The Intrinsic Fermi-Level Position 82
a$"3T 3.2 Dopant Atoms and Energy Levels 83
,D;d#fJ 3.2.1 Qualitative Description 83
@2Z{en? 3.2.2 Ionization Energy 86
8,=,'gFO 3.2.3 Group III-V Semiconductors 88
-PoW56 3.3 Carrier Distributions in the Extrinsic Semiconductor 89
~xkcQ{ 3.3.1 Equilibrium Distribution of Electrons and Holes 89
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