新势力光电供应雪崩二极管

发布：newopto 2014-11-13 11:40 阅读：1678
新势力光电供应雪崩二极管（APD，Avalanchephotodiodes），是一种内部增益机制的光电二极管：蓝光增强型、红光增强型、红外增强型（900nm、1064nm）。该系列雪崩二极管应用广泛，包括：安检设备、激光测距、运动控制、分析仪器、生物医疗、光通信、军事、航空航天、光通讯。备注：如果采购数量10片以上，新势力光电提供配套的驱动电路模块。 i6O'UzD@T  
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Series 11: Blue sensitivity enhanced (forbiomedical applications)
WY26Iq@C  
Order #		 |{rhks~  
Type		  gA19f  
Active Area		 }T53y6J#  
Dark Current		 ^C}f|{J  
Rise Time
`u8(qGg7GF  
Chip		 aaI5x  
Package		 "i!W(}x+  
Size		 <<9|*Tz  
Area		 JZqJ&   
M=100		 T ^/\Rr  
410nm 50Ω
Wq<H sJd/  
mm		 +hs:W'`%  
mm2		 Ia:M+20n  
nA		 V Y@`)  
ns
D"{%[;J  
500970		 s1X?]A  
AD800-11		 vpdT2/F  
TO52S1		 M1*x47bN  
Ø0.8		 J~N!. i  
0.5		 1b@]^Ue  
1		 +5%ncSJx  
1
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500967		 HLqDI lL  
AD1900-11		 <co:z<^lqu  
TO5i		 |WgFLF~k  
Ø1.95		 yEVnG` 1  
3		 GMpg+rK  
5		 p;mV?B?oAQ  
2
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Series 12: Red sensitivity enhanced(cut-off frequency up to 3 GHz)
k~JTQh*,w  
Order #		 M0]J `fL@  
Type		 mlz|KI~\F;  
Active Area		 NkAu<> G _  
Dark Current		 31p7oRzr  
Rise Time
WHRBYq_  
Chip		 >Hd!o"I  
Package		 ~6[3Km|2  
Size		 tHFUV\D;,  
Area		 }'uV{$  
660nm M=100		 V}h)e3X  
660nm 50Ω
l_ LH!Tu  
mm		 ) gxN' z  
mm2		 IYhn*  
A/W		 - R`nitf  
GHz
d\tA1&k71  
501828		 [6nN]U~Y  
AD100-12		 !]&+g'aC3  
LCC6.1		 /@",5U#  
Ø0.1		 98CS|NEe  
0.008		 8(H!iKHe  
50		 \M*c3\&~,e  
typ.3, min.2
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501829		 I0_>ryA  
AD100-12		 =3GgfU5k  
LCC6.1f		 Q6CVMYT  
Ø0.1		 MO|8A18B  
0.008		 'Ojxzz*tT  
44		 =r~ExW}+  
typ.3, min.2
&E-q(3-  
501831		 w1+ %+x  
AD100-12		 2>xEE  
TO52S1		 cfHtUv  
Ø0.1		 +y 48.5  
0.008		 QPB ^%8  
50		 0 l+Jq  
typ.3, min.2
6N/6WrQEeg  
501157		 AzSmfEaU0  
AD230-12		 ?p>m ;Aq  
LCC6.1		 5W09>C>OC  
Ø0.23		 es\Fn#?O  
0.042		 zTw<9Nf  
50		 2 yRUw  
typ.3, min.2
VD+v \X_  
501156		 p }3$7CR/  
AD230-12		 )1!0'j99.  
LCC6.1f		 +rka 5ts  
Ø0.23		 BfDC[(n`  
0.042		 /LG}nY  
44		 V"KuwM  
typ.3, min.2
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501820		 ;/!o0:m^I  
AD230-12		 Dt'bbX'edw  
LCC6.1f		 D*g K,`  
Ø0.23		 u/J1Z>0  
0.042		 *d-JAE  
44		 L$@qEsO  
typ.3, min.2
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501162		 jN/snU2\0  
AD230-12		 Am >b7Z!  
TO52S1		 9r 5(  
Ø0.23		 }|],UXk{xB  
0.042		 jEL"Q?#  
50		 HcGbe37Xq  
typ.3, min.2
j/1 f|x  
501155		 `KieN/d%  
AD500-12		 Q3[nS(#Z/=  
LCC6.1		 /#[mV(k  
Ø0.5		 @u:q#b  
0.196		 OZ&SxR%q4  
50		 IB^vEY!`6_  
typ.3, min.2
Tzfk_h3hE  
501154		 P}he}k&IR  
AD500-12		 .RWq!Z=)3  
LCC6.1f		 USKC,&6&}  
Ø0.5		 {`9J8qRY  
0.196		 "7w=LhzV[$  
44		 !14l[k+\  
typ.3, min.2
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501819		 L#N ]1#;  
AD500-12		 Qa"4^s  
LCC6.1f		 )4n]n:FjN  
Ø0.5		 `~ h8D9G  
0.196		 pbG v\S F  
44		 fbJa$  
typ.3, min.2
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501163		 rE?B9BF3O  
AD500-12		 HC| ]Au  
TO52S1		 b6@0?_n  
Ø0.5		 Q}1qt4xy*  
0.196		 -9R.mG  
50		 /&5:v%L  
typ.3, min.2
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Series 8: Optimized for high cut-offfrequencies-850 nm (optimized for high speeds)
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Order #		 5qkyi]/U8  
Type		 *nwH1FjH  
Active Area		 \\Nt^j3qR  
Dark Current		 ;6`7 \  
Rise Time
[2ri=lf,  
Chip		 a@#<qf8g  
Package		 )#,a'~w  
Size		 f+2mX"Z[F  
Area		 ~l*[=0}  
M=100		 BipD8`a  
M=100 20V 50Ω
9!6u Yf+  
mm		 DN;$ ->>  
mm2		 &0OH:P%  
nA		 q'%!qa+  
ns
)2R]KU_=g  
501810		 .GvZv>  
AD100-8		 b6'ZVB  
LCC6.1		 5Trc#i<\  
Ø0.1		 y.a)M?3  
0.008		 x6Q_+!mnk  
0.05		 sfsK[c5bm  
<0.18
#y1M1Og  
501811		 Rj-4K@a8#N  
AD100-8		 bs)Ro/7}  
LCC6.1f		 Kp6%=JjO  
Ø0.1		 %/R[cj 8  
0.008		 l;h5Y<A%?  
0.05		 Cm-dos  
<0.18
+d3h @gp  
501812		 pMkM@OH  
AD100-8		 _;:B@Z  
LCC6.1f		 X&!($*/  
Ø0.1		 _ + >V(,{G  
0.008		 Nb\B*=4AR  
0.05		 _w7yfZLv+  
<0.18
yg"FF:^T  
500011		 gY_AO1  
AD100-8		 m21H68y  
TO52S1		 (>gb9n  
Ø0.1		 ,+FiP{`  
0.008		 y>ePCDR3  
0.05		 s_U--y.2r(  
<0.18
Tlk!6A:  
501171		 J$,bsMIX  
AD100-8		 8>(/:u_x  
TO52S3		 &Vg)/t;  
Ø0.1		 ^C;ULUn3  
0.008		 'Ge8l%p  
0.05		 qG#ZYcVec  
<0.18
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501078		 H)5"<=]  
AD230-8		 Q 2 B  
LCC6.1		 ;6*$!^*w  
Ø0.23		 Y\E7nll:.  
0.04		 z!)@`?  
0.3		 5PE}3he:  
0.18
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501079		 `Cz_^>]|=  
AD230-8		 ,m5tO  
LCC6.1f		 R HmT$^=  
Ø0.23		 1}OM"V  
0.04		 B9]bv]  
0.3		 c+:^0&l  
0.18
~zQxfl/  
501805		 ^_uCSA'X  
AD230-8		 p-,Bq!aG$  
LCC6.1f		 , jCE hb  
Ø0.23		 @R;&PR#5  
0.04		 E|_}?>{R  
0.3		 z]!w@:  
0.18
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500019		 2FR 5RG oD  
AD230-8		 fRp(&%8E  
TO52S1		 9yj'->dL  
Ø0.23		 =|H.r9-PK6  
0.04		 dAi.^! !  
0.3		 FDuIm,NI  
0.18
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500022		 _U Y5  
AD230-8		 4j<[3~:0 o  
TO52S3		 1tlqw  
Ø0.23		 @GF3g=  
0.04		 d1 lxz?r  
0.3		 @%r "7%tq>  
0.18
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501496		 ,?wxW  
AD230-8		 =0SJf 3  
ODFN2x2		 m1M6N`f  
Ø0.23		 >".@;  
0.04		 =tl~@~pqI  
0.3		 Ei89Ngp\}  
0.18
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501077		 wqgKs=y  
AD500-8		 Q|G|5X  
LCC6.1		 /`j2%8^N  
Ø0.5		 _.SpU`>/f  
0.2		 lz _ r  
0.5		 c!mMH~#  
0.35
:)%cL8Nz]$  
501076		 W?n/>DML  
AD500-8		 So4#n7  
LCC6.1f		 #p-\Y7f  
Ø0.5		 4|DN^F~iut  
0.2		 .p(r|5(b  
0.5		 :bXTV?#0  
0.35
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501809		 @@=,bO  
AD500-8		 ( geV(zT  
LCC6.1f		 1G'pT$5&  
Ø0.5		 VREDVLQT  
0.2		 t<%+))b  
0.5		 B)rBM  
0.35
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500030		 ^!x qOp!  
AD500-8		 ,C|aiSh0-  
TO52S1		 f4 vdJ5pV  
Ø0.5		 .`oKd@I*"  
0.2		 TV}=$\D  
0.5		 !$<Kp6  
0.35
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500305		 #z}0]GJKj  
AD500-8		 !e('T@^u6u  
TO52S2		 /9| 2uw`  
Ø0.5		 AG"iS<u  
0.2		 IEWl I  
0.5		 Zt 1nH  
0.35
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500155		 ^BP4l_rO9  
AD500-8		 ]PbwG  
TO52S3		 }xY|z"&  
Ø0.5		 GqgJ]m  
0.2		  !>Q{co'  
0.5		 6mjD@  
0.35
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500947		 'lmjZ{k  
AD800-8		 0UQ DB5u  
TO52S1		 M`xI N~  
Ø0.8		 J~ wu*x  
0.5		 4}] In/yA  
2		 !ED,'d%J  
0.7
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501117		 X"%eRW&qu/  
AD1100-8		 Y>K8^GS  
TO52S1		 ?XVox*6K&  
Ø1.13		 UN:cRH{?*  
1		 ~xc0Ky?8  
4-6		 S(:|S(  
1
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500015		 Gz7,g Y  
AD1900-8		 fLV@~T|  
TO5i		 8'u,}b)  
Ø1.95		 GD!!xt  
3		 LtNspFoLb  
15		 Hq,znRz~`  
1.4
uC2 5pH"  
501194		 '(8} <(%  
AD3000-8		 yaAg!mW  
TO5i		 #?~G\Ux0/  
Ø3		 .iST!nh  
7.07		 Vb?_RE_H  
30		 OO;I^`Yn  
2
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500160		 :BblH0'  
AD5000-8		 (R!.=95@  
TO8i		 _;-b ZH  
Ø5		 VGOdJ|2]Wr  
19.63		 $-gRD|oY  
60		 ?y^ ix+ M  
3
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500002		 ]Y f8  
AD230-8-2.3G		 w^S]HzMd  
TO5		 b+$-f:mj  
AD230-8-2.3GTO5 is a high frequency optical data receiver comprising an Avalanche SiliconPhotodiode and a transimpedance amplifier in a hermetically sealed TO5package.
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500003		 i^ eDM.#X  
AD500-8-1.3G		 ^k!u  
TO5		 %i&\ X[  
AD500-8-1.3GTO5 is a high frequency optical data receiver comprising an Avalanche SiliconPhotodiode and a transimpedance amplifier in a hermetically sealed TO5package.
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Series 9: NIR sensitivity enhanced-900nm(specifically for LIDAR and laser rangefinders)
,k m`-6.2?  
Order #		 -i4hJC!3  
Type		 }$:ha>  
Active Area		 5(y Q-/6C+  
Dark Current		 &>XSQB(&%  
Rise Time
:Z]\2(x  
Chip		 Vje LPbk)  
Package		 ?)4c!3#  
Size		 X&,a=#C^  
Area		 Q5;EQ .#  
M=100		 t s=+k/Z  
M=100
NaeG)u#+  
mm		 >n>gX/S<C  
mm2		 2O`s'&.h  
nA		 $"Nqto~  
ns
q?# w%0}  
501815		 -J++b2R\%  
AD100-9		 9bD ER  
LCC6.1		 xGX U7w:X  
Ø0.1		 I0sw/,J/Z  
0.008		 `~LaiN.  
0.1		 ~-NlTx  
<0.5
, ins/-3  
501816		 7[(<t+  
AD100-9		 </qli-fXB}  
LCC6.1f		 )(`,!s,8)  
Ø0.1		 !(qaudX{>k  
0.008		 =UF mN"  
0.1		 /x&52~X5-  
<0.5
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501123		 \05 n$.  
AD230-9		 9K#U<Q0b'  
LCC6.1		 Tc;j)_C)  
Ø0.23		 QBTjiaYGa'  
0.04		 o&rNM5:  
0.5		 ~)!vhdBe  
0.5
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501817		 h?&S*)1  
AD230-9		 5i&+.?(Z=  
LCC6.1f		 S{)'1J_0  
Ø0.23		 8MCSU'uQ  
0.04		 W sDFui  
0.5		 9 X87"  
0.5
qF4pTQf  
500020		 6s&%~6J,  
AD230-9		 p}k\l dmh{  
TO52S1		 (\$=+' hy  
Ø0.23		 = k>ygD_  
0.04		 mV'^4by  
0.5		 [214b=  
0.5
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501265		 ~@EBW3>~5  
AD230-9		 X:gE mcXc  
TO52S1F2		 qeoj  
Ø0.23		 Z$ Mc{  
0.04		 $4]"g}_  
0.5		 m*H6\on:  
0.5
t+ O7dZt%r  
500023		 e{`DvfY21  
AD230-9		 ~er4w+"  
TO52S3		 T\$r|  
Ø0.23		 kG]FB.@bG  
0.04		 .5?Md  
0.5		 g+92}$_  
0.5
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501122		 e(sV4Z~  
AD500-9		 ryoD 1OE  
LCC6.1		 St~a/L q6  
Ø0.5		 $eUJd Aetk  
0.2		 K@+(6\6I  
0.8		 (= ,w$  
0.55
O=w u0n  
501818		 %^66(n)  
AD500-9		 }e0)=*;l  
LCC6.1f		 A+1>n^^_<  
Ø0.5		 >Y[nU~w  
0.2		 )K^5+oC17  
0.8		 9W@ Tf  
0.55
X |X~|&j  
500031		 <MoKTP-<  
AD500-9		 +b6kU{  
TO52S1		 4?9cyv4H  
Ø0.5		 :p,DAt}  
0.2		 5qx$=6PT  
0.8		 5Rec~&v  
0.55
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500590		 E0Jk=cq  
AD500-9		 2zN%Z!a#J  
TO52S1F2		 tcU4$%H/  
Ø0.5		 !^<%RT9@|  
0.2		 "<I*ViZ  
0.8		  h2]gA_T`  
0.55
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500306		 L;s,xV  
AD500-9		 3"J85V%h]n  
TO52S2		 QnNddCiu=  
Ø0.5		 KF4}cM=.5  
0.2		 WF0[/Y  
0.8		 $S _VR  
0.55
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500156		 #GT4/Ej}W  
AD500-9		 F-2&P:sjQ  
TO52S3		 qC aM]Y  
Ø0.5		 V[N4 {c  
0.2		 q-)Ynp4'  
0.8		 L 2:N@TP  
0.55
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501196		 z4 yV1  
AD800-9		 -^%YrWgd?  
TO52S1		 oDEvhN T  
Ø0.8		 <X,0\U!lL  
0.5		 )0W-S9e<  
2		 #b?)fqRJL  
0.9
4BgrG[l)  
501197		 IJt8 * cw  
AD1100-9		 nY[]k p@  
TO52S1		 3\jcq@N  
Ø1.13		 M;Dk$B{;R  
1		 iCrLZ" $M  
4		 g`BtG  
1.3
BCtm05  
501208		 \P` mV9P  
AD1500-9		  + Y  
TO5i		 AT%@T|  
Ø1.5		 j >wT-s  
1.77		 !?~>f>js_l  
2		 I T\lkF2  
2
U1wsCH3+n  
501198		 4dwG6-  
AD3000-9		 lZa L=HS#L  
TO5i		 ?Q XS?  
Ø3		 uqg#(ADy?R  
7.07		 GcL:plz  
30		 IfdgMELk  
2
i$:\,  
500161		 b\l +S2  
AD5000-9		 rcWr0q  
TO8i		 ED+tVXyw  
Ø5		 -:|1>og  
19.63		 ))qOsphN  
60		 U%~L){<V[  
3
+%hA 6n  
500756		 (gn)<JJS}  
AD230-9-400M		 ?xbPdG":R  
TO5		 0WjPo  
AD230-9-400M-TO5 is a high frequency optical data receivercomprising an Avalanche Silicon Photodiode and a transimpedance amplifier ina hermetically sealed TO-5 package.
P{-f./(JD  
500490		 .Y"H{|]Mnh  
AD500-9-400M		 3'H 1T  
TO5		 *Q@%< R  
AD500-9-400M-TO5 is a high frequency optical data receivercomprising an Avalanche Silicon Photodiode and a transimpedance amplifier ina hermetically sealed TO-5 package.
f.4m6"1  
Multi-Element Array
Z,~EH  
501099		 FYe(S V(9  
8AA0.4-9		 Q]q`+ Z65  
SOJ22GL		 _p~lL<q-K[  
APD Array 8 Elements, QE>80% at760-910nm with NTC
CqRG !J  
501098		 ?>_[hZ  
16AA0.13-9		 IfH*saN7  
SOJ22GL		 @} 61D  
APD Array 16 Elements, QE>80% at760-910nm with NTC
j5,vSh~q;'  
500038		 q5irKT*Hs  
16AA0.13-9		 pD+_ K  
DIL18		 .7ZV: m  
APD Array 16 Elements, QE>80% at760-910nm
m{/?6h 1  
501097		 ng-g\&-  
16AA0.4-9		 V'";u?h#S  
SOJ22GL		 F0O/SI(cA  
APD Array 16 Elements, QE>80% at760-910nm
Hq{i-z+  
50130802		 ZE())W"  
25AA0.04-9		 ;_.%S*W\  
BGA		 [f'V pId8  
APD Array 25 (5×5) elements, QE>80% at760-910nm with PTC
;'.[h*u~<  
50130802		 Xgge_`T9  
25AA0.16-9		 1]L 0r  
BGA		 X  8V^  
APD Array 25 (5×5) elements, QE>80% at760-910nm with PTC
T9@W,0#  
50130702		 #PzRhanX  
64AA0.04-9		 kvzGI>H:  
BGA		 A8?uCkG  
APD Array 64 (8×8) elements, QE>80% at760-910nm with PTC
CH6^;.  
501207		 *(%]|z}]m  
QA4000-9		 8y-Sd\0g  
TO8Si		 U2=PmS P  
Quadrant Avalanche Photodiode, QE>80%at 760-910nm
RJ ,a}w[9  
Series 10: NIR sensitivity enhanced -1064nm (specifically for laser rangefinders, targeting systems or anyapplications using YAG lasers or similar NIR radiation sources)
CzF#feTA  
Order #		 J1waiOh  
Type		 ,\ y)k}0lH  
Active Area		 Y<'T;@  
Dark Current		 0] 'Bd`e  
Rise Time
de?Bn+mvi.  
Chip		 NuLyu=.?  
Package		  6j FD|  
Size		 l2))StEm  
Area		 R^`#xQ  
M=100		 RR u1/nam  
M=100 1064nm
5]/i[T_  
mm		 VP|ga }(  
mm2		 T}ZUw;}BL  
nA		 lg)jc3  
ns
}B=`nbgIG7  
500953		 sLGut7@Sg  
AD500-10		 ?mdgY1  
TO5i		 l.r i ]e  
Ø0.5		 F;Q8^C0e*c  
0.2		 y$=$Yc&Ub  
1.5		 )z'LXy8  
4
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501233		 zJnF#G  
AD800-10		 t(-`==.R  
TO5i		 4ZY0!'be-R  
Ø0.8		 g5gq {KlU  
0.5		 teO%w9ByY  
3		 }g1V6 `8&  
5
Ww9%6 #i t  
500883		 KTV~g@Jf  
AD1500-10		 (Ev/R%Z  
TO5i		 FOB9J.w4  
Ø1.5		 }%K)R 5C  
1.77		 | |=q"h3(  
7		 !,f{I5/  
5
YK[PC]w  
50123401		 fiuF!<#;6  
AD4000-10		 [<;4$}f\  
TO8Si		 N/ 7Q(^  
Ø4		 V) #vvnq  
12.56		 xh$1Rwa  
50		 ZP>KHiA  
6
p<5ED\;N;  
501387		 U$; FOl  
AD800-10		 B3Id}[V  
TO8S		 \ /(;LHWQ  
High speed, high gain, low noise, lowpower consumption hybrid (AD800-10+TIA)
%d<uOCf\Q  
Multi-Element Array
l+e L:C!  
501174		 XH_XGzBQS  
QA4000-10		 UZ8 vZ  
TO8Si		 |a7W@LVYD  
Quadrant Avalanche Photodiode, High QE at850-1070nm
%d..L-`]ET  
9>y6zFTV  
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