新势力光电供应压力传感器芯片

新势力光电供应压力传感器芯片，采用高级电阻传感技术（STARe, Sensor Technology for AdvancedResistors），特点：稳定性高、适用于恶劣环境，该系列压力传感器芯片应用：腐蚀性、流动性、油性环境下的高精密压力传感测量，包括：汽车制造、工业、医疗、大型家电。 HvVS<Ke  
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k7Z1Y!n7   Type	ZnYoh/   Pressure	8a 4&} ^|   Min	|G]M"3^   Typ	[ 6t!}q   Max	rN^P//   Unit
~,.}@XlgT.   The Pressure sensor chips are based onthe STARe (Sensor Technology for Advanced Resistors)
r6eApKZ>f6   Standard Line STARe, Piezoresistive chipsfor pressure measurements of 1 to 30 bar
9gokTFoN   SL21K-100k-A/GXX	Arb-,[kwN   100 kPa	c 7uryL   40	F45UO% /P   70	u0& dDZ   130	/?P="j#u   mV@5V
V|8`]QW@   SL21K-250k-A/GXX	GT"gB$Mh   250 kPa	(Q09$   60	.)eX(2j\   100	j;']L}R   140
<+c6CM$#}V   SL21K-500k-A/GXX	:X6A9jmd   500 kPa	f}>S"fFI   60	^g56:j~?   100	;ywQk| r   140
 PjkJsH   SL21K-01M0-A/GXX	&<sN(;%0R   1.0 MPa	\;G97o   60	&t\KKsUtd   100	M _ z-~G   140
a_0G4@=T   SL21K-03M0-A/GXX	{~ngI<   3.0 MPa	 !m X 2   60	"sf]I[a   100	{6yiD   140
\;>idbV   Industrial Line STARe, Piezoresistivechips for pressure measurements of 100 mbar to 400 bar
'nM)=   IL20L-10k0-GXX	EI29;   10 kPa	[=Yfdh M8S   30	0#mu[O   60	G*|2qX"o   120	`8 Dgk}   mV@5V
{AY`\G   IL20L-35k0-A/GXX	n2+eC9I   35 kPa	y8KJoVPiM   40	Iz#h:O   100	c!BiGw,;   160
5[|MO.CB$   IL20M-03M0-A/GXX	U9KnW]O%"   3.0 MPa	5"[Qs|VjA6   60	Z=Oo%lM6B   100	46dh@&U   140
Z;_WU   IL20M-100k-A/GXX	/EOtK|E   100 kPa	;!k1LfN   60	uL!{xuN   100	:LL>C)(f   140
he/UvMu   IL20M-250k-A/GXX	S)[`Bm   250 kPa	a"{tqNc   60	sYt8NsQ   100	@^vVou_   140
?.:C+*+   IL20M-500k-A/GXX	3`&2-   500 kPa	R0M(e@H~   60	_AQ :<0/#   100	l|fOi A*K   140
:_tsS)Q2m   IL20M-01M0-A/GXX	5vL]Y)l   1.0 MPa	{O 6f1LuH   60	"YGs<)S   100	&Q^M[X   140
N"b>]Ab] ;   IL20M-10M0-A/GXX	bgd1j,PWbW   10.0 MPa	d;ElqRC&   200	 V&DS+'P   250	S)GWr"m-   300
aIk%$Mat   IL20M-40M0-AXX	laqW {sX^5   40.0 MPa	+EcN[-~   230	(i7]N[   290	N`/6 By   350
6tM CpSJ   High Stability Line STARe, Piezoresistivechips for pressure measurements of 60 mbar to 400 bar
u|\Lb2Kb:   HS20V-06k0-A/G/D05	m5sgcxt/   6 kPa	EpeTfD   60	j]6j!.1   100	pd,5.d   140	R\+p`n$   mV@5V
<UG}P \N   HS20V-10k0-A/G/D05	2_0OSbFv'P   10 kPa	z@$7T:H>   60	\{n]&IjA   100	)5Kzq6.   140
B5!$5Qc   HS20L-35k0-A/G/DXX	A%u-6"   35 kPa	<?,o {   60	AMvM H   100	}@}jwi)l   140
@q2Yka   HS20L-100k-A/G/DXX	V$-IRdb   100 kPa	VVvV]rU~   60	G6Z2[Ej1   100	7[:9vY   140
K3TMTY<p   HS20M-250k-A/G/DXX	DVRE;+Jt   250 kPa	b3x!tuQn   60	cxrUk$f   100	yuk64o2QE   140
PV>-"2n   HS20M-500k-A/G/DXX	) ]U-7   500 kPa	/_?Ly$>'   60	bQb>S<PT   100	wCvtw[6   140
{Os$Uui37\   HS20M-01M0-A/G/DXX	$)mE"4FE   1.0 MPa	mTW0_!.   60	BM1uZJ0   100	Sq}hx   140
g%#" 5Kr   HS20M-03M0-A/G/XX	xRJv_=dT   3.0 MPa	Txfu%'2)e   60	WtFv"$V   100	"MKgU[t   140
q/?#+d   HS20M-10M0-A/GXX	;4Y@xS2M   10.0 MPa	`pE~M05   200	D(s[=$zua   250	8k]'P*9ulz   300
N0sf V   HS20M-20M0-A08	%:N6#;l M   20.0 MPa	x;l\#x/<   60	y|nMCkuX   100	1[a;2xA~   140
<jQ?l%\   HS20M-40M0-A08	j{IAZs#@>   40.0 MPa	ATv.3cy   60	ngcXS2S_   100	_LFZ0   140
/fWVgyW>6   Harsh Environmental Line, Piezoresistivechips for pressure measurements of 2 bar to 16 bar
=E8lpN'   HE11C-200K-AXX	c</d1xT   200 kPa	/);cl;"   60	B5IS-d   100	Ajr]&H4   140	DT8|2"H   mV@5V
f[HhLAVGK`   HE11C-400K-AXX	ync2X{9D   400 kPa	=K=FzV'_~   60	B9/x?Jv1   100	l!<Nw8+U   140
^TJ n&k   HE11C-800K-AXX	#qGfo)   800 kPa	G@oY2sM"   60	h-=3b   100	*T*=~Y4kE   140
@H"~/m_o   HE11C-01M6-AXX	aIpDf|~   1.6 MPa	E5UI   60	o>WH;EBL   100	**d3uc4y   140

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