《
半导体器件导论》(影印版)还尽量保持了原书的主要优点:(1)注重基本概念和方法。《半导体器件导论》(影印版)从内容的整体编排到具体章节的叙述,都体现了突出
物理概念、强调基本分析方法的指导思想。书中的数学推导和物理分析融为一体,得出的结论不仅对理解物理概念十分重要,而且经得起反复推敲。书中还采用了大量非常清晰的插图,帮助读者更好地理解基本概念。(2)可读性强,便于自学。全书脉络清楚,说理透彻,易于读者理解和掌握。每一章的开头都有引言,告诉读者可以从本章学到什么,应该掌握什么;每一章中都有例题和读者自测题;每一章的最后还有总结、复习提纲和大量
习题(其中包含一些采用计算机进行模拟计算的练习题)。通过举例和练习加深读者对基本概念的理解是《半导体器件导论》(影印版)突出的特点。
IL_d:HF|1 《半导体器件导论》(影印版)是美国新墨西哥大学电机与计算机工程系Neamen教授所著的“SereicorlductorPhysics and Devices,3rd edition”一书的改进版本。
(5Sivw*mP 与原书相比,《半导体器件导论》(影印版)更好地将固体晶格结构、量子力学入门知识、固体的量子理论以及半导体物理和半导体器件有机地结合在一起。利用《半导体器件导论》(影印版),学生只需要具有高等数学和大学普通物理的基础,用一个学期就可以系统地学习到半导体器件的基本理论,从而为进入微
电子学研究领域打下一个良好的基础。这一特点也是目前国内出版的同类教材很难达到的。
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bZx!0>h ?GTU=gpQ Preface xvii
qT/Do?Y CHAPTER 1
]m#5`zGK1| The Crystal Structure of Solids
-TZ p
FT" 1.0 Preview 1
2Dd|~{% 1.1 Semiconductor Materials 2
*UW=Mdt 1.2 Types of Solids 3
Ix|~f1*% 1.3 Space Lattices 4
8J)xzp`*) 1.3.1 Primitive and Unit Cell 4
\Ofw8=N-2 1.3.2 Basic Crystal Structures 6
@/&b;s73 1.3.3 Crystal Planes and Miller Indices
% },Pe 1.3.4 The Diamond Structure 13
}CxvT`/ 1.4 Atomic Bonding 15
?RzD Qy D 1.5 Imperfections and Impurities in Solids 17
)+H[kiN 1.5.1 Imperfections in Solids 17
i!~'M;S 1.5.2 Impurities in Solids 18
TPE:e)GO 1.6 Growth of Semiconductor Materials 19
z>R#H/h+ 1.6.1 Growth from a Melt 20
_W3Y\cs,- 1.6.2 Epitaxial Growth 22
g=T/_ 1.7 Device Fabrication Techniques:
2 3KyCV5 Oxidation 23
V3mAvmx 1.8 Summary 25
iBudmT8 Problems 27
1qi@uYDug CHAPTER 2
*4|Hqa Theory of Solids 31
MlW 8t[ 2.0 Preview 31
KS*oxZ 2.1 Principles of Quantum Mechanics 32
oRp:B& 2.1.1 Energy Quanta 32
gh6d&ucQ^ 2.1.2 Wave-Particle Duality Principle 34
k'_ P7 2.2 Energy Quantization and Probability Concepts 36
8j1ekv 2.2.1 Physical Meaning of the Wave Function 36
iK{T^vvk 2.2.2 The One-Electron Atom 37
}`yiT<z 2.2.3 Periodic Table 40
Y\v-,xPm 2.3 Energy-Band Theory 41
;W:6{9m ze 2.3.1 Formation of Energy Bands 41
^Y{D^\}, 2.3.2 The Energy Band and the Bond Model 45
#0;HOeIiH 2.3.3 Charge Carriers——Electrons and Holes 47
zX{ .^| 2.3.4 Effective Mass 49
ESb
]}c: 2.3.5 Metals, Insulators, and Semiconductors 50
$j)hNWI 2.3.6 The k-Space Diagram 52
s=Q(C[%I 2,4 Density of States Function 55
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\2#Dpr 2.5 Statistical Mechanics 57
irTv4ZE'+l 2.5.1 Statistical Laws 57
M`D$!BJr 2.5.2 The Fermi-Dirac Distribution Function
^6p'YYj"5 and the Fermi Energy 58
Tp<k<uKD 2.5.3 Maxwell-Boltzmann Approximation 62
3z;_KmM 2.6 Summary 64
@U -$dw'4 Problems 65
s~26 CHAPTER 3
p4VSma_( The Semiconductor in Equilibrium 70
~YCuO0t 3.0 Preview 70
N_75-S7Cm 3.1 Charge Carriers in Semiconductors 71
>NV=LOO 3.1.1 Equilibrium Distribution of Electrons and Holes 72
)gR=<oa 3.1.2 The no and Po Equations 74
z(c9,3 3.1.3 The Intrinsic Carrier Concentration 79
si(;y]( 3.1.4 The Intrinsic Fermi-Level Position 82
)R{UXk3q} 3.2 Dopant Atoms and Energy Levels 83
4 c'4*`I 3.2.1 Qualitative Description 83
7.bN99{xPM 3.2.2 Ionization Energy 86
*@ED}Mj+ 3.2.3 Group III-V Semiconductors 88
U\+&cob. 3.3 Carrier Distributions in the Extrinsic Semiconductor 89
6gOe!mm 3.3.1 Equilibrium Distribution of Electrons and Holes 89
oN(-rWdhZ ……
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