高
功率LED製程技術
-#N.X_F q1d}{DU 目录
<h:x= kY-N>E: LED 發展
J;8IY= GaN發光效率
0"28' Conventional versus Power LED
`xqr{lhL TYNTEK 40 mil Power chip
!ug8SAOaz/ Snellius Law 全反射臨界角損失
~d|A!S` Light Extraction
Nh_Mz;ITuu Lumileds AlGaInP LED
1SCR.@k< Improved design of LEDs to increase efficiency
EVsC >rz Lumileds AlGaInP LED
*Doa*wQ Truncated-inverted-pyramid LED
of%Ktm5Qi Cree Standard and TIP LED的出光表現
CVL3VT1j0 Osram’s InGaN Chip
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[\v}Ul 鑽石切割與雷射切割
K8GP@yD]M 共晶接合
+M\`#i\g> Au-Sn phase diagram
eg;~zv 超音波接合
(X\@t-8 專利 Lumileds-3
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` 覆晶元件的可靠度
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Q ayPo]O 3Q.#c,`jV 下载地址:
http://www.opticsky.cn/read-htm-tid-10825.html