新势力光电供应雪崩二极管

发布：newopto 2014-11-13 11:40 阅读：1616
新势力光电供应雪崩二极管（APD，Avalanchephotodiodes），是一种内部增益机制的光电二极管：蓝光增强型、红光增强型、红外增强型（900nm、1064nm）。该系列雪崩二极管应用广泛，包括：安检设备、激光测距、运动控制、分析仪器、生物医疗、光通信、军事、航空航天、光通讯。备注：如果采购数量10片以上，新势力光电提供配套的驱动电路模块。 zFVNb  
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Series 11: Blue sensitivity enhanced (forbiomedical applications)
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Order #		 J+oK:tzt8  
Type		 +dd\_\  
Active Area		 w6ZyMR,T  
Dark Current		 -yKx"Q9F  
Rise Time
y" 4Nw]kU  
Chip		 Y"J' 'K  
Package		 KI&+Zw4VL  
Size		 p'PHBb8I  
Area		 Imi;EHW  
M=100		 y U"pU>fV@  
410nm 50Ω
b[}f]pB@n  
mm		 <\i}zoPO  
mm2		 A UCk]  
nA		 2M`]nAk2a  
ns
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500970		 ce3w0UeV  
AD800-11		 xqV>m  
TO52S1		 n/ ]<Bc?  
Ø0.8		 px`o.%`'  
0.5		 a>w@9   
1		 R.KqTEs<k  
1
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500967		 r?^[o  
AD1900-11		 NI(fJ%U  
TO5i		 )"Ef* /+  
Ø1.95		 {R`,iWV  
3		 bwH l}3  
5		 rgth2y]  
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Series 12: Red sensitivity enhanced(cut-off frequency up to 3 GHz)
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Order #		 }o>6 y>=  
Type		 g~zz[F 8U  
Active Area		 {Pi+VuLE  
Dark Current		 N#C"@,}Y  
Rise Time
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Chip		 }zA kUt  
Package		 Kk?]z7s-4  
Size		 )(&Z&2~A  
Area		 .#py5&`%  
660nm M=100		 +4[L_  
660nm 50Ω
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mm		 H l'za  
mm2		 d E0 `tX  
A/W		 (eTe`   
GHz
<<xUh|zE  
501828		 FlWgTn>  
AD100-12		 3*N-@;[>b  
LCC6.1		 YMlnC7?_ /  
Ø0.1		 BvXA9YQ3  
0.008		 u}zCcWP|L  
50		 %t*_Rtz\o  
typ.3, min.2
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501829		 *aE/\b  
AD100-12		 PEKU  
LCC6.1f		 fjc8@S5x9j  
Ø0.1		 XkG:1H;Q%  
0.008		 {km~,]N  
44		 FXpI-?#E<  
typ.3, min.2
rQ_!/J[9  
501831		 WtT* 1Z  
AD100-12		 \Lp|S:u  
TO52S1		 X/=*o;":  
Ø0.1		 br@GnjG  
0.008		 O WJv<3  
50		 i,[S1g  
typ.3, min.2
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501157		 3WOm`<  
AD230-12		 x WZ87  
LCC6.1		 B=4xZJ Py  
Ø0.23		 nnv&~C  
0.042		 =Nyq1~   
50		 T#HW{3  
typ.3, min.2
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501156		 +prr~vgE  
AD230-12		 4pYscB  
LCC6.1f		 ;9WS#>o  
Ø0.23		 n54}WGo>9  
0.042		 ,Pq@{i#  
44		 Ng1{ NI+S  
typ.3, min.2
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501820		 m2i'$^a#  
AD230-12		 ~d9R:t1  
LCC6.1f		 v;%>F)I  
Ø0.23		 T>$S&U  
0.042		 :1O49g3R  
44		 p3Ey[kURp  
typ.3, min.2
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501162		 53g(:eB  
AD230-12		 _J N$zZ{  
TO52S1		 B1u.aa$  
Ø0.23		 D^\gU-8M  
0.042		 eu^B  
50		 8<2 [ F  
typ.3, min.2
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501155		 _e9S"``  
AD500-12		 hFLLg|@  
LCC6.1		 UA%tI2  
Ø0.5		 3|Vh[iAa\  
0.196		 Z%_m<Nf8T  
50		 #rps2nf.j  
typ.3, min.2
fG`<L;wi  
501154		 u/,ng&!  
AD500-12		 _d J"2rx  
LCC6.1f		 ?h1r6?Sug{  
Ø0.5		 5Mb5t;4b  
0.196		 K'DRX85F  
44		 av; ~e<  
typ.3, min.2
:wR aB7  
501819		 .!><qV g  
AD500-12		 9Q.}jV  
LCC6.1f		 0CtPq`!  
Ø0.5		 1P '_EJ]M  
0.196		 920 o]Dh=t  
44		 Q"Ur*/-U  
typ.3, min.2
)r +o51gp  
501163		 4Ww.CkRG  
AD500-12		 6.0/asN}  
TO52S1		 qe@ctHpn  
Ø0.5		 c c^I9g~  
0.196		 ^~65M/  
50		 )V6<'>1WZ  
typ.3, min.2
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Series 8: Optimized for high cut-offfrequencies-850 nm (optimized for high speeds)
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Order #		 _(&XqEX  
Type		 FsXqF&{  
Active Area		 .on}F>3k$  
Dark Current		 _=s{,t &u  
Rise Time
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Chip		 _+?v'#  
Package		 ~ v21b?   
Size		 =4H"&Eu{  
Area		 g,,'Pdd7Pn  
M=100		 Bl6>y/  
M=100 20V 50Ω
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mm		 n\x@~ SzrX  
mm2		 \as^z!<  
nA		 j1 Q"s(  
ns
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501810		 #rs]5tx([  
AD100-8		 ,^#{k!uaC{  
LCC6.1		 x6BO%1  
Ø0.1		 kbHfdA  
0.008		 '9R.$,N  
0.05		 S~+er{,ht4  
<0.18
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501811		 ]g0h7q)79  
AD100-8		 }+wvZq +c  
LCC6.1f		 aGRD`ra  
Ø0.1		 [G=+f6 a  
0.008		 m\];.Da  
0.05		 {"x>ewAf  
<0.18
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501812		 |'R^\M Q  
AD100-8		 U/|;u;H=  
LCC6.1f		 +"HLx%k  
Ø0.1		 -3)]IA  
0.008		 6L)]nE0^  
0.05		 JO^E x1c  
<0.18
`]q>A']Dl  
500011		 wj$J} F  
AD100-8		 |~Op|gs  
TO52S1		 ,8vqzI  
Ø0.1		 <Z -d5D>  
0.008		 av.L%l&d  
0.05		 "")I1 iO g  
<0.18
TO|&}sDh  
501171		 =mq02C~y  
AD100-8		 I\|x0D  
TO52S3		 6u'+#nm  
Ø0.1		 yHka7D  
0.008		 lg(*:To3B  
0.05		 \U0p?wdr:  
<0.18
x2KIGG ^  
501078		 9MmAoLm  
AD230-8		 `h:$3a:5  
LCC6.1		 e{~3&  
Ø0.23		 6;:s N8M+1  
0.04		 T"NDL[*  
0.3		 yd-r7iq  
0.18
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501079		 !D_Qat  
AD230-8		 ^x:%_yGY  
LCC6.1f		 ~Lyy7 B9  
Ø0.23		 Q}A*{9#|  
0.04		 ncGg@$E  
0.3		 /]mfI&l+9  
0.18
*G<K@k  
501805		 A`NkgVq5:  
AD230-8		 h7}D//~p  
LCC6.1f		 &<s[(w!%%  
Ø0.23		 ?D6?W6@  
0.04		 efK|)_i :  
0.3		 E&}@P0^  
0.18
3XCePA5z  
500019		 2hlb$N-hk  
AD230-8		 ?8g*"& cn  
TO52S1		 aCq ) hR  
Ø0.23		 YH0=Y mU#X  
0.04		 +zU[rhMk'  
0.3		 ?"d25LyN  
0.18
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500022		 <vMdfw"(  
AD230-8		 k u@sQn  
TO52S3		 oVG/[e|c'  
Ø0.23		 D*Cn!v$  
0.04		 W[+=_B  
0.3		 deRnP$u0  
0.18
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501496		 0|RFsJ"  
AD230-8		 Kx-s95t  
ODFN2x2		 #J=@} S)  
Ø0.23		 s+EJXox w  
0.04		 0[f8Gb3  
0.3		 s.9)? < [  
0.18
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501077		 yF~iVt  
AD500-8		 7U@;X~c  
LCC6.1		 l8$7N=Y  
Ø0.5		 #QWG5  
0.2		 o 0-3[W'x<  
0.5		 x#-+//  
0.35
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501076		 f vAF0 a  
AD500-8		 yV'<l .N  
LCC6.1f		 <0P7NC:Ci  
Ø0.5		 ~h:/9q  
0.2		 &!adW@y  
0.5		 qoifzEc`U  
0.35
2l8TX#K  
501809		 ZRK1 UpP  
AD500-8		 iG.qMf.  
LCC6.1f		 {<p-/|Z52  
Ø0.5		 ~ sC<V  
0.2		 cNd;qO0$  
0.5		 , :10  
0.35
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500030		 U#7moS'r  
AD500-8		 K4H U 9!  
TO52S1		 m9&MTR D\  
Ø0.5		 @S-p[u  
0.2		 Me.t_)  
0.5		  .L vg $d  
0.35
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500305		 %.zcE@7*  
AD500-8		 ~<)CI0=  
TO52S2		 nJ ZQRRa:C  
Ø0.5		 /.[;u1z"^  
0.2		 lwhVP$q}  
0.5		 uqN:I)>[P  
0.35
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500155		 M<s Y_<z  
AD500-8		 9AbSt&#  
TO52S3		 4Y=sTXbFt  
Ø0.5		 #hNp1y2  
0.2		 rl <! h5  
0.5		 X53TFRxnT  
0.35
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500947		  <0,szw  
AD800-8		 CXzN4!  
TO52S1		 8" x+^  
Ø0.8		 +&T;jad2  
0.5		 mJ>@Dh3>G  
2		 5:=ECtKi  
0.7
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501117		 D>YbL0K>X~  
AD1100-8		 l9 K 3E<g  
TO52S1		 %?4 G^f  
Ø1.13		 NWGSUUa  
1		 SSS)bv8m  
4-6		 T}?vp~./   
1
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500015		 dwQ*OxFl  
AD1900-8		 ,r,~1oV<"  
TO5i		 CQq'x +{F  
Ø1.95		 /R_*u4}iD  
3		 4zF|}aiQ  
15		 ~okIiC]#  
1.4
sH^?v0^a  
501194		 +Oae3VFf;  
AD3000-8		 -V'`;zE6  
TO5i		 "hRY+{m  
Ø3		 -zeodv7  
7.07		 [7gyF}*;  
30		 2C@hjw(  
2
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500160		 ,RkL|'1l  
AD5000-8		 ~urV`J  
TO8i		 Oc;/'d2  
Ø5		 2p(M`@  
19.63		 iL-I#"qT,  
60		 dVDQ^O&  
3
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500002		 4>4*4!KR}  
AD230-8-2.3G		 Nxu 10  
TO5		 8gap _qTo  
AD230-8-2.3GTO5 is a high frequency optical data receiver comprising an Avalanche SiliconPhotodiode and a transimpedance amplifier in a hermetically sealed TO5package.
J&{qe@^  
500003		 o7feH 6Sh  
AD500-8-1.3G		 fhu- YYJt  
TO5		 mMqT-jT  
AD500-8-1.3GTO5 is a high frequency optical data receiver comprising an Avalanche SiliconPhotodiode and a transimpedance amplifier in a hermetically sealed TO5package.
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Series 9: NIR sensitivity enhanced-900nm(specifically for LIDAR and laser rangefinders)
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Order #		 {~ yj]+Im  
Type		 L~1u?-zu  
Active Area		 .>0e?A4,5?  
Dark Current		 i0uBb%GMT  
Rise Time
iTU 8WWY<  
Chip		 L<>;E  
Package		 <^,w,A  
Size		 zCD?5*7  
Area		 w,NK]<dU@  
M=100		 lgZ3=h  
M=100
B&0^3iKFi  
mm		 8uoFV=bj\  
mm2		 . m_y5J  
nA		 @<--5HbX  
ns
: j&M&+  
501815		 -@%*~^~z'  
AD100-9		 vq *N  
LCC6.1		 AiSO|!<.N  
Ø0.1		 Cz x U @  
0.008		 ~.M{n&NM  
0.1		 n6; jIf|  
<0.5
38! $9)  
501816		 Pze$QBNoRd  
AD100-9		 KzZ! CB\  
LCC6.1f		 &R/)#NAp  
Ø0.1		 ,v:m  
0.008		 !o 2" th  
0.1		 Lm\N`  
<0.5
bp2l%A;  
501123		 s M({u/  
AD230-9		 &TE=$a:d&  
LCC6.1		 JpE4 o2  
Ø0.23		 st ( l85  
0.04		 -,Cx|Nl  
0.5		 * 7.!"rb8A  
0.5
aM?Xi6 U5  
501817		 r#*kx#"  
AD230-9		 7+JQaYO`"  
LCC6.1f		 !>-cMI6E  
Ø0.23		 2}>jq8Y47  
0.04		 d7qY(!&  
0.5		 M4pE wD  
0.5
8I$B^,N  
500020		 D4<nS<8  
AD230-9		 :j9{n ,F  
TO52S1		 r]Bwp i%  
Ø0.23		 Oga0CR_  
0.04		 r9 'lFj  
0.5		 Q+)fI  
0.5
mf6?8!O}>  
501265		 LGKkT?fcSC  
AD230-9		 h<\o[n7j  
TO52S1F2		 &Eg>[gAIlp  
Ø0.23		 12DMb9_rp  
0.04		 $-YS\R\9x  
0.5		 qlD+[`=b  
0.5
^;n,C+  
500023		 p>h B&h  
AD230-9		 =K .'x  
TO52S3		 Um]>B`."wK  
Ø0.23		 mza1Q~<  
0.04		 ZdeRLX  
0.5		 UOSa`TZbZ  
0.5
xekW-=#a7-  
501122		 FYR%>Em  
AD500-9		 &10vdAnBRC  
LCC6.1		 Y>geP+ -  
Ø0.5		 ,n TC7V  
0.2		 &F9BaJ  
0.8		 GLQ1rT  
0.55
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501818		 ~'KymarPU  
AD500-9		 ]WR+>)ERb  
LCC6.1f		 q]YPDdR#  
Ø0.5		 &!]$#  
0.2		 <KqZ.7XfB  
0.8		 F7gipCc1We  
0.55
~Wjm"|c  
500031		 ` `j..v,  
AD500-9		 nx`!BNL'V  
TO52S1		 (xpj?zlmM  
Ø0.5		 8o#*0d|  
0.2		 _"SE^_&c  
0.8		 Pj>r(Cv  
0.55
l-xKfp`  
500590		 )$Xd#bzD|  
AD500-9		 vJVL%,7  
TO52S1F2		 G[n^SEY!  
Ø0.5		 #XR<}OYcL  
0.2		 'uS!rKkQlu  
0.8		 $7eO33Bm  
0.55
8 7P{vf#  
500306		 < gB>j\:  
AD500-9		 ,0%P3  
TO52S2		 EM!#FJh  
Ø0.5		 ^IGutZov  
0.2		 w|:UTJ>@  
0.8		 R}njFQvS)  
0.55
P3V=DOG"  
500156		 [` ~YPUR*  
AD500-9		 l[lUmE  
TO52S3		 ,g2|8>sJP  
Ø0.5		 p>4$&-  
0.2		 w^MU$ubx  
0.8		 P5/K?I~/So  
0.55
Kk+IUs  
501196		 <Z5ak4P  
AD800-9		 m<)0 XE6w  
TO52S1		 ^{&Vv(~!Q  
Ø0.8		 Au jvKQ(  
0.5		 }rf_:  
2		 S6-)N(3|  
0.9
p6m]( Jg  
501197		 $G/h-6+8  
AD1100-9		 &os9K)  
TO52S1		 (+7gS_c  
Ø1.13		 tu\;I{ h=0  
1		 `$oGgz6ZT  
4		 eq.K77El{J  
1.3
2|]$hjs  
501208		 &.z: i5&o!  
AD1500-9		 W5,e;4/hL  
TO5i		 }[ LME Z  
Ø1.5		 )\!_`ob  
1.77		 <>/0 ;J1<  
2		 lx*"Pj9hho  
2
xCwd*lsM  
501198		 y<mmv~=  
AD3000-9		 vQB;a?)o  
TO5i		 K] ;`  
Ø3		 V`xZ4 i%L  
7.07		 M{I8b<hY  
30		 k(1]!c4J0  
2
J J@O5  
500161		 OZ 4uk.)  
AD5000-9		 ut z.  
TO8i		 tDj~+lmdN  
Ø5		 1SIhW:C  
19.63		 2eErvfC[  
60		 sLiKcR8^  
3
MT{7I"  
500756		 ZL[~[  
AD230-9-400M		 IG@.WsM_  
TO5		 N-* ^V^V  
AD230-9-400M-TO5 is a high frequency optical data receivercomprising an Avalanche Silicon Photodiode and a transimpedance amplifier ina hermetically sealed TO-5 package.
0}:- t^P  
500490		 =xwA'D9]  
AD500-9-400M		 ^8dd  
TO5		 hE.NW  
AD500-9-400M-TO5 is a high frequency optical data receivercomprising an Avalanche Silicon Photodiode and a transimpedance amplifier ina hermetically sealed TO-5 package.
q{D_p[q  
Multi-Element Array
lq0@)'D  
501099		 E?%SOU<  
8AA0.4-9		 [@ExR*  
SOJ22GL		 \hGo D  
APD Array 8 Elements, QE>80% at760-910nm with NTC
f#~X4@DH`  
501098		 4w p5ghe  
16AA0.13-9		 s9t`!  
SOJ22GL		 'N1_:$z@(  
APD Array 16 Elements, QE>80% at760-910nm with NTC
>KF1]/y<  
500038		 piq1cV  
16AA0.13-9		 _86pbr9  
DIL18		 s$g"6;_\  
APD Array 16 Elements, QE>80% at760-910nm
s^5KFK1  
501097		 z"4UObVs  
16AA0.4-9		 cEkf9:_La  
SOJ22GL		 n _G< /8  
APD Array 16 Elements, QE>80% at760-910nm
3SbtN3  
50130802		 *#ccz  
25AA0.04-9		 t;wfp>El  
BGA		 U@ #YKv  
APD Array 25 (5×5) elements, QE>80% at760-910nm with PTC
lMpjE  
50130802		 Y\e,#y  
25AA0.16-9		 {(mT,}`4  
BGA		 hoy+J/  
APD Array 25 (5×5) elements, QE>80% at760-910nm with PTC
?m&?BsW$)  
50130702		 CiE  
64AA0.04-9		 |7@[+  
BGA		 Jt4&%b-T  
APD Array 64 (8×8) elements, QE>80% at760-910nm with PTC
*5( h,s3&  
501207		 ')pXQ  
QA4000-9		 8K qrB!  
TO8Si		 >;@ _TAF  
Quadrant Avalanche Photodiode, QE>80%at 760-910nm
Q;p?.GI?-  
Series 10: NIR sensitivity enhanced -1064nm (specifically for laser rangefinders, targeting systems or anyapplications using YAG lasers or similar NIR radiation sources)
4k9O6  
Order #		 j^DoILw  
Type		 ZA4NVt.yN  
Active Area		 nic7RN?F<  
Dark Current		 m.ib#Y)y  
Rise Time
9}e`_z  
Chip		 MCN}p i  
Package		 `<I+(8]Uz  
Size		 \B _g=K  
Area		 56i9V9{2  
M=100		 QdaYP  
M=100 1064nm
CRy;>UI  
mm		 ${"+bWG2G!  
mm2		 kh3PEq   
nA		 3ZNm,{  
ns
eil"1$k  
500953		 `TNW LD@Z  
AD500-10		 C[h"w'A2  
TO5i		 DgOO\  
Ø0.5		 _~m@ SI  
0.2		 I$@0FSl  
1.5		 ,v;P@RL|g  
4
_~f&wkc  
501233		 hr9[$4'H  
AD800-10		 uW*)B_c  
TO5i		 $5XE'm  
Ø0.8		 rwb7>]UI"d  
0.5		 Hk'D@(h S  
3		 %5|awWo_?  
5
3ifQKKcR{  
500883		 -ea":}/  
AD1500-10		 1m$:Rn^  
TO5i		 FsI51@V72Q  
Ø1.5		 v8Ga@*  
1.77		  egur}  
7		 Ke0j8|  
5
SGi(Zkc  
50123401		 IKT3T_\-I  
AD4000-10		 :\I88 -N@'  
TO8Si		 EqW/Wxv7b  
Ø4		 J&mZsa)4  
12.56		 WCc7 MK  
50		 }=.:bwX5  
6
u-yVc*<,  
501387		 b^WTX  
AD800-10		 {G _ :#cep  
TO8S		 fO6i  
High speed, high gain, low noise, lowpower consumption hybrid (AD800-10+TIA)
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Multi-Element Array
|$AoI  
501174		 b#ih= qE  
QA4000-10		 S6~&g|T,  
TO8Si		 %kB84dE  
Quadrant Avalanche Photodiode, High QE at850-1070nm
6|h~pH  
B.O &KRo  
如有需要，可直接联系我们，也可以登录官网查找所需要的产品： u">KE6um  
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