高
功率LED製程技術
>MiA|N= D&Ngg)_Mq 目录
bLaD1rnGi }{]{`\ LED 發展
.`xcR]PQ GaN發光效率
64b9.5Bn Conventional versus Power LED
.\*\bvyCw TYNTEK 40 mil Power chip
9Tjvc! 4_b Snellius Law 全反射臨界角損失
2 B5kpmH: Light Extraction
pS0-<-\R Lumileds AlGaInP LED
U:YT>U1Z Improved design of LEDs to increase efficiency
ke)3*.Y%C Lumileds AlGaInP LED
eT:%i"C Truncated-inverted-pyramid LED
(w"zI! Cree Standard and TIP LED的出光表現
D@O'8 Osram’s InGaN Chip
>{npg2 ...........
3lA<{m;V ...........
n'%*vdHKm ..........
pEhWgCL 鑽石切割與雷射切割
t2tH%%Rs 共晶接合
&$vDC M4 Au-Sn phase diagram
?G.9D`95 超音波接合
f,`FbT 專利 Lumileds-3
L=zeFn 覆晶元件的可靠度
*!lq1h ....................
bpKMQrwd #r:J,D6* 下载地址:
http://www.opticsky.cn/read-htm-tid-10825.html