高
功率LED製程技術
*V[I&dKq [EK^0g 目录
{j4&'=C: ^E~1%Md. LED 發展
7c6-
o"A GaN發光效率
,v?FR
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;*=7>"o'` TYNTEK 40 mil Power chip
t5 P8?q\ Snellius Law 全反射臨界角損失
b7gN|Hw5 H Light Extraction
DUg[L Lumileds AlGaInP LED
j*d+WZm8-g Improved design of LEDs to increase efficiency
$-s8tc( Lumileds AlGaInP LED
0vMKyT3 c Truncated-inverted-pyramid LED
+&E\w,Vq^ Cree Standard and TIP LED的出光表現
i8%@4U/ J Osram’s InGaN Chip
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uWP0(6 % 鑽石切割與雷射切割
qt4%=E;[ 共晶接合
yf4 i!~ Au-Sn phase diagram
+G,_|C2J 超音波接合
abS3hf 專利 Lumileds-3
]Z52L`k 覆晶元件的可靠度
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*_H]?& xmfZ5nVL 下载地址:
http://www.opticsky.cn/read-htm-tid-10825.html