高
功率LED製程技術
TlBu3z'P w+ibY 目录
^UpwVKdP o|a]Q LED 發展
QNm.8c$ GaN發光效率
TH}+'m Conventional versus Power LED
P\|i<Ds_M TYNTEK 40 mil Power chip
!}uev Snellius Law 全反射臨界角損失
POUD*(DqNK Light Extraction
t3$+;K( Lumileds AlGaInP LED
Ne,u\q3f Improved design of LEDs to increase efficiency
p>]2o\[" Lumileds AlGaInP LED
W>7 o
ec Truncated-inverted-pyramid LED
Vt,"5c Cree Standard and TIP LED的出光表現
>*mLbp" Osram’s InGaN Chip
HV6'0_R0 ...........
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=G2A Ufn ..........
h|'T'l&z 鑽石切割與雷射切割
vV9q5Bj: 共晶接合
SA$1rqU= Au-Sn phase diagram
'xp&)gL 超音波接合
|[lM2 專利 Lumileds-3
e6?h4}[+* 覆晶元件的可靠度
s8N\cOd#i ....................
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