新势力光电供应雪崩二极管

发布：newopto 2014-11-13 11:40 阅读：1793
新势力光电供应雪崩二极管（APD，Avalanchephotodiodes），是一种内部增益机制的光电二极管：蓝光增强型、红光增强型、红外增强型（900nm、1064nm）。该系列雪崩二极管应用广泛，包括：安检设备、激光测距、运动控制、分析仪器、生物医疗、光通信、军事、航空航天、光通讯。备注：如果采购数量10片以上，新势力光电提供配套的驱动电路模块。 >|c?ZqW  
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Series 11: Blue sensitivity enhanced (forbiomedical applications)
Pro?xY$E)  
Order #		 ;<q 2  
Type		 78{9@\e"0  
Active Area		 ii_kgqT^  
Dark Current		 ?QmtZG.$  
Rise Time
(c)=Do=  
Chip		 !(7m/R  
Package		 ^8EW/$k  
Size		 `u}_O(A1pA  
Area		 $m)gfI]9  
M=100		 aXQS0>G%(  
410nm 50Ω
ZM})l9_o"  
mm		 U+*l!"O,  
mm2		 nhdZC@~E0  
nA		 D h;5hu2"  
ns
NuPlrCy;  
500970		 /6Q]f  
AD800-11		 nKzm.D gt_  
TO52S1		 41Z@_J|&  
Ø0.8		 Cyd/HTNh<  
0.5		 bJetqF6 n  
1		 :P}3cl_  
1
Gn=b_!  
500967		 |,p"<a!+{w  
AD1900-11		 {=3A@/vM  
TO5i		 Ij7P-5=<  
Ø1.95		 g kO^J{_@q  
3		 cFw-JM<  
5		 >STthPO  
2
EP#2it]0]  
Series 12: Red sensitivity enhanced(cut-off frequency up to 3 GHz)
)-_^vB  
Order #		 #<< el;n  
Type		 { 7jim  
Active Area		 O_8 SlW0e  
Dark Current		 x)*Lu">  
Rise Time
aSvv(iV  
Chip		 Nna.NU1  
Package		 0t? o6 e  
Size		 o *J*} y  
Area		 &Gh0f"?  
660nm M=100		 LWv<mtuYf  
660nm 50Ω
-$W1wb9z  
mm		 Tk?uJIS :  
mm2		 &'$Bk5D@G  
A/W		 /Ne#{*z)hO  
GHz
>2znn&g Z  
501828		 =}#yi<Lt  
AD100-12		 salC4z3  
LCC6.1		 YK)m6zW5  
Ø0.1		 B^/MwD>%  
0.008		 vSR&>Q%X  
50		 w2.] 3QAZ  
typ.3, min.2
U;#KFZ+~  
501829		 3/`BK{  
AD100-12		 ^AH[]sE_  
LCC6.1f		 5P\>$N1p  
Ø0.1		 ]0."{^ksL  
0.008		 FL' }~il  
44		 ot<d FvD  
typ.3, min.2
AOZ C D{  
501831		 3_)I&RM  
AD100-12		 QcL@3QC  
TO52S1		 RG{T\9]n  
Ø0.1		 YbU8 xq  
0.008		 (U.Go/A#wE  
50		 ?Z 2,?G  
typ.3, min.2
QFx3N%  
501157		 kw$ 7G1Q  
AD230-12		 gS~H1Ro  
LCC6.1		 &`I(QY  
Ø0.23		 \:4*h  
0.042		 k`m7j[A]l  
50		 %3a-@!|1<  
typ.3, min.2
{!|4JquE_  
501156		 X%'z  
AD230-12		 !:|*!  
LCC6.1f		 }n==^2  
Ø0.23		 !G3AD3  
0.042		 mLuNl^)3  
44		 J#..xJ?XRD  
typ.3, min.2
2|>\A.I|=  
501820		 >}V?GK36  
AD230-12		 !"F;wg$  
LCC6.1f		 lAU99(GXV  
Ø0.23		 +]%S}<R  
0.042		 KrpIH6  
44		 XYo,5-  
typ.3, min.2
5*$yY-A  
501162		 xG/Q%A  
AD230-12		 p/<DR |  
TO52S1		 n4k q=Z%  
Ø0.23		 M- ^I!C  
0.042		 &'z_:Wm  
50		 zTg\\z;  
typ.3, min.2
AT"gRCU$4  
501155		 3s%?)z  
AD500-12		 yNns6  
LCC6.1		 Ks%0!X?3q  
Ø0.5		 dTg`z,^F  
0.196		 % Ln`c.C  
50		 {U=J>#@G  
typ.3, min.2
%l7[eZ{Y  
501154		 DC8#b`j  
AD500-12		 8zx]/ >  
LCC6.1f		 cT'Bp)a  
Ø0.5		 (GmBv  
0.196		 OMLU ;,4  
44		 Cb;6yE)!Z  
typ.3, min.2
z)3TB&;  
501819		 XZ%,h  
AD500-12		 [Fr](&Tx  
LCC6.1f		 |owr?tC  
Ø0.5		 !vwio!  
0.196		 *?X&Y8Kf  
44		 Q>{$Aqc,e  
typ.3, min.2
[{7#IZL  
501163		 y*iZ;Bv j  
AD500-12		 nONuw;K  
TO52S1		 yLC[-.H  
Ø0.5		 K3!3[dR*  
0.196		 y74Q(  
50		 bB_LL  
typ.3, min.2
Pm/<^z%  
Series 8: Optimized for high cut-offfrequencies-850 nm (optimized for high speeds)
_KH91$iW8m  
Order #		  vywB{%p  
Type		 s/"bH3Ob9v  
Active Area		 +KTfGwKt  
Dark Current		 G8M~}I/)  
Rise Time
w5m /[Z  
Chip		 cu/"=]D  
Package		 DsHF9Mn  
Size		 x4q}xwH  
Area		 P =X]'m_B  
M=100		 tRoSq;VrS  
M=100 20V 50Ω
d {!P c<  
mm		 KR?;7*qF  
mm2		 eGEwXza 4  
nA		 `yfZ{<  
ns
2b$>1O&2  
501810		 ,XT,t[w  
AD100-8		 JQM_96\  
LCC6.1		 %ztZ#h~g  
Ø0.1		 e/D{^*~S  
0.008		 B[uyr)$  
0.05		 OWvblEBF  
<0.18
^OY$ W  
501811		 ~}_^$l8#-Q  
AD100-8		 HJl?@& l/  
LCC6.1f		 1mmL`M1  
Ø0.1		  kORWj<  
0.008		 @8W@I|  
0.05		 wiN0|h>,  
<0.18
lD0p=`.  
501812		 (@^9oN~}  
AD100-8		 e1Db +QBV  
LCC6.1f		 a OmG,+o  
Ø0.1		 JT 7WZc)  
0.008		 ? $B4'wc5  
0.05		 0C<\m\|~k  
<0.18
_`?0w#> 0  
500011		 ko}& X=  
AD100-8		 Z 8w\[AF{$  
TO52S1		 q2%cLbI F  
Ø0.1		 q-z1ElrN7u  
0.008		 V>Jr4z  
0.05		 IUOf/mM5  
<0.18
2* g2UP  
501171		 S|=)^$:  
AD100-8		 b~^'P   
TO52S3		 .BP d06y  
Ø0.1		 K28L(4)  
0.008		 V[.{cY ?6  
0.05		 w[z=x  
<0.18
"(mJupI  
501078		 .<t{saToU  
AD230-8		 q[Ai^79  
LCC6.1		 +C`!4v\n  
Ø0.23		 ~ikp'5  
0.04		 nYtkTP!J6  
0.3		 phDIUhL$z  
0.18
b()8l'x_|K  
501079		 J^"_H:1[  
AD230-8		 |)7K(R)(=  
LCC6.1f		 EP38Ho=[  
Ø0.23		 KF7w{A){  
0.04		 j)@W1I]2#  
0.3		 _h1bVd-  
0.18
R6<'J?k  
501805		 8ve-g\C8 H  
AD230-8		 $PM r)U  
LCC6.1f		 e,s  S.  
Ø0.23		 JlSqTfA  
0.04		 :Ou~?q%X  
0.3		 S*Ea" vBA  
0.18
6O/L~Z*t  
500019		 cs2-jbRn  
AD230-8		 `6rLd>=R  
TO52S1		 7O)ATb#up  
Ø0.23		 ~ T}D#}  
0.04		 #Shy^58$  
0.3		 \B')2phE  
0.18
g(P7CX+y  
500022		 *l d)nH{  
AD230-8		 W<<G  'Km  
TO52S3		 U,b80%k:  
Ø0.23		 ywm"{ U? 8  
0.04		 UL ew ~j  
0.3		 ,GWa3.&.d  
0.18
A#$l;M.3R  
501496		 gB#!g@  
AD230-8		  mTH[*Y,  
ODFN2x2		 >%"TrAt  
Ø0.23		 0uKm)t/  
0.04		 i8<5|du&?  
0.3		 |%4nU#GoB  
0.18
+ o< 7*  
501077		 .dzw5R&  
AD500-8		 tqA-X[^  
LCC6.1		 fwtsr>SV  
Ø0.5		 R]od/u/$  
0.2		 +4t \j<T  
0.5		 wB8548C}-  
0.35
VIWH~UR)&!  
501076		 CEk [&39"  
AD500-8		 #d8]cm=  
LCC6.1f		 ;Qd'G7+  
Ø0.5		 Q]/g=Nn ^~  
0.2		 _u-tRHh|A  
0.5		 j.Y!E<e4]  
0.35
gd3MP^O1  
501809		 @ &c@  
AD500-8		 \U]<HEc^  
LCC6.1f		 M|{KQ3q:9  
Ø0.5		 7TX$  
0.2		 #\~m}O,  
0.5		 ;|rFP  
0.35
Uwiy@ T Z  
500030		 U&kdR+dB  
AD500-8		 *[nS*D\:  
TO52S1		 cL %eP.  
Ø0.5		 -}qay@cDt  
0.2		  mznE Cy  
0.5		 9MRe?  
0.35
/\jRr7 Cd  
500305		 =aT8=ihP  
AD500-8		 How:_ Hj  
TO52S2		 Qe[ai?iJkt  
Ø0.5		 1g!%ej jd  
0.2		 :)_P7k`>e/  
0.5		 NnZ_x>R  
0.35
1 xrmmK  
500155		 pv|D{39Hs  
AD500-8		 ZCuh^  
TO52S3		 (>D{"}  
Ø0.5		 aj+I+r"~  
0.2		 &)Wm rF  
0.5		 5tb i};  
0.35
'vIVsv<p  
500947		 >GDN~'}^oz  
AD800-8		 "'8o8g  
TO52S1		 z81`Lhg6  
Ø0.8		 {7Ez7'SVV  
0.5		 /i~n**HeF?  
2		 5geZ6]|  
0.7
j|% C?N  
501117		 d~d~Cd`V  
AD1100-8		 @n=FSn6 c  
TO52S1		 /Bnh%6#ab  
Ø1.13		 vw q Y;7  
1		 `_e1LEH  
4-6		 9%Ftln6  
1
-/qu."9(B  
500015		 \h/aD1 &g  
AD1900-8		 g60r m1b  
TO5i		 _1Iw"K49Qx  
Ø1.95		 0j~C6 vp  
3		 wvSaq+N  
15		 s2+s1%^Ll  
1.4
ab5z&7Re6  
501194		 XAr YmO  
AD3000-8		 0jwex  
TO5i		 t5za$kW'&  
Ø3		 ~|)'vK8W  
7.07		 +l$BUX  
30		 |a {*r.  
2
j.rJfbE|X  
500160		 Zz04Pz1  
AD5000-8		 aq,?  
TO8i		 )![? JXf  
Ø5		 aV8]?E5G  
19.63		 '.DFyHsq  
60		 aTY\mKk  
3
ygp NMq#?X  
500002		 tm}0kWx  
AD230-8-2.3G		 -z4pI=  
TO5		 rOy-6og  
AD230-8-2.3GTO5 is a high frequency optical data receiver comprising an Avalanche SiliconPhotodiode and a transimpedance amplifier in a hermetically sealed TO5package.
d1>Nn!m  
500003		 2V#(1Hc!  
AD500-8-1.3G		 o;@T6-VH  
TO5		 @ (A[H^E  
AD500-8-1.3GTO5 is a high frequency optical data receiver comprising an Avalanche SiliconPhotodiode and a transimpedance amplifier in a hermetically sealed TO5package.
`=3:*.T*  
Series 9: NIR sensitivity enhanced-900nm(specifically for LIDAR and laser rangefinders)
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Order #		 Nu'T0LPNq(  
Type		 $McVK>=  
Active Area		 VS\~t  
Dark Current		 t/aT  
Rise Time
<Cw)S8t  
Chip		 $/Q*@4t  
Package		 Xj<B!Wn*Xb  
Size		 l;SqjkN  
Area		 uN1O(s  
M=100		 v9OK <  
M=100
x-/`c  
mm		 %9A6c(L  
mm2		 !7lS=D(?  
nA		 .5zqpm  
ns
E(oI0*S.5  
501815		 X)|b_3Z  
AD100-9		 QuJ)WaJkC  
LCC6.1		 F\Gi;6a  
Ø0.1		 PSQ5/l?\>  
0.008		 Hinz6k6!  
0.1		 -Ug  
<0.5
/gKX%`ZF/r  
501816		 jR#g>MDKB  
AD100-9		 {(#>%f+|C  
LCC6.1f		 q(J3fjY)  
Ø0.1		 8`*Wl;9u  
0.008		 c?{&=,u2  
0.1		 H1>}E5^?  
<0.5
Ii /#cdgF  
501123		 VSCOuNSc  
AD230-9		 ^xO CT=V  
LCC6.1		 wTGH5}QZ+  
Ø0.23		 &oTUj'$  
0.04		 %W=S*"e-  
0.5		 !52]'yub  
0.5
>v9 ("  
501817		 1O0o18'  
AD230-9		 ~1Q$FgLk  
LCC6.1f		 t%wC~1  
Ø0.23		 SXn1v.6  
0.04		 PYYOC"$  
0.5		 _ a|zvH  
0.5
t/\J  
500020		 C{<qc,!4  
AD230-9		 C&b^TLe  
TO52S1		 MMglo3  
Ø0.23		 yT<yy>J9l#  
0.04		 vlAYKtl3]  
0.5		 VQO6!ToKY  
0.5
#`rvL6W q}  
501265		 TpLlbsd  
AD230-9		 ^<#08L;  
TO52S1F2		 7yLO<o?9w  
Ø0.23		 8S[`(] )  
0.04		 "If]qX(w  
0.5		 ({g7{tUy^H  
0.5
Q=[A P+  
500023		 8*;88vW"2  
AD230-9		 TOp|Qtn  
TO52S3		 E`3yf9"  
Ø0.23		 mdW8RsR  
0.04		 h\ema|  
0.5		 @bQf =N+  
0.5
A\9Q gM  
501122		 8|uFW7Q  
AD500-9		 8_6\>hW&  
LCC6.1		 s)ymm7?  
Ø0.5		 =^m,|j|d>4  
0.2		 c0.i  
0.8		 01VEz 8[\  
0.55
Mvq5s+.  
501818		 ^| L@f  
AD500-9		 (5y+g?9d;  
LCC6.1f		 *6 oQW  
Ø0.5		 3A'vq2beM  
0.2		 ,*SoV~  
0.8		 _Gv[ D  
0.55
bLyU;  
500031		 hm"i\JZ3N  
AD500-9		 }=CL/JHz  
TO52S1		 T >X nVK  
Ø0.5		 @Omgk=6  
0.2		 C 7)w8y  
0.8		 M}|<# i7u  
0.55
@~v |t{G  
500590		 t{n|!T&  
AD500-9		 ##~";j  
TO52S1F2		 cs[_5r&:  
Ø0.5		 >h+[#3vD  
0.2		 &eYnO~$!  
0.8		 >CtT_yhx  
0.55
TxL;qZRY ^  
500306		 bjvpYZC\5  
AD500-9		 7p'L(dq  
TO52S2		 $xRZU9+  
Ø0.5		 [\(}dnj:  
0.2		 es}j6A1  
0.8		 #-b0U[,.  
0.55
>\=~2>FCD  
500156		 =\;yxl  
AD500-9		 oG5 :]/F  
TO52S3		 d1YE$   
Ø0.5		 _&!%yW@  
0.2		 $2u^z=`b!%  
0.8		 #jdo54-  
0.55
"/ G^+u  
501196		 ^fVLM>p<;  
AD800-9		 z8W@N8IqC  
TO52S1		 LgN\%5f-  
Ø0.8		 (#6E{@eq  
0.5		 m/W0vPM 1  
2		 :2#8\7IU^'  
0.9
xlQl1lOX  
501197		 t Dx!m~[  
AD1100-9		 )Ih '0>=  
TO52S1		 FwU*]wx|{  
Ø1.13		 'Oyx X  
1		 axT-  
4		 r?Y+TtF\e  
1.3
pAwmQS\W  
501208		 !FwR7`i  
AD1500-9		 4 j9  
TO5i		 %si5cc?  
Ø1.5		 2p3ep,  
1.77		 3fC|}<Wzt  
2		 dxm_AUM  
2
O&=40"Dr  
501198		 ;DWtCtD  
AD3000-9		 B/#tR^R  
TO5i		 5X^bvW26  
Ø3		 }q0lbwYlb  
7.07		 4}nsW}jCc  
30		 9d ZE#l!Q  
2
UO-<~DgH  
500161		 2q2;Uo`"S.  
AD5000-9		 W)rE_tw,|  
TO8i		 u@!iByVAg  
Ø5		 Mv9q-SIc[  
19.63		 G/tah@N[7  
60		  4{2)ZI#  
3
A/kRw'6  
500756		 d~[^D<5,D  
AD230-9-400M		 @D.]PZf  
TO5		 p)M\q fZ  
AD230-9-400M-TO5 is a high frequency optical data receivercomprising an Avalanche Silicon Photodiode and a transimpedance amplifier ina hermetically sealed TO-5 package.
**I9Nw!IH  
500490		 RfPRCIo  
AD500-9-400M		 xW84g08_,  
TO5		 {bF95Hs-  
AD500-9-400M-TO5 is a high frequency optical data receivercomprising an Avalanche Silicon Photodiode and a transimpedance amplifier ina hermetically sealed TO-5 package.
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Multi-Element Array
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501099		 [.e Y xZ{=  
8AA0.4-9		 |JVeW[C  
SOJ22GL		 @uc N|r}=R  
APD Array 8 Elements, QE>80% at760-910nm with NTC
|.D_[QI  
501098		 t >89( k  
16AA0.13-9		 7h?yAgDv~  
SOJ22GL		 (n{sp  
APD Array 16 Elements, QE>80% at760-910nm with NTC
\R& 4Nu2F  
500038		 "P:kZ= M Q  
16AA0.13-9		 G>hmVd  
DIL18		 5BKmp-m  
APD Array 16 Elements, QE>80% at760-910nm
@Yua%n6]#D  
501097		 G@Dw  
16AA0.4-9		 l 6.#s3I['  
SOJ22GL		 #UREFwSL  
APD Array 16 Elements, QE>80% at760-910nm
W'{q  
50130802		 H~~I6D{8  
25AA0.04-9		 rN|c0N  
BGA		 EXz5Rue LV  
APD Array 25 (5×5) elements, QE>80% at760-910nm with PTC
g;(r@>U.r  
50130802		 06bl$%  
25AA0.16-9		 fTi,S)F'  
BGA		 !M~p __  
APD Array 25 (5×5) elements, QE>80% at760-910nm with PTC
YWA:741  
50130702		 @URLFMFi  
64AA0.04-9		 ;K?fAspSH  
BGA		 w $7J)ngA9  
APD Array 64 (8×8) elements, QE>80% at760-910nm with PTC
an3HKfv  
501207		 zO>N3pMv  
QA4000-9		 ak50]KYo  
TO8Si		 l79jd%/m  
Quadrant Avalanche Photodiode, QE>80%at 760-910nm
9E _C u2B  
Series 10: NIR sensitivity enhanced -1064nm (specifically for laser rangefinders, targeting systems or anyapplications using YAG lasers or similar NIR radiation sources)
EmNB}\IYU  
Order #		 )>,b>7  
Type		 qR<  
Active Area		 iL1.R+  
Dark Current		 {+[~;ISL  
Rise Time
D%LM"p  
Chip		 ww"ihUX  
Package		 )61CrQiY  
Size		 zTY|Z@:  
Area		 {xt<`_R  
M=100		 XKp%7;  
M=100 1064nm
2]NP7Ee8 Z  
mm		 I=hgfo  
mm2		 ovCk :Vz  
nA		 Kq`Luf  
ns
7|6tH@4Ub  
500953		 B@*BcE?  
AD500-10		 < W,k$|w  
TO5i		 PKC``+K i  
Ø0.5		 ?{qw /&  
0.2		 TMG:fg&E~  
1.5		 bi!4I<E>k  
4
14\%2nE  
501233		 8{Y ?;~G  
AD800-10		 p)ta c*US  
TO5i		 &F\J%#{  
Ø0.8		 'xb|5_D  
0.5		 &+`l $h  
3		 ,?B.+4CW\E  
5
lGPC)Hu{`  
500883		 [RD ^@~x  
AD1500-10		 P0Na<)\'Y!  
TO5i		 <-Q0WP_^  
Ø1.5		 s~/]nz]"J  
1.77		 Kggf!\MR8  
7		 J+\F)k>r  
5
O)Nt"k7 b  
50123401		 2xe_Q70II  
AD4000-10		 YO!,m<b^u  
TO8Si		 /BT;Q)( &  
Ø4		 &t%CuU]/@  
12.56		 SX^fh.  
50		 dGIu0\J\$  
6
46_<v=YSJ  
501387		 w#F+rh3  
AD800-10		 ? z=>n  
TO8S		 yN3Tk}{V  
High speed, high gain, low noise, lowpower consumption hybrid (AD800-10+TIA)
Z(K[oUJx  
Multi-Element Array
$%r|V*5  
501174		 U_}$QW0'  
QA4000-10		 q'(WIv@  
TO8Si		 `8FC&%X_  
Quadrant Avalanche Photodiode, High QE at850-1070nm
GJO/']k  
6j"(/X|Ex5  
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