新势力光电供应压力传感器芯片

新势力光电供应压力传感器芯片，采用高级电阻传感技术（STARe, Sensor Technology for AdvancedResistors），特点：稳定性高、适用于恶劣环境，该系列压力传感器芯片应用：腐蚀性、流动性、油性环境下的高精密压力传感测量，包括：汽车制造、工业、医疗、大型家电。

9q<?xO Type	Biy$p6 Pressure	s\|Zv>Qt Min	]. ^e[v6 Typ	TUR2\|J@n Max	_ 3jY,* Unit
\|w`Q$ c The Pressure sensor chips are based onthe STARe (Sensor Technology for Advanced Resistors)
]1KF3$n0 Standard Line STARe, Piezoresistive chipsfor pressure measurements of 1 to 30 bar
=Wl}Pgo! SL21K-100k-A/GXX	R<8!lQ4s 100 kPa	-<n]Sv;V 40	=q*j". < 70	&28%~&L 130	)u5+<OG}= mV@5V
'uF"O"* SL21K-250k-A/GXX	h@(S];. 250 kPa	z_ia3k< 60	8Jf4"; 100	RD'i(szi? 140
q*K.e5"' SL21K-500k-A/GXX	K(p6P3Z 500 kPa	JXF@b-c 60	\| <l=i( 100	g=n /w 140
\MFjb IL SL21K-01M0-A/GXX	p3{ 3[fDx 1.0 MPa	THDyb9_g 60	<bgFc[Z 100	Z\*jt B: 140
6J%yo[A(w SL21K-03M0-A/GXX	G>c:+`KS 3.0 MPa	+`~6Weay 60	yixAG^< 100	5KDN8pJN 140
xsdi\ j;n> Industrial Line STARe, Piezoresistivechips for pressure measurements of 100 mbar to 400 bar
\#)w$O IL20L-10k0-GXX	dn@_\5 10 kPa	"iTi+UZxe 30	JQ]A"xTIa* 60	&>%9JXU 120	O0,=@nw8. mV@5V
q<Zza IL20L-35k0-A/GXX	;B!u=_' 35 kPa	Omy<Y@$ 40	*.F4?i2D 100	*b+~@o 160
a EmLf IL20M-03M0-A/GXX	Y\|96K2BR 3.0 MPa	E*X-f" 60	rRzc"W}K+ 100	lcYjwA 140
&x<y4ORH\| IL20M-100k-A/GXX	Ub-q0[6 100 kPa	&)v}oHy,m 60	%?z8*G]M 100	l's*HExR 140
Doc_rQYku IL20M-250k-A/GXX	IG=#2 /$ 250 kPa	R;EdYbiF b 60	n(tx'&U"R 100	xb~8uD5 140
k]9v${Ke IL20M-500k-A/GXX	!omf>CW;ud 500 kPa	XPQY*.l&. 60	%d"d<pvx 100	3r-oZ8/n 140
o-_H+p6a IL20M-01M0-A/GXX	k~=_]sLn 1.0 MPa	%$CV?K$C 60	wY6m^g$h3 100	GPs// 140
] g]^^ IL20M-10M0-A/GXX	EwKFT FL 10.0 MPa	OT{cP3;0*o 200	ztb?4f q6) 250	T_/ n#e 300
I$HO[Z! IL20M-40M0-AXX	AD^Q`7K?uR 40.0 MPa	-h8@B+ 230	]<Kkq! 290	JsD\|igqF- 350
Sahz*f High Stability Line STARe, Piezoresistivechips for pressure measurements of 60 mbar to 400 bar
?3=y]Vb+ HS20V-06k0-A/G/D05	I)wc&>Lc 6 kPa	yeqHeZ 60	m;@8z[ ^5 100	-fCR^`UOS 140	$1}Y4>3 mV@5V
&ku.Q3xGs HS20V-10k0-A/G/D05	^LAnR>mz^r 10 kPa	]wm<$+@ 60	!@3"vd{^ 100	5VZZk%oy 140
F0x'^Z}Q; HS20L-35k0-A/G/DXX	&5d~ODO 35 kPa	vef9*u` 60	!hWS%m@ 100	:`>bh 140
( we)0AxF' HS20L-100k-A/G/DXX	+*L<"@ 100 kPa	[]b= xRJM 60	Ym\|%ka 100	GW,RE\Q: 140
/^hc8X HS20M-250k-A/G/DXX	jT=fq'RK 250 kPa	^2C \--=; 60	R1vuf*A5, 100	Q4ZKgcC 140
.OcI.1H[ HS20M-500k-A/G/DXX	"DvhAEM 500 kPa	P"f4`q 60	*3\Nj6 100	q1pB~eg5 140
\|'qvq/#^ HS20M-01M0-A/G/DXX	= P$Q;d 1.0 MPa	~yiw{:\ 60	V@o#" gZ 100	=*{Ii]D 140
i F \H HS20M-03M0-A/G/XX	/tj_WO_ 3.0 MPa	"</A)y& 60	=z!/:M 100	{uN-bl?o 140
[\-)c[/ HS20M-10M0-A/GXX	RQYD#4\| 10.0 MPa	@{{6Nd5 200	wC?>,LOl 250	MO@XbPZB 300
moRo>bvN~ HS20M-20M0-A08	^h!}jvqE 20.0 MPa	K_F"j!0 60	`Wd4d2aLG 100	b_f"(l8'S 140
Q zp!)i HS20M-40M0-A08	?=G{2E. 40.0 MPa	x Nb7VUV7 60	tMH2 100	L~Y^O`c 140
(_]D\g~ Harsh Environmental Line, Piezoresistivechips for pressure measurements of 2 bar to 16 bar
*alifdp HE11C-200K-AXX	P'^& SK 200 kPa	p z\8Bp}yo 60	HCT+.n6 100	'^`iF,rg 140	t;V^OGflv mV@5V
?[;>1+D HE11C-400K-AXX	7(d#zu6n 400 kPa	}W0_eQ 60	k}C4:?AT 100	3_8W5J3I 140
\k{d'R#~( HE11C-800K-AXX	4~Y?*\|G]m 800 kPa	'61>.u:2 60	4~1lP& 100	!v8](UI8- 140
/>wE[` HE11C-01M6-AXX	.FN 6/N\ 1.6 MPa	=]S,p7*7 60	+8Y\|kC{9" 100	Ehxu`>@N 140

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