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newopto 2014-11-13 11:40

新势力光电供应雪崩二极管

新势力光电供应雪崩二极管（APD，Avalanchephotodiodes），是一种内部增益机制的光电二极管：蓝光增强型、红光增强型、红外增强型（900nm、1064nm）。该系列雪崩二极管应用广泛，包括：安检设备、激光测距、运动控制、分析仪器、生物医疗、光通信、军事、航空航天、光通讯。备注：如果采购数量10片以上，新势力光电提供配套的驱动电路模块。 @Q ~; @M  
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Series 11: Blue sensitivity enhanced (forbiomedical applications)
a $'U?%  
Order #		 8_`C&vx  
Type		 qu $FpOJ  
Active Area		 zD8$DG8  
Dark Current		 o\Fv~^  
Rise Time
M"K$.m@t  
Chip		 # 7d vT=  
Package		 yNwSiZE X  
Size		 CcV@YST?  
Area		 6_yatq5c  
M=100		 Bmt8yR2  
410nm 50Ω
c(8>oeKyD  
mm		 P $ h) Y  
mm2		 L* 6<h  
nA		 n3U| d+  
ns
 C. uv0  
500970		 n?q+:P  
AD800-11		 9w&CHg7D i  
TO52S1		 W95q1f# 7  
Ø0.8		 gV:0&g\v  
0.5		 0%\fm W j  
1		 i[.7 8K-s  
1
I-J%yutB  
500967		 &DtI+ )[|  
AD1900-11		 =:R${F  
TO5i		 Ae^4  
Ø1.95		 @#o 7U   
3		 X9" T(`  
5		 ~% ]V,-4  
2
i6;rh-M?.  
Series 12: Red sensitivity enhanced(cut-off frequency up to 3 GHz)
p!Tac%D+k  
Order #		 kwS[,Qy\  
Type		 Ew{N 2  
Active Area		 %%wngiz\  
Dark Current		 7n;a_Z0s$  
Rise Time
R[vX+d!7  
Chip		 RJT55Rv{  
Package		 0,__{?!  
Size		 'rfs rZ?  
Area		 O7&OCo|b%>  
660nm M=100		 @ K2Ncb7  
660nm 50Ω
3XbFg%8YG  
mm		 l<"B[  
mm2		 eIP k$j{e  
A/W		 NLgeBLB  
GHz
8|hi2Qeu,c  
501828		 %$_?%X0=t  
AD100-12		  NY[48H  
LCC6.1		 .Z17X_  
Ø0.1		 0q1+5  
0.008		 K TE*Du  
50		 4dSAGLpp  
typ.3, min.2
`I|Y7GoUO  
501829		 +}-cvM/*  
AD100-12		 t#]VR7]  
LCC6.1f		 `\BBdQ#bH  
Ø0.1		 &(x>J:b  
0.008		 hNp.%XnnZ  
44		 ')fIa2dO/  
typ.3, min.2
HE2t0sAYX  
501831		 , d4i0;2}+  
AD100-12		 Z3Xgi~c  
TO52S1		 G6"4JTWO  
Ø0.1		 %+ MYg^  
0.008		 FQMA0"(G$  
50		 fX&g. fH  
typ.3, min.2
:3}K$  
501157		 <(~geN  
AD230-12		 $T2zs$  
LCC6.1		 ;/^O7KM-  
Ø0.23		 D6FG$SV  
0.042		 6<n+p'+n  
50		 wS:`c J  
typ.3, min.2
QVN @B[9  
501156		 X=JAyxY  
AD230-12		 Fi+,omB&  
LCC6.1f		 3SOrM  
Ø0.23		 .ityudT<  
0.042		 >PygUY d  
44		 bgmOX&`G  
typ.3, min.2
n]wZ7z  
501820		 "&kXAwe  
AD230-12		 X*:)]p(R  
LCC6.1f		 ?kc,}/4  
Ø0.23		 'KNUPi|  
0.042		 qI\B;&hr(  
44		 xx%*85<  
typ.3, min.2
bEzy KrN\  
501162		 M5LqZyY  
AD230-12		 ;cWFh4_  
TO52S1		 NVo =5  
Ø0.23		 N5fMMi(O  
0.042		 qIgb;=V  
50		 7:S)J~s*O  
typ.3, min.2
_57 68G`P  
501155		 &eX^ll  
AD500-12		 2` h  
LCC6.1		 HBgt!D0MZ  
Ø0.5		 Pexg"328  
0.196		  *U4eL-  
50		 S 5nri(m  
typ.3, min.2
/ =:X,^"P  
501154		 ("@ih]zYf  
AD500-12		  qr7_3  
LCC6.1f		 q^kOyA.  
Ø0.5		 N7qSbiRf<  
0.196		 H52] Zm  
44		 +Tp>3Jh2  
typ.3, min.2
ob>2SU[Y  
501819		 ?bK^IHh  
AD500-12		 x-s]3'!L  
LCC6.1f		 r}])V[V  
Ø0.5		 e@crM'R7Lo  
0.196		 t{ScK%S6  
44		 `Jon^&^;|  
typ.3, min.2
mmgIV&P  
501163		 S4(lC%$|  
AD500-12		 1C\[n(9  
TO52S1		 ?e!mv}B_  
Ø0.5		 VSa#X |z  
0.196		 #+Cu&l  
50		 '>5W`lZ  
typ.3, min.2
4o*wLCo7^  
Series 8: Optimized for high cut-offfrequencies-850 nm (optimized for high speeds)
xD<:'-ri>  
Order #		 SdBo sB3v>  
Type		 ;3WVrYe  
Active Area		 'I roQ M  
Dark Current		 IHtNaN )  
Rise Time
]l4# KI@  
Chip		 Zo|# ,AdE>  
Package		 qY$/i#  
Size		 zHvG3Ed@  
Area		 Vi1= E])  
M=100		 w#M66=je_  
M=100 20V 50Ω
-*Z;EA-  
mm		 !Wz%Hy:ZK  
mm2		 d'Z  
nA		 w qLY \  
ns
VdV18-ea  
501810		 =tE7XC3X_  
AD100-8		 yb:Xjg7   
LCC6.1		 c31k%/.  
Ø0.1		 u*J,3o} <  
0.008		 J}cqBk>  
0.05		 kG>d^K  
<0.18
CPCjY|w7   
501811		 ki[Yu+';}  
AD100-8		 4 u!)QG  
LCC6.1f		 IirXF?&t  
Ø0.1		 fQ[ GN}k  
0.008		 MjW g  
0.05		 g~JN"ap  
<0.18
nT.2HQ((Xg  
501812		 H#l uG_)  
AD100-8		 ({}JvSn1  
LCC6.1f		 Z&!5'_9{V  
Ø0.1		 P=%' 2BQ{{  
0.008		 " E U[Lb  
0.05		 5[_|+  
<0.18
vf+GC*f  
500011		 J`*!U4  
AD100-8		 M/X&zr  
TO52S1		 1 \_S1ZS  
Ø0.1		 mPy=,xYyC  
0.008		 `|\z#Et  
0.05		 *0GR }k  
<0.18
s6|Ev IVM  
501171		 Rs<li\GS  
AD100-8		 INFbj8T  
TO52S3		 spE(s%dgL  
Ø0.1		 V]V~q ]  
0.008		 e==}qQ  
0.05		 '7UW\KEB[}  
<0.18
I'M,p<B  
501078		 #R<ErX)F  
AD230-8		 qd=&*?  
LCC6.1		 :qbbo~U  
Ø0.23		 1d4?+[)gUv  
0.04		  ahno$[  
0.3		 -Q6njt&  
0.18
H]7MNY  
501079		 u!FX 0Ip  
AD230-8		 ~9N n8g6  
LCC6.1f		 GS %ACk  
Ø0.23		 l cHqg  
0.04		 h#ogL-UU  
0.3		 .]_ (>^6  
0.18
h7iI=[_V  
501805		 "Cz8nG  
AD230-8		 DeTx7i0  
LCC6.1f		 6tC0F=  
Ø0.23		 BM_hW8&G  
0.04		 C 'YL9r-G  
0.3		 e_Ue9c.}  
0.18
>}tm8|IHoo  
500019		 )*=ds ,  
AD230-8		 .""?k[f5Q  
TO52S1		 Sz.sX w;  
Ø0.23		 +}eGCZra  
0.04		 T2Q`Ax7  
0.3		  F'!pM(+  
0.18
\OV><|Lkh  
500022		 IUt/V^  
AD230-8		 ,i>{yrsOh  
TO52S3		 S${n:e0\  
Ø0.23		 jA&ZO>4  
0.04		 z+RA  
0.3		 O$=[m9V  
0.18
N,F mu  
501496		 ^EK]z8;|  
AD230-8		 [8F1rZ&  
ODFN2x2		 {tq.c9+!d  
Ø0.23		 >5rb4  
0.04		 EDMuQu/D8  
0.3		 #GTR}|Aga  
0.18
6Qo YX] .  
501077		 UMcQqV+vT  
AD500-8		 `Bw>0%.  
LCC6.1		 8zDLX,M-  
Ø0.5		 `eD70h`XK  
0.2		 &:K!$W  
0.5		 I ,j,H z0  
0.35
=l7@YCj5c  
501076		 kx6AMx!nX  
AD500-8		 #H0-Fwo  
LCC6.1f		 p_^Jr*Mv  
Ø0.5		 /$w,8pV =  
0.2		 yK1@`3@?  
0.5		 m?Tv8-1  
0.35
wZ&l6J4L  
501809		 ?Xdb%.   
AD500-8		 (gdi 2  
LCC6.1f		 4^3}+cJ7j  
Ø0.5		 S!'Y:AeD&  
0.2		 s7"NK"  
0.5		 Pv- i.  
0.35
RM\A$.5  
500030		 Aoi) 11>  
AD500-8		 >s 5i  
TO52S1		 v- 793pr  
Ø0.5		 q9)]R  
0.2		 8>\tD  
0.5		 2=\} 0  
0.35
7?U)V03  
500305		 ';>]7oT`  
AD500-8		 DJ zJ$Q  
TO52S2		 xaPaK-  
Ø0.5		 zJ"`40V*;  
0.2		 |n*nByL/  
0.5		 %< ^IAMkp  
0.35
r]sN I[  
500155		 -~Ll;}nZC  
AD500-8		 W 'w{}|  
TO52S3		 ^~ 95q0hq:  
Ø0.5		 F,[GdE;P  
0.2		 W(gOid KKz  
0.5		 ?RP&XrD  
0.35
pXoD*o b  
500947		 4r+@7hnK  
AD800-8		 bR\Oyd~e  
TO52S1		 I_dO*k%l  
Ø0.8		 o_i N(K  
0.5		 MWl2;qi  
2		 xWiR7~E  
0.7
*eF'<._[U  
501117		 A$7j B4  
AD1100-8		 V*Q!J{lj^#  
TO52S1		 `X8wnD  
Ø1.13		 pO_$8=G+  
1		 qh]D=i  
4-6		 iAl.(j  
1
*!m\%*y{  
500015		 'vP"& lrn  
AD1900-8		 K Y=$RO  
TO5i		 x\i+MVR-  
Ø1.95		 B7 #O>a  
3		 "9^OT  
15		 ~LfFLC  
1.4
P9W!xvV`w  
501194		 r.JM!x8  
AD3000-8		 w$evAPuz^  
TO5i		 ns&3Dh(IVP  
Ø3		 l^cz&k=+  
7.07		 Fd1t/B,  
30		 KHT RoXt  
2
o..iT:f;n  
500160		 L=_   
AD5000-8		 9<|nJt  
TO8i		 -T8'|"g  
Ø5		 N hY`_?)  
19.63		 HOr.(gL!  
60		 .3 S9=d?  
3
^&z3zFTp  
500002		 U>-GM >  
AD230-8-2.3G		 }~+q S`  
TO5		 U&'Xs z  
AD230-8-2.3GTO5 is a high frequency optical data receiver comprising an Avalanche SiliconPhotodiode and a transimpedance amplifier in a hermetically sealed TO5package.
=e"RE/q2  
500003		 x,fX mgE  
AD500-8-1.3G		 O4g2s8k  
TO5		 :5#iVa#<  
AD500-8-1.3GTO5 is a high frequency optical data receiver comprising an Avalanche SiliconPhotodiode and a transimpedance amplifier in a hermetically sealed TO5package.
[sXn B$  
Series 9: NIR sensitivity enhanced-900nm(specifically for LIDAR and laser rangefinders)
NtDxwzj  
Order #		 |I2~@RfpO:  
Type		 ;39~G T  
Active Area		 <ht^Ck  
Dark Current		 5{|tE!  
Rise Time
#ULzh&yO  
Chip		 <"z9(t(V\%  
Package		 }I"k=>Ycns  
Size		 Da)H/3ii  
Area		 iGw\A!}w\  
M=100		 p;<aZ&@O  
M=100
~j36(`t  
mm		 %%{f-\-7Ig  
mm2		 3>#io^35  
nA		 \ ^3cNw  
ns
Vwpy/5Hmp  
501815		 [+wLy3_  
AD100-9		 ,KaO8^PB  
LCC6.1		 El^V[s'3  
Ø0.1		 9!,f4&G`  
0.008		 Z&6*8#wn  
0.1		 G\B:iyKl  
<0.5
{O_`eS  
501816		 CTf39R|7_  
AD100-9		  bE%*ZB  
LCC6.1f		 &9 khIJI n  
Ø0.1		 )5ev4Qf  
0.008		 qpX`Z Y^  
0.1		 l}XnCOIT,  
<0.5
eEX*\1Gg  
501123		 m/"}Y]n!  
AD230-9		 om1D}irKT  
LCC6.1		 i{}Q5iy  
Ø0.23		 t&MLgu  
0.04		 F @uOXNz)  
0.5		 t]XF*fZH  
0.5
|6w {%xC?"  
501817		 Os[50j!4>  
AD230-9		 VX'G\Zz@h|  
LCC6.1f		 1v'|%B;O  
Ø0.23		 \^Z DH  
0.04		 8.tp#x,A  
0.5		 [W8?ww%qT  
0.5
|Li9Y"5  
500020		 B i`m+ob  
AD230-9		 xF`O ehVA  
TO52S1		 c{\x< AwO  
Ø0.23		 B18?)LA  
0.04		 Df}3^J~JX  
0.5		 WjF#YW\  
0.5
tREC)+*\  
501265		 r~;TId} #  
AD230-9		 %!V=noo  
TO52S1F2		 ?dQ#%06mn  
Ø0.23		 PHg(O:3WG  
0.04		 wyUfmk_}  
0.5		 ~?:Xi_3Lo  
0.5
AfJ.SNE  
500023		 ;s w3MRJ  
AD230-9		 f= 33+8I  
TO52S3		 P+(Ys[J3  
Ø0.23		 %VGQ{:  
0.04		 0r%,|FaS  
0.5		 ]MRQcqbpqL  
0.5
%s#`Z [8,  
501122		 3NlG,e'T2  
AD500-9		 G~19Vv*;  
LCC6.1		 y9-}LET3j  
Ø0.5		 c\N-B,m&  
0.2		 OIrr'uNH  
0.8		  2D"\Ox  
0.55
q Qc-;|8  
501818		 XO"BEj<x  
AD500-9		 m*\XH DB  
LCC6.1f		 G/?j$T  
Ø0.5		 j(`V& S  
0.2		 )Ga 3Ji}'  
0.8		 zHt}`>y&  
0.55
'-KrneZ!  
500031		 t zSg`7H!  
AD500-9		 /r mm@  
TO52S1		 P:tl)ob  
Ø0.5		 5: O,-b&  
0.2		 D3kx&AR  
0.8		 a?ii)GGq  
0.55
t?cO>4*|  
500590		 h2fTG  
AD500-9		 .LEn~ 8  
TO52S1F2		  o0Pc^  
Ø0.5		 4@ =l'Fw  
0.2		 6$"0!fl>  
0.8		 4f{(Scg  
0.55
} l4d/I  
500306		 B;mt11M  
AD500-9		 YF(TG]?6  
TO52S2		 mtu`m6Xix  
Ø0.5		 /?Fa<{  
0.2		 p?+*R@O  
0.8		 iPoDesp  
0.55
#.z`clK#  
500156		 +:fr(s!OE  
AD500-9		 Ib665H7w  
TO52S3		 rlIDym9nY~  
Ø0.5		 W2\ Q-4D  
0.2		 ;p}X]e l}  
0.8		 *K1GX  
0.55
t/9,JG  
501196		 'aoHNZfxw  
AD800-9		 s=xJcLA  
TO52S1		 crdp`}}  
Ø0.8		 (o5+9'y"9  
0.5		 ;+/[<bvd"  
2		 E5}wR(i,4  
0.9
>9v?p=  
501197		 (ON_(MN  
AD1100-9		 ,wvzY7%  
TO52S1		 '/"xMpN4  
Ø1.13		 NhDM h8=$^  
1		 VD*xhuy$k  
4		 ^?3e?Q?  
1.3
 #FfUkV  
501208		 ORo +=2  
AD1500-9		 )~X*&(7RR}  
TO5i		 ]JXpe]B  
Ø1.5		 /:j9 #kj  
1.77		 9-9:]2~g!  
2		 D>c-h)2|  
2
&E>zvRBQ  
501198		 xgeKz^,  
AD3000-9		 %hu] =  
TO5i		 8VwByk8  
Ø3		 ) !!xvyc  
7.07		 aDik1Q  
30		 'e(`2  
2
zmxrz[  
500161		 v<`1z?dch  
AD5000-9		 !:[kS1s>M  
TO8i		 #z\{BtK  
Ø5		 / !*gH1 s  
19.63		 [We(0wF[`  
60		 -k19BDJ,W  
3
hupYiI~  
500756		 h%Nbx:vKk  
AD230-9-400M		 J@{yWgLg  
TO5		 'ErtiD  
AD230-9-400M-TO5 is a high frequency optical data receivercomprising an Avalanche Silicon Photodiode and a transimpedance amplifier ina hermetically sealed TO-5 package.
TT429  
500490		 p[QF3)9F  
AD500-9-400M		 aQ ~  
TO5		 VxOrrs7Z  
AD500-9-400M-TO5 is a high frequency optical data receivercomprising an Avalanche Silicon Photodiode and a transimpedance amplifier ina hermetically sealed TO-5 package.
7^bO`  
Multi-Element Array
^ftZ{uA  
501099		 $ V"~\h8  
8AA0.4-9		 `'u|4pRFs  
SOJ22GL		 wR;_x x  
APD Array 8 Elements, QE>80% at760-910nm with NTC
;a+>><x]  
501098		 )>)_>[  
16AA0.13-9		 Ml)Xq-&wc  
SOJ22GL		 saH +C@_,  
APD Array 16 Elements, QE>80% at760-910nm with NTC
I3xx}^V  
500038		 2#nn}HEOC  
16AA0.13-9		 /Xi:k  
DIL18		 uOEFb  
APD Array 16 Elements, QE>80% at760-910nm
dG|srgk+  
501097		 ;bd\XHwMUP  
16AA0.4-9		 'M\ou}P  
SOJ22GL		 vm+EzmO,!  
APD Array 16 Elements, QE>80% at760-910nm
~e[)]b3  
50130802		 TA=Ij,z~  
25AA0.04-9		 l_LfVON  
BGA		 1$fA9u$  
APD Array 25 (5×5) elements, QE>80% at760-910nm with PTC
}k}5\%#li5  
50130802		 ru)%0Cyx  
25AA0.16-9		 YTq>K/  
BGA		 +MOUO$;fGt  
APD Array 25 (5×5) elements, QE>80% at760-910nm with PTC
4qjY,QJ  
50130702		 pTmG\wA~$  
64AA0.04-9		 +v&+8S`+  
BGA		 A 20_a;V  
APD Array 64 (8×8) elements, QE>80% at760-910nm with PTC
P/t$xqAL  
501207		 bdqo2ZO  
QA4000-9		 v}-'L#6  
TO8Si		 $$ \| 3rj!  
Quadrant Avalanche Photodiode, QE>80%at 760-910nm
D6_16PJE  
Series 10: NIR sensitivity enhanced -1064nm (specifically for laser rangefinders, targeting systems or anyapplications using YAG lasers or similar NIR radiation sources)
+98~OInySZ  
Order #		 2`t4@T  
Type		 1S\q\kz->D  
Active Area		 GVY_u@6   
Dark Current		 e&F,z=XJ}  
Rise Time
$|z8WCJ  
Chip		 QsI>_<r  
Package		 NK*~UePy  
Size		 vC\]7]mC  
Area		 V )1SZt@x  
M=100		 M&@9B)|=  
M=100 1064nm
.he%a3e  
mm		 Aye!@RjM8  
mm2		 ?mRU9VY  
nA		 ^#exs Xy  
ns
MsX`TOyO!  
500953		 ~|Gtm[9Ru  
AD500-10		 {:od=\*R  
TO5i		 5Z6$90!k  
Ø0.5		 &^qD<eZ!Eq  
0.2		 7Y @ &&  
1.5		 qN+ngk,:  
4
;% !'K~  
501233		 /$WEO[o  
AD800-10		 hRxR2  
TO5i		 @?G.6r~  
Ø0.8		 .\{GU9|nO  
0.5		 rt!5Tl+v  
3		 ~+QfP:G  
5
yWF DGk  
500883		 /S\P=lcb  
AD1500-10		 U $X"W'  
TO5i		 hM/|k0YV  
Ø1.5		 ,V.X-`Y  
1.77		 l>7`D3  
7		 VoWlBH  
5
C:l /%   
50123401		 ISa2|v;M  
AD4000-10		 j5G8IP_Wx  
TO8Si		 _CciU.1k&,  
Ø4		 c3Y\XzV3v  
12.56		 ^4_.5~(  
50		 iZwt,)(  
6
O9dIobu4  
501387		 NK~j>>^;v  
AD800-10		 } R;.~F  
TO8S		 loLQ@?E  
High speed, high gain, low noise, lowpower consumption hybrid (AD800-10+TIA)
/al(=zf  
Multi-Element Array
7^ITedW@  
501174		 >ys>Q)  
QA4000-10		 bezT\F/\  
TO8Si		 ;Bat!K7W  
Quadrant Avalanche Photodiode, High QE at850-1070nm
QDF1$,s4i  
q+>{@tP9  
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