新势力光电供应压力传感器芯片

新势力光电供应压力传感器芯片，采用高级电阻传感技术（STARe, Sensor Technology for AdvancedResistors），特点：稳定性高、适用于恶劣环境，该系列压力传感器芯片应用：腐蚀性、流动性、油性环境下的高精密压力传感测量，包括：汽车制造、工业、医疗、大型家电。 V ^hR%*i'  
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-s9()K(vZG   Type	U,7}VdO   Pressure	ibh,d.*~g   Min	zAH6SaI$   Typ	!p{ CsR8c   Max	cng166}1A   Unit
Ny l)B7/w   The Pressure sensor chips are based onthe STARe (Sensor Technology for Advanced Resistors)
p|Nh:4iN   Standard Line STARe, Piezoresistive chipsfor pressure measurements of 1 to 30 bar
aBWA hn   SL21K-100k-A/GXX	tYCVVs`?   100 kPa	CRPE:7,D   40	Y Z^mH <   70	_[$,WuG1   130	kxt/I<cs   mV@5V
YpEH(tq   SL21K-250k-A/GXX	~ ;ObT=   250 kPa	8QQh1q2   60	:r9<wbr)k0   100	b!`{fwV   140
>Xw0i\G   SL21K-500k-A/GXX	l;}3J3/qq]   500 kPa	hd@jm^k   60	$) m$c5!   100	Y]bS=*q   140
LpN3cy>U   SL21K-01M0-A/GXX	1C(sBU"   1.0 MPa	1h?QEZ,6a   60	]D[\l$(   100	$0|`h)&   140
1H  \   SL21K-03M0-A/GXX	zJo? ,c   3.0 MPa	"<&) G{   60	NiD_v   100	c/E'GG%Q%   140
P=R-1V   Industrial Line STARe, Piezoresistivechips for pressure measurements of 100 mbar to 400 bar
_fS4a134R   IL20L-10k0-GXX	i(> WeC+   10 kPa	& pW2R}   30	}VeE4-p B   60	o+Fm+5t;   120	wU|jw(   mV@5V
Z?u}?-b1\H   IL20L-35k0-A/GXX	^G4@cR.An   35 kPa	K #}t \   40	/[E2+g   100	934@Z(aUH   160
w@pJ49   IL20M-03M0-A/GXX	|G_ ,1$   3.0 MPa	2}15FXgN   60	/}9)ZYMx   100	O_L>We@3E   140
$$i Gs6az   IL20M-100k-A/GXX	.q1y)l-^Z   100 kPa	N5zx#g   60	MV]`[^xQ5   100	,0{x-S0jX<   140
qiH)J- ~GZ   IL20M-250k-A/GXX	_=}.Sg5Q   250 kPa	\>x1#Vr>#V   60	KW$.Yy   100	X8):R - J   140
@km4qJZ   IL20M-500k-A/GXX	M4(57b[`   500 kPa	Vh>|F}%E   60	@WNqD*)1   100	_}F_Q5)   140
sR/y|   IL20M-01M0-A/GXX	NF 7   1.0 MPa	BS(jC   60	cg_ " }]Y1   100	`@ny!S|1/   140
Rh#`AM`)j   IL20M-10M0-A/GXX	?d+ri   10.0 MPa	;tQ(l%!   200	a~?B/ g&_   250	p=3t!3   300
P+BGCc%);B   IL20M-40M0-AXX	i[I&m]N   40.0 MPa	Mdq|:^px   230	#<X4RJ   290	#%w+PL:*O   350
)O5@R   High Stability Line STARe, Piezoresistivechips for pressure measurements of 60 mbar to 400 bar
cQ'x]u_   HS20V-06k0-A/G/D05	c91^7@Xv   6 kPa	$41<ldJ   60	v|KIVBkbT   100	vG7Mk8mIr   140	.)=*Yr M   mV@5V
N;,zPWa   HS20V-10k0-A/G/D05	~`="tzr:   10 kPa	]#W7-Q;]   60	Pm%5c\ef   100	V'tR \b   140
#!E`%' s]   HS20L-35k0-A/G/DXX	E0/>E   35 kPa	BMI`YGjY1   60	v 2p   100	IaQm)"Z   140
-2!S>P Zs   HS20L-100k-A/G/DXX	/KNR;n'   100 kPa	7VG*Wu   60	v*0J6<   100	QmSMDWkh   140
A FBH(ms't   HS20M-250k-A/G/DXX	b8Z_oN5!   250 kPa	}EYmz/nN   60	?iV}U   100	R)ZzRz|/   140
(F 9P1Iq   HS20M-500k-A/G/DXX	tzfyS#E   500 kPa	qA\&%n^j]   60	Ook\CK*nKe   100	|&xaV-b9W   140
1L+hI=\O   HS20M-01M0-A/G/DXX	:3XvHL0rx   1.0 MPa	{[`(o 0@(   60	"" >Yw/'   100	]n>9(Mp!M   140
6P}?+ Gc   HS20M-03M0-A/G/XX	GF9[|). T   3.0 MPa	a'/C)fplL   60	-s!J3DB   100	5z9hcQAS   140
-:pVDxO   HS20M-10M0-A/GXX	D "5|\   10.0 MPa	&bfM`h'   200	9H;Os:"\|   250	s8[(    300
yUD@oOVC0   HS20M-20M0-A08	{5D%<Te   20.0 MPa	R-dv$z0   60	ULu@"   100	SP<Sv8Okj   140
uL-kihV:-   HS20M-40M0-A08	rir,|y,   40.0 MPa	v;5-1   60	p7Zeudmj   100	EtPB_! +   140
=liyd74%`   Harsh Environmental Line, Piezoresistivechips for pressure measurements of 2 bar to 16 bar
V`LE 'E   HE11C-200K-AXX	QxaMe 8(   200 kPa	v;G/8>GRy   60	6Iv};f"Y   100	VyNF)$'T   140	&&52ji<3   mV@5V
UJDI[`2   HE11C-400K-AXX	`>g\gaQ   400 kPa	'Y GP42#   60	k$m'ebrS.~   100	9z{}DBA   140
^Ss<<   HE11C-800K-AXX	j DEym&-   800 kPa	RA!m,"RM   60	bv(+$YR   100	yx&}bu\   140
a6ryyt 5   HE11C-01M6-AXX	.pe.K3G&   1.6 MPa	m(:R(K(je   60	YGM7?o   100	3hBYx@jTO   140

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