新势力光电供应压力传感器芯片

新势力光电供应压力传感器芯片，采用高级电阻传感技术（STARe, Sensor Technology for AdvancedResistors），特点：稳定性高、适用于恶劣环境，该系列压力传感器芯片应用：腐蚀性、流动性、油性环境下的高精密压力传感测量，包括：汽车制造、工业、医疗、大型家电。 4KX\'K  
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bOolBKV   Type	9vckQCLM   Pressure	P:>]a$Is   Min	L.s$|%   Typ	Js<DVe,   Max	`F$lO2#k   Unit
R $@$   The Pressure sensor chips are based onthe STARe (Sensor Technology for Advanced Resistors)
z5J$".O`   Standard Line STARe, Piezoresistive chipsfor pressure measurements of 1 to 30 bar
@R_ON"h   SL21K-100k-A/GXX	"s.hO0Z   100 kPa	+O)Y7k{?C5   40	(DkfLadB   70	!C@+CZXLx   130	mpNS}n6   mV@5V
*zwo="WA\t   SL21K-250k-A/GXX	W1&"dT@   250 kPa	6~-,. {Y   60	#}lWM%9Dy   100	h0?w V5H   140
+!K*FU=).   SL21K-500k-A/GXX	-%dBZW\u2   500 kPa	d"tR?j   60	YrsE 88QqI   100	qfX26<q   140
"r~/E|Da<   SL21K-01M0-A/GXX	^X-6j[".   1.0 MPa	@R Jr ~y0   60	Z7NR%u_|[   100	_3IRj=Cs   140
SZUo RWx   SL21K-03M0-A/GXX	z%1& t4$   3.0 MPa	4t-l@zFWb   60	1H?I?IT30   100	M0T z('~s   140
{rwT 4]4   Industrial Line STARe, Piezoresistivechips for pressure measurements of 100 mbar to 400 bar
Qff.QI,   IL20L-10k0-GXX	";;!c.!^   10 kPa	- ykD/   30	4y.qtiIP>$   60	S0tkqA4   120	uu.}<VM.1   mV@5V
Q_Wg4n5   IL20L-35k0-A/GXX	1ASoH,D/   35 kPa	[C\B2iU7_M   40	(*_lLM@Cd   100	tAPf#7{|    160
^H -a@QM   IL20M-03M0-A/GXX	phQ{<wzwp   3.0 MPa	oQA,57B   60	EywBT   100	J0imWluhQ   140
>?#zPweA   IL20M-100k-A/GXX	K)  Ums-b   100 kPa	A+ j!VM    60	E3] 8(P%D-   100	xS:n   140
gWL`J=DiU   IL20M-250k-A/GXX	!zsrORF{   250 kPa	FB:nkUR`   60	U^eos;:s8   100	|+KwyHE`9   140
s7sTY    IL20M-500k-A/GXX	@t;726   500 kPa	2liJ^ `   60	2C1NDrS;}   100	vvu $8n   140
*<[zG7+&[   IL20M-01M0-A/GXX	z4~p(tl   1.0 MPa	Y;'SD{On   60	WEJ-K<A(   100	'F#dv[N   140
l|{[vZpT   IL20M-10M0-A/GXX	X7[gfKGL)N   10.0 MPa	LlS~J K   200	)\j dF-s   250	k]^ya?O]p   300
.wmqaLd%   IL20M-40M0-AXX	`/?'^A%Ik   40.0 MPa	C,A/29R,s   230	zWv0y8[d   290	a4gX@&it_k   350
?20R\ ]U   High Stability Line STARe, Piezoresistivechips for pressure measurements of 60 mbar to 400 bar
G ')zDx   HS20V-06k0-A/G/D05	bdY:-8!3   6 kPa	I!Z"X&   60	74a@/'WbE   100	nM Z)x-   140	z[ 'G"yCi   mV@5V
=R~zD4{"   HS20V-10k0-A/G/D05	,QpFVlPU   10 kPa	YaL:6[6   60	5@-H8*   100	Y9>92#aME   140
a L`wz !   HS20L-35k0-A/G/DXX	`uUzBV.FR   35 kPa	3kk^hvB+f   60	"wuO[c&%/   100	l^OflZC~   140
_Gf-s51s   HS20L-100k-A/G/DXX	W&:0J   100 kPa	\gB~0@[\7   60	oP9 y@U   100	dq`{fqGl   140
|q8N$m   HS20M-250k-A/G/DXX	]@ke_' "   250 kPa	l)dE7$H   60	\D(3~y>   100	UAT\ .   140
Je6w io-4   HS20M-500k-A/G/DXX	 oC*a;o   500 kPa	|Tc4a4jS   60	'"\'<>Be   100	6_])(F3+w.   140
w$AR   HS20M-01M0-A/G/DXX	R ZQH#+*t}   1.0 MPa	-egnMc67   60	]K*R[   100	'j<u0'K@   140
ZQ+DAX*MS   HS20M-03M0-A/G/XX	7=9>yba)^   3.0 MPa	zfv@<'   60	9#@s(s   100	FRZ]E)9Z]b   140
w5{l-Z   HS20M-10M0-A/GXX	pCrm `hy(   10.0 MPa	*jbPy?%oY   200	:;yrYAyT3   250	o2U5irU   300
!cYID \}S,   HS20M-20M0-A08	rU&Y/   20.0 MPa	_1qR1<V   60	-` ViuDX=   100	8K ?}!$fz   140
Xi) ;dcNJ   HS20M-40M0-A08	Wp8>Gfb2   40.0 MPa	;"x+V gS'   60	g.@[mf0r   100	`Ucj_6&Tqs   140
H~nX!sO   Harsh Environmental Line, Piezoresistivechips for pressure measurements of 2 bar to 16 bar
05T?c{ ;   HE11C-200K-AXX	VGD~) z57   200 kPa	p|2GPrA]aL   60	2O Ur">_   100	1x;@BV   140	\ *[Ht!y   mV@5V
R$hIgw+p[   HE11C-400K-AXX	(,#m+   400 kPa	/go[}X5QR[   60	!zF07.(E   100	9QXsbd6   140
X5[vQ3^   HE11C-800K-AXX	4Ii5V c   800 kPa	P>iZgv   60	O5-GrR^yt   100	5(J?C-Pk   140
452kE@=49   HE11C-01M6-AXX	QrK%DN   1.6 MPa	%p )"_q!ge   60	H Eq{TUTr   100	pXO09L/nv   140

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