新势力光电供应压力传感器芯片

新势力光电供应压力传感器芯片，采用高级电阻传感技术（STARe, Sensor Technology for AdvancedResistors），特点：稳定性高、适用于恶劣环境，该系列压力传感器芯片应用：腐蚀性、流动性、油性环境下的高精密压力传感测量，包括：汽车制造、工业、医疗、大型家电。 <,D*m+BWn  
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=nqHVRA   Type	UqNUX?(   Pressure	}b/P\1#z   Min	:aH5=@[!y   Typ	} Eh & '   Max	rR 86D   Unit
_<=h#lH   The Pressure sensor chips are based onthe STARe (Sensor Technology for Advanced Resistors)
I5 qrHBJ >   Standard Line STARe, Piezoresistive chipsfor pressure measurements of 1 to 30 bar
h`iOs>   SL21K-100k-A/GXX	-gUp/#l1   100 kPa	?:G 3U\M   40	M=3gV?N   70	aemi;61T\   130	ck\W'Y*Q7   mV@5V
Ej1<T,w_   SL21K-250k-A/GXX	7Gy:T47T\@   250 kPa	~S\> F\v6'   60	W #=,FZT   100	5{ bc&?"   140
_*MK"   SL21K-500k-A/GXX	!#=3>\np+X   500 kPa	*"OUwEla   60	!F.h+&^D ;   100	!-%XrU8o3   140
2_y]MXG+%   SL21K-01M0-A/GXX	p4 =/rkq   1.0 MPa	{Ay dt8   60	1GK>&;   100	ZvMU3] )u   140
~clX2U8u`   SL21K-03M0-A/GXX	6?;z\AP&   3.0 MPa	Pc2!OQC'""   60	O1bW, n(   100	zo8D"   140
~?FhQd\Q   Industrial Line STARe, Piezoresistivechips for pressure measurements of 100 mbar to 400 bar
?{e}ouKYX1   IL20L-10k0-GXX	*UJ4\   10 kPa	0^sY>N"   30	:mW< E   60	<fM}Kk   120	q=Vh"]0g   mV@5V
k5Fj" U   IL20L-35k0-A/GXX	Gx6%Z$2n   35 kPa	ts9wSx~[+   40	{ywwJ   100	Jv+w{"&   160
QXN_ ?E,g/   IL20M-03M0-A/GXX	6dV )pJd   3.0 MPa	sRA2O/yKCE   60	h<TZJCt   100	q\~ #g.}   140
0%dOi ko   IL20M-100k-A/GXX	`$S&:Q,   100 kPa	X6r0+D5AvB   60	"~^0   100	YO$D-   140
X;N?L%Pp   IL20M-250k-A/GXX	}Sbk qd5   250 kPa	XUA@f*   60	(D) KU9B>   100	5l 3PAG   140
^9:`D@Z+   IL20M-500k-A/GXX	L*tfYonq   500 kPa	U/^#nU.,   60	rpK&OR/   100	(u} /(Ux   140
uVCH<6Cp   IL20M-01M0-A/GXX	oV0T    1.0 MPa	]i$0s   60	BEvY&3%l   100	dN)8r   140
9`*Eeb>   IL20M-10M0-A/GXX	[Hx(a.,d   10.0 MPa	BZ1wE1t   200	wlJi_)!   250	ds9'k.   300
rR-[CT   IL20M-40M0-AXX	rZJJ\ , |   40.0 MPa	3Iv^   230	C2"^YRN,   290	94BH{9b5   350
P:4"~]}   High Stability Line STARe, Piezoresistivechips for pressure measurements of 60 mbar to 400 bar
]s AuL !   HS20V-06k0-A/G/D05	Sb/?<$>   6 kPa	iX]OF.:    60	uBx\xeI   100	b>OB}Is   140	N68$b#9Ry   mV@5V
f7~dn#<@   HS20V-10k0-A/G/D05	AX8~w(sv   10 kPa	kt2_WW[   60	FL^ _)`   100	gZ$ 8Y7   140
q qf`z,u   HS20L-35k0-A/G/DXX	W_`]7RO8   35 kPa	7,+eG">0   60	W 3tin3__   100	+ig%_QED[\   140
k773h`;   HS20L-100k-A/G/DXX	Vb`Vp(>AU   100 kPa	,r w4Lo   60	Hyy b0c^=   100	`xLsD}32   140
9f( X7kt   HS20M-250k-A/G/DXX	i *.Y   250 kPa	='o3<}   60	\mc0fY   100	f47]gtB-   140
B@&sG 5ES   HS20M-500k-A/G/DXX	iAu/t   500 kPa	b?i+nhqI   60	q5SPyfE[   100	4@   140
'6dVe 2V   HS20M-01M0-A/G/DXX	o:AfEoH"~   1.0 MPa	][$I~nRf   60	4=([v;fc   100	"#r)NYq`"|   140
+twoUn{#   HS20M-03M0-A/G/XX	aZ4EcQ@-$]   3.0 MPa	e Wux   60	Z v@nK%#J   100	q ,,   140
W7qh1}_%   HS20M-10M0-A/GXX	nnv|GnQST   10.0 MPa	o6[.$C   200	t>\sP    250	xak)YOLRV   300
X/~uF9a'<   HS20M-20M0-A08	+lx&$mr?   20.0 MPa	'E_~|C   60	'>"{yi-   100	XDemdMy$   140
k8w\d+!v   HS20M-40M0-A08	] 4 dl6T   40.0 MPa	faQmkO   60	m\`>N_4*9   100	)\akIA   140
FDz`U:8   Harsh Environmental Line, Piezoresistivechips for pressure measurements of 2 bar to 16 bar
R/hIXO   HE11C-200K-AXX	32YbBGDN!f   200 kPa	Tlw'05\{J   60	@j/2 $   100	_ox+5?>   140	FJ;I1~??   mV@5V
*jlIV$r_   HE11C-400K-AXX	?_NKyiu95   400 kPa	RuPnWx!   60	yajdRU   100	X;I9\Cp]!   140
9ddrtJ]   HE11C-800K-AXX	\R#SoOd   800 kPa	"?8)} "/f   60	za_b jE   100	}|DspO   140
ue_wuZi   HE11C-01M6-AXX	mJSfn"b}K   1.6 MPa	UkL1h7}a\   60	w' 7sh5   100	OIcXelS:@k   140

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