新势力光电供应雪崩二极管

发布：newopto 2014-11-13 11:40 阅读：1756
新势力光电供应雪崩二极管（APD，Avalanchephotodiodes），是一种内部增益机制的光电二极管：蓝光增强型、红光增强型、红外增强型（900nm、1064nm）。该系列雪崩二极管应用广泛，包括：安检设备、激光测距、运动控制、分析仪器、生物医疗、光通信、军事、航空航天、光通讯。备注：如果采购数量10片以上，新势力光电提供配套的驱动电路模块。 ^g`1SU`  
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Series 11: Blue sensitivity enhanced (forbiomedical applications)
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Order #		 $FEG0&  
Type		 :(EU\yCzK  
Active Area		 (9x8,f0z  
Dark Current		 p{7"a  
Rise Time
6dO )]  
Chip		 V2kNJwwk  
Package		 }0c  
Size		 6P;JF%{J  
Area		 4J*%$Vxv  
M=100		 jJ-j   
410nm 50Ω
4-efnB  
mm		 UX=JWb_uGm  
mm2		 4`uI)N(}*  
nA		 -?n|kSHX  
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A<.`HCv2  
500970		 Q}ho Y  
AD800-11		 ?}y?e}y*xZ  
TO52S1		 !=>pI/ECQ*  
Ø0.8		 \:C@L&3[  
0.5		 Qy |*[  
1		 +~RiCZt  
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500967		 C#X|U2$  
AD1900-11		 hh`7b,+ 4  
TO5i		 ,dK<2XP  
Ø1.95		 bY7d  
3		 =p|,~q&i  
5		 I$v* SeVHE  
2
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Series 12: Red sensitivity enhanced(cut-off frequency up to 3 GHz)
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Order #		 "1_eZ`  
Type		 !Q =H)\3  
Active Area		 " cx\P,<  
Dark Current		 rWEJCFa  
Rise Time
'"Q;54S**  
Chip		 s<LF=qGu  
Package		 U#R=y:O?  
Size		 k2muHKBlk  
Area		 <zH24[  
660nm M=100		 o7E?A  
660nm 50Ω
u-0-~TwD  
mm		 w$4fS  
mm2		 4v cUHa|4  
A/W		 _!kL7qJ"  
GHz
m[,! orq  
501828		 Y ## ftQ  
AD100-12		 Zo}wzY~x>I  
LCC6.1		 ,-#8/9ts  
Ø0.1		 }$r/#F/Fn  
0.008		 V9f$zjpw  
50		 B uV@w-|  
typ.3, min.2
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501829		 ,[ &@?  
AD100-12		 F Cg{!h  
LCC6.1f		 {b~l [  
Ø0.1		 IY2ca Xu  
0.008		 0L1NZY^!  
44		 uH S)  
typ.3, min.2
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501831		 aaW(S K  
AD100-12		 S,,,D+4  
TO52S1		 Xl^=&!S>me  
Ø0.1		 YNV4w{>FD  
0.008		 zI77#AUM  
50		 8%v1[W i  
typ.3, min.2
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501157		 &|'k)6Rx  
AD230-12		 [A99e`  
LCC6.1		 -E_lwK  
Ø0.23		 <hazrKUn  
0.042		 -:]_DbF  
50		 x TEDC,B  
typ.3, min.2
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501156		 [O92JT:li  
AD230-12		 #wn`choT'  
LCC6.1f		 HC4qP9Gs  
Ø0.23		 T@0\z1,~S  
0.042		 MBZ/Pzl~  
44		 #)hc^gIO&<  
typ.3, min.2
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501820		 J_) .Hd  
AD230-12		 * 0M[lR0t  
LCC6.1f		 8wJfG Y  
Ø0.23		 . Z 93S|q  
0.042		 <pzCpF<  
44		 . AJ(nJ)  
typ.3, min.2
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501162		 ;Gf,$dbWn  
AD230-12		 @ov*Fh  
TO52S1		 6Ap-J~4  
Ø0.23		 <49Gsm&0  
0.042		 (/6~*<ZGT  
50		 hfzmv~*  
typ.3, min.2
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501155		 ;la sk4|  
AD500-12		 Fo  K!JX*  
LCC6.1		 Ei@w*.3P<  
Ø0.5		 UbDRzum  
0.196		 7OSk0%Q,  
50		 t.0F  
typ.3, min.2
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501154		 dV_ClH &)  
AD500-12		 iKs @oHW  
LCC6.1f		 F\LAw#IJ  
Ø0.5		 prJ]u H,  
0.196		 xw[KP [(  
44		 Aun X[X9  
typ.3, min.2
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501819		 B{x`^3q R  
AD500-12		 oll J#i9  
LCC6.1f		 =v-qao7xCV  
Ø0.5		 =8`!Ph@(  
0.196		 e+`LtEve0  
44		 <]{$XcNm  
typ.3, min.2
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501163		 J3 Y-d7=|  
AD500-12		 e+'PRVc  
TO52S1		 _>:R]2Ew  
Ø0.5		 G3[X.%g`  
0.196		 'MF|(`  
50		 TU-aL  
typ.3, min.2
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Series 8: Optimized for high cut-offfrequencies-850 nm (optimized for high speeds)
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Order #		 hrT!S  
Type		 K'/,VALp  
Active Area		 o p{DPUO0  
Dark Current		 G&2UXr3  
Rise Time
B4uJT~,7>  
Chip		 `Mg&s*  
Package		 $9~6M*  
Size		 ;_bZH%o.  
Area		 SK6?;_  
M=100		 whoM$  &  
M=100 20V 50Ω
S9cAw5E(yN  
mm		 1$+-?:i C  
mm2		 $ G\IzK  
nA		 Vn7FbaO^  
ns
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501810		 9n\b!*x  
AD100-8		 sN"JVJXi  
LCC6.1		 ON.1'Wk?  
Ø0.1		 pgp@Zw)r)k  
0.008		 2cnyq$4k  
0.05		 zYCS K~-GW  
<0.18
S)n+E\c  
501811		 6ct'O**k*&  
AD100-8		 s|cL mL[  
LCC6.1f		 ygN4%-[XA  
Ø0.1		 w# iezo. 0  
0.008		 W`vgH/lSnZ  
0.05		 CC,f*I  
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501812		 2oO&8:`tv  
AD100-8		 <SPT2NyX  
LCC6.1f		 KscugX*x  
Ø0.1		 l- mt{2  
0.008		 $\9M6k'  
0.05		 Z<Rhn  
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500011		 ukInS:7  
AD100-8		 79yF {  
TO52S1		 ab@1JAgs  
Ø0.1		 H1fKe=$1  
0.008		 rFJPeK7  
0.05		 DwNEqHi  
<0.18
X+$IaLfCxD  
501171		 ^U8^P]{R|  
AD100-8		 -Uj3?W  
TO52S3		 8TE2q Pm  
Ø0.1		 xNAa,aMM  
0.008		 lx H3a :gm  
0.05		 UG,<\k&  
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501078		 N!Cy)HnS\w  
AD230-8		 @ )2<$d  
LCC6.1		 #Ave r]eK  
Ø0.23		 kp=wz0#  
0.04		 Z'cL"n\9R]  
0.3		 sWGc1jC?.F  
0.18
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501079		 (j%;)PTe+&  
AD230-8		 $:u5XJx  
LCC6.1f		 >S[NI<=8S  
Ø0.23		 mh :eUFe  
0.04		 SKdh!*G  
0.3		 M\!z='Fi  
0.18
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501805		 H\^zp5/  
AD230-8		 L Rn)  
LCC6.1f		 a j13cC$  
Ø0.23		 \-nbV#{  
0.04		 F4|U\,g  
0.3		 D"vl$BX  
0.18
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500019		 RbN# dI'  
AD230-8		 L >HyBB  
TO52S1		 tvEf-z  
Ø0.23		 YacLYo#  
0.04		 8;q2W F{AX  
0.3		 ELgq#z  
0.18
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500022		 ;UPI%DnE]  
AD230-8		 tEl_a~s*3?  
TO52S3		 EpdSsfDP  
Ø0.23		 Sft+Gb6  
0.04		 %7 [ Z/U=  
0.3		 2)^gd  
0.18
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501496		 t{g7 :A  
AD230-8		 eUZvJTE  
ODFN2x2		 |9x H9@^f  
Ø0.23		 0$1-5XY9  
0.04		 q-5U,!!W/  
0.3		 e)): U  
0.18
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501077		 vq;_x  
AD500-8		 g|V md  
LCC6.1		 IWs)n1D*]  
Ø0.5		 p)y'a+|7  
0.2		 ^R;rrn{^  
0.5		 x17K8De  
0.35
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501076		 )4CF*>*6V  
AD500-8		 $5v:z   
LCC6.1f		 ;($"_h  
Ø0.5		 bS"zp6Di  
0.2		 R0DWjN$j  
0.5		 p&Ev"xhs  
0.35
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501809		 4pG!m&4]ze  
AD500-8		 o@j)clf  
LCC6.1f		 $#LR4 [Fq  
Ø0.5		 S3F8Chk5  
0.2		 n7*.zI]%&  
0.5		 ML-?#jNa<  
0.35
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500030		 j c-$l  
AD500-8		 Im<(  
TO52S1		 {- Y.C*E  
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0.2		 VyWPg7}e  
0.5		 ,bnrVa(I  
0.35
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500305		 K! e51P  
AD500-8		 w</qUOx  
TO52S2		 [r f.&  
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0.2		 7'1 +i  
0.5		 lk`,s  
0.35
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500155		 6 ~LCj"  
AD500-8		 KV {J>J1  
TO52S3		 pxgVYr.  
Ø0.5		 O=2SDuBZ  
0.2		 m\xlSNW'q  
0.5		 &|&tPD/dJ  
0.35
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500947		 uE%$<o*#  
AD800-8		 w_hN2eYo&e  
TO52S1		 >Ndck2@  
Ø0.8		 ~]LkQQ'  
0.5		 %{*)-_M  
2		 | g[iK1  
0.7
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501117		 "2 "gTS  
AD1100-8		 ;.EW7`)Z  
TO52S1		 KYN{Dh]-}  
Ø1.13		 G,fh/E+  
1		 Rt=zqfJ  
4-6		 \Jy/ a-  
1
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500015		 jSc!"Trl]  
AD1900-8		 uW4wTAk;qh  
TO5i		 *s1^s;LR  
Ø1.95		 .m/$ku{/J  
3		 5N.-m;s  
15		 HJ^SqSm  
1.4
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501194		 6G0Y,B7&  
AD3000-8		 IVdM}"+  
TO5i		 o +KDK{MD  
Ø3		 t'{IE!_  
7.07		 SSo7 U  
30		 _'Rzu'$`  
2
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500160		 97 eEqI$#  
AD5000-8		 JVxGS{Z  
TO8i		 /|MHZ$Y9w?  
Ø5		 t]14bf$*Q  
19.63		  TG^?J`  
60		 7G]v(ay  
3
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500002		 x,81#=m^h  
AD230-8-2.3G		 nkTpUbS'f?  
TO5		 R!Lh ~~@{(  
AD230-8-2.3GTO5 is a high frequency optical data receiver comprising an Avalanche SiliconPhotodiode and a transimpedance amplifier in a hermetically sealed TO5package.
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500003		 b<bj5m4fz>  
AD500-8-1.3G		 %<]4]h  
TO5		 1O,:fTG<  
AD500-8-1.3GTO5 is a high frequency optical data receiver comprising an Avalanche SiliconPhotodiode and a transimpedance amplifier in a hermetically sealed TO5package.
/9@[gv A  
Series 9: NIR sensitivity enhanced-900nm(specifically for LIDAR and laser rangefinders)
w 8B SY  
Order #		 )Bw}T  
Type		 #X t|"Z  
Active Area		 }huFv*<@'  
Dark Current		 6 @A'N(I=O  
Rise Time
9,c_(%C  
Chip		 YM r2|VEU[  
Package		 #T3dfVWv  
Size		 xNOArb5e5  
Area		 slTE.  
M=100		 @i <vlHpl  
M=100
E*AI}:or;  
mm		 H ]z83:Z  
mm2		 L.?QZN%cN  
nA		 Lvd es.0|  
ns
<q.Q,_cW  
501815		 N@#,YnPI  
AD100-9		 `F`{s`E)  
LCC6.1		 oH='\M%+  
Ø0.1		 S7 !;Z@  
0.008		 (Cb;=:3G  
0.1		 H!P$p-*.  
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501816		 ).3riR  
AD100-9		 %zz,qs)Eu  
LCC6.1f		 aY-7K._</  
Ø0.1		 Y*/e;mG.  
0.008		 ")YD~ZA%)  
0.1		 fSF_O}kLp  
<0.5
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501123		 U8zCV*ag  
AD230-9		 ;-AC}jG  
LCC6.1		 9? y&/D5O  
Ø0.23		 i_(6} Y&  
0.04		 [\3W_jR  
0.5		 %uw7sGz\  
0.5
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501817		 0b G#'.-  
AD230-9		 R-YNg  
LCC6.1f		 N*+L'bO  
Ø0.23		 jwpahy;\WL  
0.04		 I(H9-!&  
0.5		 Lpohc4d[V  
0.5
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500020		 3i1TBhs6  
AD230-9		 2]]}Xvx4#  
TO52S1		 B$M4f7  
Ø0.23		 E7q,6f3@r  
0.04		 :%_h'9Qq  
0.5		 IIN,Da;hD  
0.5
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501265		 DwGRv:&HH  
AD230-9		 NvC @  
TO52S1F2		 1 -$+@Xl  
Ø0.23		 D#P]tt.Z   
0.04		 G.r .Z0  
0.5		 Y-lwS-Ii  
0.5
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500023		 `A9fanh  
AD230-9		 g/(BV7V  
TO52S3		 <0;G4fE7[H  
Ø0.23		 # [ +n(  
0.04		 znDpg{U(  
0.5		 &dPUd ~&EL  
0.5
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501122		 y|=KrvMHJ  
AD500-9		 Xvk+1:D  
LCC6.1		 J:J/AgJuH  
Ø0.5		 ^q`RaX)  
0.2		 6VS_L@  
0.8		 S=W^iA6>  
0.55
6q8PLyIp  
501818		 v}id/brl  
AD500-9		 f|ERZN`uB  
LCC6.1f		 @-Y,9mM   
Ø0.5		  [aG   
0.2		 }u1h6rd `  
0.8		 )?I*zc  
0.55
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500031		 =f23lA  
AD500-9		 : sw@1  
TO52S1		 <EdNF&S-  
Ø0.5		 f]mVM(XZN  
0.2		 9-vQn/O^D  
0.8		 =Ot_P7'5gv  
0.55
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500590		 6$kh5$[  
AD500-9		 2G<XA  
TO52S1F2		 tv Zq):c  
Ø0.5		 .;S1HOHz4  
0.2		 2Q7X"ek~[  
0.8		 p$ETAvD  
0.55
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500306		 O OXP1L  
AD500-9		 vR>GE? s6  
TO52S2		 u.*}'C>^^v  
Ø0.5		 Ck>]+rl  
0.2		 OT$++cj^  
0.8		 W`P>vK@=  
0.55
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500156		 :Rnwyj])  
AD500-9		 "c?31$6  
TO52S3		 gIIF17|Z  
Ø0.5		 /1D.Ud^  
0.2		 (i?9/8I  
0.8		 1~},}S]id  
0.55
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501196		 _ b</ ::Tp  
AD800-9		 ]=]MJ3_7  
TO52S1		 9qB4\ONXZ  
Ø0.8		 (_+ux1h6^  
0.5		 1_]%,  
2		 (d* | |"  
0.9
U[OUIXUi  
501197		 rY&#g%B6Fp  
AD1100-9		 rz2,42H]  
TO52S1		 e**'[3Y  
Ø1.13		 g6S-vSX,  
1		 Iz;^D!  
4		 83p8:C.Ze  
1.3
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501208		 T|j=,2_  
AD1500-9		 }_mMQg2>=  
TO5i		 A:(qF.Tm  
Ø1.5		 fF=tT C  
1.77		 & .#dZ}J  
2		 Uz[#ye  
2
hd[t&?{=  
501198		 9C7HL;MF  
AD3000-9		 s8qpK; O  
TO5i		 h0$ \JXk  
Ø3		 tB4yj_ZF  
7.07		 so| U&`G  
30		 3H4T*&9;n  
2
0>e]i[P.  
500161		 Y?zo")  
AD5000-9		 SJ:Teab  
TO8i		 ae2SU4Jx  
Ø5		 gw%L M7yQR  
19.63		 (?lT @RY/  
60		 >Rb jdM5K4  
3
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500756		 4!-R&<TLve  
AD230-9-400M		 ">S1,rhgS  
TO5		 1=!2|D:C)i  
AD230-9-400M-TO5 is a high frequency optical data receivercomprising an Avalanche Silicon Photodiode and a transimpedance amplifier ina hermetically sealed TO-5 package.
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500490		 /OMgj7olD  
AD500-9-400M		 :<0lCj  
TO5		 E8<,j})*  
AD500-9-400M-TO5 is a high frequency optical data receivercomprising an Avalanche Silicon Photodiode and a transimpedance amplifier ina hermetically sealed TO-5 package.
npbf>n^R  
Multi-Element Array
%.Kr`#lCr  
501099		 fD8GAav  
8AA0.4-9		 !1]jk(Z  
SOJ22GL		 w vI v+Q9  
APD Array 8 Elements, QE>80% at760-910nm with NTC
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501098		 }g|9P SbJ  
16AA0.13-9		 "-AFWWKtx  
SOJ22GL		 O#>,vf$  
APD Array 16 Elements, QE>80% at760-910nm with NTC
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500038		 "d M-3o<  
16AA0.13-9		 h gwS_L  
DIL18		 %zDi|WZ  
APD Array 16 Elements, QE>80% at760-910nm
98 uMD  
501097		 hAP2DeT$  
16AA0.4-9		 #T`1Z"h<  
SOJ22GL		 "+ k}#<P4\  
APD Array 16 Elements, QE>80% at760-910nm
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50130802		 62G %.'7  
25AA0.04-9		 Q7UQwAN'  
BGA		 - ku8n%u  
APD Array 25 (5×5) elements, QE>80% at760-910nm with PTC
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50130802		 3RcnoXX_  
25AA0.16-9		 r?pFc3 ~N  
BGA		 at2)%V)  
APD Array 25 (5×5) elements, QE>80% at760-910nm with PTC
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50130702		 vNZ"x)?  
64AA0.04-9		 [[Nn~7  
BGA		 2uF'\y  
APD Array 64 (8×8) elements, QE>80% at760-910nm with PTC
9'|_1Q.b^  
501207		 *xKy^f  
QA4000-9		 q%)."10}]  
TO8Si		 T$;BZ=_  
Quadrant Avalanche Photodiode, QE>80%at 760-910nm
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Series 10: NIR sensitivity enhanced -1064nm (specifically for laser rangefinders, targeting systems or anyapplications using YAG lasers or similar NIR radiation sources)
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Order #		 XXD4T9Wy  
Type		 9 OlJC[  
Active Area		 SaRn>n\  
Dark Current		 kn`O3cW/  
Rise Time
gzlRK^5  
Chip		 R[m+s=+  
Package		 Tl?jq]  
Size		 %.fwNS  
Area		 :SZi4:4-J8  
M=100		  _BCq9/  
M=100 1064nm
UA4MtTp`  
mm		 /IH F  
mm2		 U0N6\+  
nA		 3b`#)y^y?%  
ns
\vpX6!T  
500953		 eF4f7>5Cv  
AD500-10		 wawJZ+V  
TO5i		 rV*Ri~Vx  
Ø0.5		 p>+Q6o9O  
0.2		 zOy_qozk  
1.5		 'S9jMyZrZ  
4
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501233		 6;M{suG|  
AD800-10		 P"[{s^mb  
TO5i		 o,$K=#Iv  
Ø0.8		 YjPj#57+  
0.5		 3XncEdy_  
3		 Odw9]`,T  
5
3aJYl3:0B  
500883		 ^5k~ 7F.  
AD1500-10		 ke2M&TV  
TO5i		 mKUm*m#<R  
Ø1.5		 3k/X;:,.  
1.77		 \J-D@b;  
7		 FB3}M)G>M  
5
~h3~<p#M`  
50123401		 aeEio;G1  
AD4000-10		 zkd^5A; `  
TO8Si		 EbJc%%c  
Ø4		 \9}DAM_  
12.56		 m.lzkS]P  
50		 ^bLFY9hSC  
6
Z ?F_({im  
501387		 . \8"f]~  
AD800-10		  LYyud  
TO8S		 e^N}(Kpy  
High speed, high gain, low noise, lowpower consumption hybrid (AD800-10+TIA)
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Multi-Element Array
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501174		 h" f_T [  
QA4000-10		 1=PTiDMJ<*  
TO8Si		 &#!1 Y[e^  
Quadrant Avalanche Photodiode, High QE at850-1070nm
)`mBvS.}  
`(E$-m-~jH  
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