《
半导体器件导论》(影印版)还尽量保持了原书的主要优点:(1)注重基本概念和方法。《半导体器件导论》(影印版)从内容的整体编排到具体章节的叙述,都体现了突出
物理概念、强调基本分析方法的指导思想。书中的数学推导和物理分析融为一体,得出的结论不仅对理解物理概念十分重要,而且经得起反复推敲。书中还采用了大量非常清晰的插图,帮助读者更好地理解基本概念。(2)可读性强,便于自学。全书脉络清楚,说理透彻,易于读者理解和掌握。每一章的开头都有引言,告诉读者可以从本章学到什么,应该掌握什么;每一章中都有例题和读者自测题;每一章的最后还有总结、复习提纲和大量
习题(其中包含一些采用计算机进行模拟计算的练习题)。通过举例和练习加深读者对基本概念的理解是《半导体器件导论》(影印版)突出的特点。
Kh<v2 《半导体器件导论》(影印版)是美国新墨西哥大学电机与计算机工程系Neamen教授所著的“SereicorlductorPhysics and Devices,3rd edition”一书的改进版本。
woR((K] #G 与原书相比,《半导体器件导论》(影印版)更好地将固体晶格结构、量子力学入门知识、固体的量子理论以及半导体物理和半导体器件有机地结合在一起。利用《半导体器件导论》(影印版),学生只需要具有高等数学和大学普通物理的基础,用一个学期就可以系统地学习到半导体器件的基本理论,从而为进入微
电子学研究领域打下一个良好的基础。这一特点也是目前国内出版的同类教材很难达到的。
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dP)8T ?A62VV51CN .^JID~<?# Preface xvii
*%Gy-5hM CHAPTER 1
VJ_E]}H The Crystal Structure of Solids
A*\4C3a'% 1.0 Preview 1
puXJ:yo( 1.1 Semiconductor Materials 2
2vj)3%:7#E 1.2 Types of Solids 3
8{?Oi'-|0 1.3 Space Lattices 4
%HYC-TF# 1.3.1 Primitive and Unit Cell 4
i7 p#%2 1.3.2 Basic Crystal Structures 6
Zls4@/\Q 1.3.3 Crystal Planes and Miller Indices
/jj}.X7yH 1.3.4 The Diamond Structure 13
LgUaX 1.4 Atomic Bonding 15
+hXph 1.5 Imperfections and Impurities in Solids 17
[FyE{NfiJ% 1.5.1 Imperfections in Solids 17
#+Vvf 1.5.2 Impurities in Solids 18
#XJYkaL 1.6 Growth of Semiconductor Materials 19
/-BplU*"9 1.6.1 Growth from a Melt 20
p[Q 1.6.2 Epitaxial Growth 22
lX5(KUN 1.7 Device Fabrication Techniques:
,dh*GJ{5 Oxidation 23
{'d?vm!r 1.8 Summary 25
P\N`E?lJL Problems 27
2d$hgR#v CHAPTER 2
I[[rVts Theory of Solids 31
lfj>]om$ 2.0 Preview 31
-QZped;?* 2.1 Principles of Quantum Mechanics 32
IK%j+UB 2.1.1 Energy Quanta 32
O^:Rm=,$ 2.1.2 Wave-Particle Duality Principle 34
l'3NiIX 2.2 Energy Quantization and Probability Concepts 36
t}'Oh}CG 2.2.1 Physical Meaning of the Wave Function 36
$fnFi|- 2.2.2 The One-Electron Atom 37
ej!C^ 2.2.3 Periodic Table 40
<'GI<Hc 2.3 Energy-Band Theory 41
/1MO]u\ 2.3.1 Formation of Energy Bands 41
w,`x(!& 2.3.2 The Energy Band and the Bond Model 45
1L &_3} 2.3.3 Charge Carriers——Electrons and Holes 47
Ns1u0$fg 2.3.4 Effective Mass 49
'{OZ[$E 2.3.5 Metals, Insulators, and Semiconductors 50
6"A|)fz 2.3.6 The k-Space Diagram 52
G3?8GTH 2,4 Density of States Function 55
?J<4IvL/ 2.5 Statistical Mechanics 57
PJ
#uYM 2.5.1 Statistical Laws 57
#~p1\['|M 2.5.2 The Fermi-Dirac Distribution Function
;TaT=% and the Fermi Energy 58
8Cm^#S,+ 2.5.3 Maxwell-Boltzmann Approximation 62
>nl*aN 2.6 Summary 64
gCwg ;c- Problems 65
fMLm_5 (H CHAPTER 3
:&TOQ<vM The Semiconductor in Equilibrium 70
Sf*VkH 3.0 Preview 70
@~a52'\ 3.1 Charge Carriers in Semiconductors 71
gL}K84T$S 3.1.1 Equilibrium Distribution of Electrons and Holes 72
#j; &g1 3.1.2 The no and Po Equations 74
< ^J!*> 3.1.3 The Intrinsic Carrier Concentration 79
?,s{M^sj^ 3.1.4 The Intrinsic Fermi-Level Position 82
_Thc\{aV# 3.2 Dopant Atoms and Energy Levels 83
k87B+0QEL 3.2.1 Qualitative Description 83
!-2S(8 3.2.2 Ionization Energy 86
"$Rl9(} 3.2.3 Group III-V Semiconductors 88
KWN&nP
+ 3.3 Carrier Distributions in the Extrinsic Semiconductor 89
=2`s Uw} 3.3.1 Equilibrium Distribution of Electrons and Holes 89
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