新势力光电供应压力传感器芯片

新势力光电供应压力传感器芯片，采用高级电阻传感技术（STARe, Sensor Technology for AdvancedResistors），特点：稳定性高、适用于恶劣环境，该系列压力传感器芯片应用：腐蚀性、流动性、油性环境下的高精密压力传感测量，包括：汽车制造、工业、医疗、大型家电。 Qv=Bq{N  
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EKJH_!%   Type	BDnBBbBrz   Pressure	A1 b6Zt   Min	~Gwas0eNa   Typ	WT1q15U(=   Max	<WgG=Kf)N   Unit
GMyoSe%1/   The Pressure sensor chips are based onthe STARe (Sensor Technology for Advanced Resistors)
ur`}v|ZY   Standard Line STARe, Piezoresistive chipsfor pressure measurements of 1 to 30 bar
81cv:|"   SL21K-100k-A/GXX	Z#[>N,P   100 kPa	+Hi{/{k0N   40	iiQ||P}5   70	W *|OOa'   130	W>VAbm   mV@5V
a6OrE*x:D   SL21K-250k-A/GXX	?WMi S]Q\   250 kPa	jCam,$oE   60	}% FDm@+   100	|)*m[_1   140
$o {F   SL21K-500k-A/GXX	FC~|&   500 kPa	WJBW:2=;   60	b^@`uDb6   100	M_|M&lR>   140
~rQ4n9G   SL21K-01M0-A/GXX	i:AjWC@]   1.0 MPa	nqUH6(   60	56VE[G   100	[%7IQ4`{   140
Z={UM/6w   SL21K-03M0-A/GXX	$Cut   3.0 MPa	.[]{  Q   60	|~Htj4K/   100	X*43!\   140
R4[. n@   Industrial Line STARe, Piezoresistivechips for pressure measurements of 100 mbar to 400 bar
F<H`8*q9   IL20L-10k0-GXX	bEEJVF0   10 kPa	cob9hj#&7   30	Z5{*? 2   60	I67k M{V   120	}:K\)Pd   mV@5V
N8u_=b{X   IL20L-35k0-A/GXX	e_;%F`   35 kPa	}39M_4a&   40	ghE?8&@ iq   100	4Xa.r6T_N=   160
9Ba|J"?Y k   IL20M-03M0-A/GXX	xP<H,og&x=   3.0 MPa	a @yE:HU   60	hqwz~Ky}   100	p P_wBX   140
Oi+Qy[y2   IL20M-100k-A/GXX	c"oQ/x   100 kPa	nvm1.}=Cnd   60	~2;&pZ$   100	ROlzs}   140
LRfFn^FPM   IL20M-250k-A/GXX	7%~VOB   250 kPa	n0 fF,?gm   60	[rD+8,zVm   100	$j$\ccG   140
P:bVcta9g   IL20M-500k-A/GXX	l7=$4As/hI   500 kPa	OsHkAI   60	u0(hVK`":   100	4#'^\5   140
YGZAtSf3z   IL20M-01M0-A/GXX	HfZ (U5~   1.0 MPa	TZ`]#^kU   60	&</@0   100	#lLn=' 4   140
JXRmu~W~l   IL20M-10M0-A/GXX	h}c6+@w&-   10.0 MPa	10QNV=yK7s   200	tCF0Ah   250	4)c"@Zf   300
SIyS.!k>   IL20M-40M0-AXX	&Pn%zfmMN   40.0 MPa	,<Do ^HB/   230	m+G0<E%   290	4G68WBT   350
AQ_#uxI'oa   High Stability Line STARe, Piezoresistivechips for pressure measurements of 60 mbar to 400 bar
]#WX|0''^   HS20V-06k0-A/G/D05	^.><t+tM   6 kPa	7lBQd(   60	ttJ:[ R'   100	d/-0B<ts   140	FB^dp}   mV@5V
6A{s%v H   HS20V-10k0-A/G/D05	jv?aB    10 kPa	JUUF^/J   60	^b/q|(Nu&   100	R}K5'`[%ZY   140
*+1"S ]YF   HS20L-35k0-A/G/DXX	6iAc@   35 kPa	lk *QV   60	Ltq*Vcl\   100	bvxxE/?Ni   140
$=6kh+n@   HS20L-100k-A/G/DXX	30T:* I|   100 kPa	@,f,tk=\S   60	jP{]LJ2.6\   100	e]L3=R;   140
pC?1gc1G   HS20M-250k-A/G/DXX	p|O-I&Xd   250 kPa	CI3_lWax%   60	JOoLHZQ1v   100	.ubbNp_LU   140
/%@ RO^P   HS20M-500k-A/G/DXX	]Rys=.!   500 kPa	:_b =Km<   60	L"zgBB?K6   100	D;;o   140
oXZ@*    HS20M-01M0-A/G/DXX	'-1jWw:8   1.0 MPa	2K7:gd8Ru   60	}5c'ui!3H   100	J&0wl]w|O%   140
m{=~|I   HS20M-03M0-A/G/XX	nr9#3Lb   3.0 MPa	YH'.Yj2   60	1)kl   100	jwE(]u   140
Ph!NYi,   HS20M-10M0-A/GXX	%X-&yGY   10.0 MPa	E/Gs',Y   200	3@WI*PMc   250	."@a1_F|   300
wQ/@+ $>   HS20M-20M0-A08	d'@H@   20.0 MPa	|$*9j""u   60	p]IhQnj2   100	@42lpreT   140
'MM~~:   HS20M-40M0-A08	#z54/T   40.0 MPa	FO)nW:8]   60	Svp Ts   100	2|H'j~   140
q8yJW-GA    Harsh Environmental Line, Piezoresistivechips for pressure measurements of 2 bar to 16 bar
|Btx&'m   HE11C-200K-AXX	nhaoh!8A6   200 kPa	O%h 97^%k   60	$ax%K?MBD   100	cLk+( dn   140	RBojT    mV@5V
sn-+F% [   HE11C-400K-AXX	(Y@|h%1W   400 kPa	G5@fqh6ws   60	N#-\JlJ)   100	)ZT0zIG   140
N`GwL aF   HE11C-800K-AXX	vT<wd #   800 kPa	4]Nr$FY   60	zpQ/E   100	MvwJ(3   140
[#h!3d|?B   HE11C-01M6-AXX	H {Wpf9_ K   1.6 MPa	42[:s:   60	@<{#v.T   100	&ZFAUE,[   140

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