高
功率LED製程技術
TW'E99wG pjaiAe!k 目录
VyB\]EBu xe"4u JO LED 發展
82G lbd) GaN發光效率
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8<E!rn- TYNTEK 40 mil Power chip
H5 p}Le Snellius Law 全反射臨界角損失
hr)+Pk Light Extraction
wrZ7Sr!/V Lumileds AlGaInP LED
>!:$@!6L Improved design of LEDs to increase efficiency
Z%, \+tRe Lumileds AlGaInP LED
>X-ed Truncated-inverted-pyramid LED
.E?bH V Cree Standard and TIP LED的出光表現
;:#?~%7> Osram’s InGaN Chip
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jsZiARTZRl 鑽石切割與雷射切割
Fi,e}j=2f 共晶接合
,yB?~ Au-Sn phase diagram
{<''OwQF~+ 超音波接合
3D 4]yR5 專利 Lumileds-3
tEpIyC 覆晶元件的可靠度
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kR`6s t1.zWe+C>3 下载地址:
http://www.opticsky.cn/read-htm-tid-10825.html