新势力光电供应雪崩二极管

新势力光电供应雪崩二极管（APD，Avalanchephotodiodes），是一种内部增益机制的光电二极管：蓝光增强型、红光增强型、红外增强型（900nm、1064nm）。该系列雪崩二极管应用广泛，包括：安检设备、激光测距、运动控制、分析仪器、生物医疗、光通信、军事、航空航天、光通讯。备注：如果采购数量10片以上，新势力光电提供配套的驱动电路模块。

.k,Jt+ Series 11: Blue sensitivity enhanced (forbiomedical applications)
Cz@FZb8 Order #	plx/}ah8 Type		Yuo1'gE+ Active Area		2K rqY Dark Current	[AX"ne#M* Rise Time
	dH2]ZE0V Chip	3$N %iE6 Package	"bR'Bt Size	Sm$j:xw< Area	3P#+) F~ M=100	vDW&pF_eI> 410nm 50Ω
	dH2]ZE0V Chip	3$N %iE6 Package	W`u$7k]$ mm	AX!>l; mm2	r=DHt&x= nA	<L/M`(:=k ns
}WO9!E( 500970	9R@abm,I AD800-11	5B>Q6 TO52S1	oB0 8 Ø0.8	7^I$%o1g 0.5	UOu6LD/\|h 1	&7($kj 1
mC:X4l]5 500967	p584)"[*t AD1900-11	0n*rs=\VG TO5i	L8:]`MQ0 Ø1.95	0Q$~k 3	pymx\Hd, 5	4ypRyO 2
R2N^' Series 12: Red sensitivity enhanced(cut-off frequency up to 3 GHz)
EvqUNnjR Order #	}2Cd1RnS Type		@TA8^ND Active Area		BZJKiiD Dark Current	}O.LPQ0 Rise Time
	K5!";V Chip	]{\|fYt_- Package	(\|<h^] y3 Size	&@4.;u Area	Lf^5Eo/ 5A 660nm M=100	Nt zq"ces) 660nm 50Ω
	K5!";V Chip	]{\|fYt_- Package	N b3I%r mm	~VqFZasV mm2	zP:~O A/W	^91sl5c8yD GHz
TRgY:R_ 501828	J4gI=@e AD100-12	G-\<5]k] LCC6.1	<`c25ih.4 Ø0.1	OgEUq'' 0.008	S9G8aea/ 50	j`2B}@2 typ.3, min.2
e=gboR 501829	uX[O,l^} AD100-12	#0P!xZ'\|{ LCC6.1f	=<[7J]% Ø0.1	YO@hE> 0.008	fDU+3b 44	hz<\|W5 typ.3, min.2
UvPp~N7, 501831	M MAAHo AD100-12	DH\wDQ TO52S1	OlEpid'Z Ø0.1	,'FD}yw4v 0.008	Az U\|p 50	4@DVc7\x$ typ.3, min.2
*-9#/Cp 501157	IIq"e~"Vs AD230-12	RRx`}E9, LCC6.1	n&_YYEHx Ø0.23	<9@&oN+T 0.042	Z,0O/RFJ.q 50	HG3.~ 6X typ.3, min.2
`6rrXU6\| 501156	Jb_=j) AD230-12	oz%h)#; LCC6.1f	B^Xy0fq Ø0.23	{hxW,mmA 0.042	54=}GnZN 44	-"F0eV+y typ.3, min.2
65lOX$*{- 501820	q^u1z\|'Z AD230-12	ER{yuw LCC6.1f	ZR1+ O8 Ø0.23	HKpD2M 0.042	w3<Z?lj: 44	9U]pH%.9 typ.3, min.2
>P(eW7RL 501162	wOjv[@d AD230-12	!loO%3_) TO52S1	D2Y&[zgv Ø0.23	~Y% : 3 0.042	j\! e9M 50	GL/ KB typ.3, min.2
GXO4x\|08F 501155	LxB&7 AD500-12	DK)u)?! LCC6.1	JdtPY~k0 Ø0.5	!@( M_Z' 0.196	Wt(Kd5k0'2 50	/;DjJpwf0 typ.3, min.2
o1U}/y+R\ 501154	# 2d,U\_ AD500-12	7O:"~L LCC6.1f	0"TgLd Ø0.5	3a%xn4P 0.196	[1<(VyJ}ye 44	Ex6o=D2 typ.3, min.2
'X54dXS?l 501819	6zuze0ud AD500-12	sqT^t! LCC6.1f	?<E0zM+ Ø0.5	2@fa rx: 0.196	B9}E {)T? 44	~,T+JX typ.3, min.2
XYts8}y5 501163	au}s=ua~i AD500-12	Ym'7vW#~ TO52S1	Gp,'kw"I Ø0.5	xLZbU4 0.196	\|!oXvXU 50	o'96ON0 typ.3, min.2
Y5n>r@)m Series 8: Optimized for high cut-offfrequencies-850 nm (optimized for high speeds)
M"B@M5KT Order #	b)Tl* Type		\p3v#0R{ Active Area		)&Mq,@ Dark Current	u7[pLtOwN Rise Time
	g**5z'7 Chip	i$["aP~G Package	BR3wX4i\ Size	?T <rt Area	lQWBCJ8y M=100	{<!hlB M=100 20V 50Ω
	g**5z'7 Chip	i$["aP~G Package	:kt/$S^- mm	FD))'!> mm2	#hy+ L nA	\WX@PfL ns
[EruyWK 501810	R B%:h-t4 AD100-8	&y\igX1 LCC6.1	aDh\|48}X Ø0.1	?^. Pt 0.008	"O``7HA} 0.05	8+ hhdy*b <0.18
Cx,-_ 501811	a5 bPEJ=I AD100-8	{"t5\U6cKM LCC6.1f	{:$NfW Ø0.1	<%&_#<C) 0.008	;?`@"YG) 0.05	[4: Yi{> <0.18
MnS+nH!d 501812	}#bZ8tm& AD100-8	^7^2D2[ LCC6.1f	{mf.!Xev Ø0.1	5NFRPGYX 0.008	c 6q/X* 0.05	a ea0+,; <0.18
Why"G1` 500011	a'A s AD100-8	x,uBJ TO52S1	[<S^c[47U Ø0.1	?Sw /(}\|m 0.008	x_W3sS]ej 0.05	ZB0+GG\ <0.18
mLaCkn 501171	AqqHD=Yp AD100-8	O5OXw] TO52S3	Bq{]Eh0% Ø0.1	6klD22b2$ 0.008	)#PtV~64 0.05	Km"&mT $ <0.18
jzMg'z/@J 501078	N%*9&FjrL AD230-8	@ t\|3gF$X LCC6.1	0ERsMnU' Ø0.23	3Y(9\}E@` 0.04	5zVQ;;9 0.3	#fj[kq)&S 0.18
`-u7 I 501079	,2_w=<hq AD230-8	2`E!\|X LCC6.1f	`0z/BCNB Ø0.23	`@MPkCy1 0.04	\OA L Or 0.3	Wp`C:H 0.18
#h{Nz/h+ 501805	xG w?'\ AD230-8	o$t &MST?i LCC6.1f	l1DI*0@ Ø0.23	N3Z@cp 0.04	F^miq^K= 0.3	Z)5klg$c 0.18
?b"Vj+1:x 500019	3>M.]w6{ AD230-8	*F\|+2?a:$ TO52S1	}_]As}E Ø0.23	gwJ}]Tf 0.04	\imp7}N 0.3	*_#&"(P 0.18
u uSHCp 500022	=1IEpxh% AD230-8	o6\|"J%9GX TO52S3	jr:drzr{I Ø0.23	*w\|iu^G 0.04	RQ\|?Ce", 0.3	CC>($k" 0.18
qsTq*G 501496	JSRg?p\ AD230-8	#<UuI9 ODFN2x2	R}hlDJ/m- Ø0.23	jceHKl 0.04	:v#8O~ 0.3	r_q~'r35_ 0.18
wR(ttwxK3 501077	<ZV7\|'^ AD500-8	f}%sO LCC6.1	a}w&dE$!- Ø0.5	)%BT*)x 0.2	^(J-dK 0.5	{o {#]fbO% 0.35
'z~KTDX 501076	6# R;HbkO AD500-8	=O,e97 LCC6.1f	GajI\_o Ø0.5	}FZp840 0.2	*5^ze+: 0.5	GV=V^Fl . 0.35
F=VoFmF@ 501809	ONNW.xHp AD500-8	?o@E1:aA LCC6.1f	[\|jIC Ø0.5	?nY/, q& 0.2	$:P[v+Uy 0.5	L^&do98 0.35
N*? WUn9] 500030	)2/b$i,JKk AD500-8	I ;l`VtD TO52S1	gl Li Ø0.5	D8W(CE^} 0.2	wH#Lb@cfZ0 0.5	\/pVcR 0.35
R+C+$?4NG 500305	W%w82@' AD500-8	N#mK7\|\c?: TO52S2	;>sq_4_ Ø0.5	oA[2)BU 0.2	Y/#:)(&@ 0.5	H9/XW6W,"w 0.35
Af$0 o=". 500155	H#_}^cGPR= AD500-8	v!iWzN TO52S3	-0/=k_q_ Ø0.5	+ESX.Vel 0.2	Idt@Hk5<& 0.5	+W!'B r 0.35
P"U>tsHK: 500947	4{c`g$j> AD800-8	;9 lqSv/6 TO52S1	I):m6y@ Ø0.8	4c~*hMry 0.5	}6F_2S3c 2	s#M? tyhj 0.7
"~B~{ _<j 501117	bwv/{3G,Ys AD1100-8	W5M ] TO52S1	3ZLr"O1l) Ø1.13	d91I 1	/2=_B4E2 4-6	=lw4 H_ 1
}S1Z>ZA5 500015	HE8'N=0 AD1900-8	3(>(lk TO5i	WlF+unB!9 Ø1.95	`<. 7? 3	2y&_Z^kI? 15	ot&j HS' 1.4
ayB=\|*Q" 501194	dfYYyE AD3000-8	Ih9ORp7 TO5i	f]O5V$!RuE Ø3	+-xSuR, 7.07	:Q0?ub] 30	ZdJVs/33Vn 2
n#/U@qVgc 500160	>"2\D\|-/ AD5000-8	TPN:cA6[c TO8i	7=9A_4G! Ø5	BZnp #}f 19.63	Ep#<$6> 60	d\|D'&&&c 3
9P,A t8V( 500002	98"z0nI% AD230-8-2.3G	w>1l@%Uo TO5	dK- ^ AD230-8-2.3GTO5 is a high frequency optical data receiver comprising an Avalanche SiliconPhotodiode and a transimpedance amplifier in a hermetically sealed TO5package.
=N[V{2}q 500003	v)v{QNQp^ AD500-8-1.3G	\|1\dCE03} TO5	.~V".tZV[ AD500-8-1.3GTO5 is a high frequency optical data receiver comprising an Avalanche SiliconPhotodiode and a transimpedance amplifier in a hermetically sealed TO5package.
soFvrl^Ql+ Series 9: NIR sensitivity enhanced-900nm(specifically for LIDAR and laser rangefinders)
S]#=ES'^/ Order #	`SSP53R(0 Type		NoSqzJyh Active Area		~0Q\Lp); Dark Current	Xm0&U?dZB Rise Time
	GSUOMy[M- Chip	wUZ(Tin Package	GT1 X Size	.yHHogbt Area	OmoplJ+ M=100	7oqn;6<[>, M=100
	GSUOMy[M- Chip	wUZ(Tin Package	sbq44L) mm	z?IY3]v*z< mm2	}hObtAS nA	gzJ{Gau{) ns
4u{E D( 501815	#7cf 8y AD100-9	8m13M5r LCC6.1	qNuv?.7 Ø0.1	@zq\z$ 0.008	iX9[Q0g=oQ 0.1	=c5 /cpZ^ <0.5
l,FG:"`Z@ 501816	L;(3u' AD100-9	Rp4BU"&sU LCC6.1f	* zJiii Ø0.1	>x_:=%Wr+ 0.008	=>9.@`. 0.1	S\|u1QGB <0.5
a\HtxR8L 501123	?-6x]l=] AD230-9	EssUyF-jwU LCC6.1	[b)K@Ha Ø0.23	QeOt;{_\| 0.04	*F4G qX3 0.5	R~seUW7uv" 0.5
$BO}D 501817	1H2u,{O AD230-9	.tHv4.ob LCC6.1f	3\U,Kg Ø0.23	f^yLwRUD 0.04	fU){]YP 0.5	*MyS7< 0.5
\5L4* 500020	uhN(`E@ AD230-9	%_X[{( TO52S1	HU.6L'H* Ø0.23	@0@'6J04 0.04	)*QTxN 0.5	J Wyoh\| 0.5
%+OPas8C 501265	pa> 2JF* AD230-9	4>ce,*B1 TO52S1F2	G QB^ Ø0.23	(k HQKQmq 0.04	~>-;(YU"t 0.5	1J%qbh 0.5
kpMM%"=V 500023	V/[,1W[B AD230-9	fm2Mi~}0 TO52S3	0{Ll4 Ø0.23	_/w-gL{ 0.04	+H^V},dBp! 0.5	$4~}_phi 0.5
M&\?)yG 501122	l$_+WC*wp AD500-9	C5n=2luI_ LCC6.1	^Th"`Av5 Ø0.5	,8 NEnB 0.2	M>z7H"jCu 0.8	B+H9c~3$ 0.55
?kxWj(D 501818	Xq)%w#l5? AD500-9	*L8HC8IbH LCC6.1f	#3[b\|cL Ø0.5	GpQF* x 0.2	9TN5\|x 0.8	8}E(UsTa 0.55
.Qw@H#dtW 500031	^{+:w:g AD500-9	>u#VHaB TO52S1	< 3+&DV-<N Ø0.5	rxk{Li<9 0.2	A =#-u&l 0.8	imq(3? 0.55
Q>c6ouuJ 500590	e(% Solkm? AD500-9	YqCK#zT/ TO52S1F2	8t \> Ø0.5	/+U)!$zm* 0.2	H 1X]tw. 0.8	Sg~A'dG 0.55
}? '9L: 500306	2/q=l? AD500-9	q;~>h TO52S2	&_hCs![ Ø0.5	0BD((oNg 0.2	;<R_j%* 0.8	ga9:*G!b{) 0.55
tBUQf*B 500156	x`l; ; AD500-9	.TS=[WGMS TO52S3	]+7c1MB(5 Ø0.5	V/%;:ul. 0.2	",_ 0.8	oT{yttSNo 0.55
O!Cu.9} 501196	GlD'?Mk1 AD800-9	wo9f99 TO52S1	-)+DVG.t Ø0.8	<&Xq`i/( 0.5	uL AXN 2	9?,.zc^ 0.9
m6<0 hP 501197	!_!b\ AD1100-9	; O0rt1 TO52S1	Sylsp%A Ø1.13	dph6aN(49 1	_\;#a 4	`I{Q,HQ7 1.3
CxQ,yd;> 501208	>iJuR.:OO AD1500-9	umn^QZ, TO5i	t+q`h3 Ø1.5	l);8y5 1.77	dF]8>jBOL 2	gi >{`.] 2
>vy+U 501198	R?SHXJ%' AD3000-9	.w)t<7 y TO5i	^`?> Huu<w Ø3	+[`%b3Nk 7.07	1`\kXaG 30	/MtacR 2
/=}vPey 500161	tpK4 gjf AD5000-9	KVy5/A/8c TO8i	#::vMnT Ø5	B[V=l<J 19.63	W7"sWaOhW 60	gv-k}2u_ 3
Ts6X:D4, 500756	B35f5m7r AD230-9-400M	&X(-C9'j TO5	oFp&j@`k8j AD230-9-400M-TO5 is a high frequency optical data receivercomprising an Avalanche Silicon Photodiode and a transimpedance amplifier ina hermetically sealed TO-5 package.
Z.JTq~`I 500490	lsi8?91 AD500-9-400M	SbivW5\|61 TO5	=1capix 1r AD500-9-400M-TO5 is a high frequency optical data receivercomprising an Avalanche Silicon Photodiode and a transimpedance amplifier ina hermetically sealed TO-5 package.
`<d>C}9 Multi-Element Array
)_?$B6hf,& 501099	@eWx4bl 8AA0.4-9	k>`X! " SOJ22GL	]plC APD Array 8 Elements, QE>80% at760-910nm with NTC
q4=RE 501098	xd@DN;e 16AA0.13-9	)' #(1 ,1k SOJ22GL	}Jfo(j APD Array 16 Elements, QE>80% at760-910nm with NTC
h@d m:=ul 500038	Qrh9JFqdG6 16AA0.13-9	[4e5(!e DIL18	&EOh}O< APD Array 16 Elements, QE>80% at760-910nm
{9MYEN}FO 501097	%?jf.p*kY 16AA0.4-9	V^i3:' SOJ22GL	KK6YA APD Array 16 Elements, QE>80% at760-910nm
y]_DW6W 50130802	$Vzfhj-if 25AA0.04-9	u@B"*V~K BGA	r "R\ APD Array 25 (5×5) elements, QE>80% at760-910nm with PTC
7SCI_8` 50130802	.$iIr:Tc> 25AA0.16-9	x?IT#ty BGA	tDo0Q/` APD Array 25 (5×5) elements, QE>80% at760-910nm with PTC
f/ZE_MN2 50130702	lLhCk>a 64AA0.04-9	uM8gfY)OI BGA	"K<VZ APD Array 64 (8×8) elements, QE>80% at760-910nm with PTC
4SYN$?.Mp 501207	:w+Rs+R QA4000-9	5hAg*zJb5o TO8Si	\2jY)UrQs Quadrant Avalanche Photodiode, QE>80%at 760-910nm
l;uEw Series 10: NIR sensitivity enhanced -1064nm (specifically for laser rangefinders, targeting systems or anyapplications using YAG lasers or similar NIR radiation sources)
J"y@n~*0 Order #	z0sB*5VH Type		"^H+A-R[ Active Area		@j6D#./7j Dark Current	hd\#Vh(H Rise Time
	u#\3T>o%@ Chip	]Gr'Bt/ Package	MYDSkW Size	5h1j.t! Area	Gu=Rf`o M=100	mI# BQE`p6 M=100 1064nm
	u#\3T>o%@ Chip	]Gr'Bt/ Package	5 Jhl4p}w mm	\|1D`v9 mm2	Ogb_WO;) nA	S,H{\c ns
RjDFc:bB 500953	yrjm0BM# AD500-10	u2t<auE9^ TO5i	jhLh~. 8 Ø0.5	$sJn: 8z 0.2	&a`-NRU# 1.5	9c6=[3)V 4
[>-k(D5D 501233	H2]I__t/u AD800-10	^{w&&+#,q TO5i	g@Zc'g/XB Ø0.8	? _W*7< 0.5	S;])Nt'X' 3	6]Jv3Re'(I 5
N]duv~JS 500883	ciTQH (G AD1500-10	GYYro&aq{ TO5i	MWl@smRh Ø1.5	JI^w1I, T 1.77	P}5aN_v\ 7	78%2#;;G 5
SCjACQ}- 50123401	9hv\%_>o AD4000-10	2C-u2;X2 TO8Si	bYtF#Y Ø4	]HRZ9oP 12.56	; H3kb + 50	g5E]o) 6
%VMazlM15 501387	)"1D-Bc\Q AD800-10	h %nZKhm TO8S	J=$v+8&. High speed, high gain, low noise, lowpower consumption hybrid (AD800-10+TIA)
\|"mb59X Multi-Element Array
8{ep`$(K@ 501174	/EC m QA4000-10	"%Jx,L\f{ TO8Si	t~AesHZpk Quadrant Avalanche Photodiode, High QE at850-1070nm

如有需要，可直接联系我们，也可以登录官网查找所需要的产品：
网址：http://www.newopto.com
邮箱：Sales@NewOpto.com
手机：188-5711-5252
电话：0571-85152711

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