光从GaN出来。经过 ITO,SiO2 到空气。
ashcvn~z 需要把ITO和SiO2的厚度设计成曾透的厚度。
4VN aq<8 用
TFCalc如何设计,求详解?如何设置这些
参数,和后续的操作?
P[t$\FS _9:@Vl]Q@
^GN8V-X4y
R)!`JKeO/
')+0nPV
Reference '%v#v 3'
Wavelength(参考波长):
,]R8(bD)
HOt>}x
U7&x rif
4n
3Tp{Y}
mxrG)n6Y
Illuminate(光源):
;D ~L|
Z.&\=qiY
~E4"}n[3A#
T+"f]v
b|^I<7
Incident H;<!TX.zD
angle(入射角):
"cho }X
4C~UcGMv\
x)5V.q
#i QX6WF
&UAe!{E0
Incident "YFls#4H-
medium(入射介质):
x_@i(oQ:_
toa-Wa{
ic6L9>[
i~=s^8n`l
Iyk6=&?j
Substrate(基底)
L^9HH)Jc
'TN)Lb*
`ZHP1uQ<
&ju-
^<V9'Ut
Thickness(厚度)mm
U+]Jw\\l
8?TKN~ja
J$uM 03
Dxx;v .$
ph30'"[Z}
Exit XL<
)v_
medium(出射介质)
^kj=<+ v#
e]W0xC-
jy$@a%FD
^,s?e.u$8`
\,W.0#D8v4
Detector(探测器):
$B\E.ml.
_pDjg%A>n
I{.HO<$7D}
='Oj4T
Q49BU@xX
First 9$WJ"]
Surface(第一面)
F+=urc>w
[$:,-Q @
c c G['7
Zy$L rr!
c;!g