新势力光电供应雪崩二极管

新势力光电供应雪崩二极管（APD，Avalanchephotodiodes），是一种内部增益机制的光电二极管：蓝光增强型、红光增强型、红外增强型（900nm、1064nm）。该系列雪崩二极管应用广泛，包括：安检设备、激光测距、运动控制、分析仪器、生物医疗、光通信、军事、航空航天、光通讯。备注：如果采购数量10片以上，新势力光电提供配套的驱动电路模块。

i_nUyH%b Series 11: Blue sensitivity enhanced (forbiomedical applications)
pp2 Jy{\d Order #	Iz&d S?p_ Type		3h6,x0AG Active Area		w9Nk8OsL Dark Current	s !II}'Je Rise Time
	M&e=LV Chip	0*j\i@ Package	q?8#D Size	h]4qJ Area	%D7'7E8. M=100	Y5*A,piq 410nm 50Ω
	M&e=LV Chip	0*j\i@ Package	YVk +zt~S mm	\*pS4vy5x mm2	QaXdO=3 nA	ca[*#xiJ ns
rLbFaLeQ 500970	)ri'W <l AD800-11	,t\|_Nc TO52S1	24fN3 Ø0.8	8jiBLZkRf 0.5	0\|{":i_s 1	(1'sBm7F 1
>n1UK5QD 500967	QwuSo{G AD1900-11	z;>O5a>z TO5i	Y"dTm;& Ø1.95	$H6ngL 3	>f;oY9 {m 5	R^.c 2
.:(gg Series 12: Red sensitivity enhanced(cut-off frequency up to 3 GHz)
VotI5O $ Order #	:]* =f]. Type		=wa5\p/ Active Area		5^Lbc.h Dark Current	Z#K0a' Rise Time
	@s\}ER3 Chip	VD{_6 Package	g}vU*g ; Size	~\zIb/ # Area	/#}%c' 660nm M=100	t'C9; 660nm 50Ω
	@s\}ER3 Chip	VD{_6 Package	t2qWB[r mm	RC!T1o~L mm2	eqpnh^0}d A/W	\|~=4ZrcCP GHz
0JhUncx 501828	uW,rmd AD100-12	Tn$\| Xa+:s LCC6.1	By<~h/uJ Ø0.1	O^R^Aw 0.008	n>%TIoY 50	\|^GN<y^cn typ.3, min.2
;;LiZlf 501829	1EHNg<J( AD100-12	ry4:i4/[ LCC6.1f	+jp^ Ø0.1	@Tsdgx8 0.008	6<UI%X 44	r\\|"j8 typ.3, min.2
d UiS0Qs} 501831	?=?9a AD100-12	puGy`9eKv1 TO52S1	E8We2T[^M Ø0.1	dr4m}v. 0.008	Uq2Qh@B 50	}5"19 Go? typ.3, min.2
l`{JxVg 501157	JI92Dc*o AD230-12	iHyA;'!Os LCC6.1	et}s yPH Ø0.23	!\|#1z}( 0.042	VHU,G+ms 50	pB,@<\l % typ.3, min.2
*\[GfTL 501156	B 6,X) AD230-12	!q*]_1 LCC6.1f	PPNZ(j Ø0.23	=+wkjTO 0.042	Yc V*3` 44	T<ekDhlr typ.3, min.2
+'?axv6e 501820	z^9df( AD230-12	t`A5wqm LCC6.1f	rjT!S1Hs Ø0.23	Xdc>Z\0V 0.042	SyR[G*djl 44	6.GIUM%D typ.3, min.2
FYeUz$/ 501162	C`C$i>X7^ AD230-12	ed7Hz#Qc TO52S1	9=;ETLL " Ø0.23	1)=sbFtS 0.042	)`]} D[j 50	!8>tT typ.3, min.2
.;9I:YB$ 501155	WqRg/ AD500-12	U}<;4Px]7v LCC6.1	nc%ly * Ø0.5	_ ;_NM5 0.196	Mo+HLN 50	d[I}+%{[ typ.3, min.2
&+Pcu5 501154	vc(6lN9> AD500-12	Z"G@I= Q( LCC6.1f	g4*]R>f Ø0.5	B^uQv\|m 0.196	l]o&D))R 44	Y$?<y typ.3, min.2
9l:Bum)9 501819	P$i?%P~ AD500-12	`l95I7 LCC6.1f	co!#. Ø0.5	*.9.BD9 0.196	YWPAc>uw, 44	3pKr {U92 typ.3, min.2
pV^hZ. 501163	r$~ f[cA AD500-12	CvtG TO52S1	Yj^n4G(h Ø0.5	M&iA^Wrs 0.196	9L'R;H?L 50	wA<#E6^vG typ.3, min.2
kiFTx &gf Series 8: Optimized for high cut-offfrequencies-850 nm (optimized for high speeds)
SD^6ib/]b Order #	OQON~&~ Type		"!6 Ax-' Active Area		dF%sD\|<) Dark Current	4X2/n Rise Time
	DKfw8"L] Chip	BJI R !J Package	z`D;8x2b Size	',yY Area	48BPo,nWR M=100	8j}CP M=100 20V 50Ω
	DKfw8"L] Chip	BJI R !J Package	fN TPW] mm	;Qc_Tf=, mm2	Q1Sf7) nA	?B2 T'}~ ns
CKv[E 501810	=%YU~ AD100-8	m4~Co*]w LCC6.1	e8@@Pi<sB Ø0.1	Zv*Z^; X9 0.008	PXk+Vi,%k 0.05	{%5tqF <0.18
b:nHcxDU< 501811	?2;r#) AD100-8	yU~OfwQ LCC6.1f	WX}"Pj/6 Ø0.1	.4"9o% 0.008	$gN1&K 0.05	J:,>/')n <0.18
X'Dg= \| 501812	Z4/rqU AD100-8	j\|&?BBa9 LCC6.1f	W,iSN} Ø0.1	?+S&`%? 0.008	1Ig@gdmz 0.05	[}\|-%4s <0.18
Z;aQ/n[` 500011	`n]y"rj' AD100-8	P"%i 4-S TO52S1	WVp7H Ø0.1	e}?#vTRI} 0.008	Z_Ox' 0.05	gg(^:`+ <0.18
L\8tqy. 501171	xr)Rx{)3h AD100-8	;K[`o/#4" TO52S3	z./M^7v? Ø0.1	[EDw0e 0.008	xQa[bvW 0.05	`J^J_s <0.18
'._8 501078	#e0tT+ AD230-8	@ba5iIt LCC6.1	N0h"EV[ Ø0.23	C26PQGo#$ 0.04	\eE0Rnaf- 0.3	W xyQA:3s 0.18
<`sVu 501079	MPMJkL$F^ AD230-8	<L@0w8i` LCC6.1f	>A\|6kzC Ø0.23	DNdwMSwp 0.04	9}Tf9>qP>M 0.3	XB-pOtVm 0.18
kIV/o 501805	_JA.~edqM AD230-8	Zr_{Z@IpU LCC6.1f	m,v"N%k, Ø0.23	W\|3XD-v@ 0.04	*A`hKx 0.3	-c!{';Zn 0.18
Pv{ {zyc 500019	iLn)Z0<\o AD230-8	JY#IeNL TO52S1	eMVfv=&L<3 Ø0.23	!SIGzj 0.04	u4NMJnX 0.3	S5E mLgnRs 0.18
d:O>--$_tw 500022	bp:WN AD230-8	"/6( TO52S3	:k075Zr/#D Ø0.23	D Y($ 0.04	l/`<iG% 0.3	a<FzHCw 0.18
zTBr<: 501496	)H#Hs<)Qy AD230-8	f.rz2)o ODFN2x2	&h-d\gMJ Ø0.23	~Rk%M$E9 0.04	a_m P$4T 0.3	XRKL;\|cd 0.18
fQlR;4QX] 501077	xA#B1qbw AD500-8	w"bQxS~$y LCC6.1	qih7 Ø0.5	&@c=$+#C 0.2	e//28=OH 0.5	Gk*Mx6\|N 0.35
=U!'v X d 501076	qi}HJkOq AD500-8	\szx.IZT LCC6.1f	fzRzkn:= Ø0.5	*f$mSI= 0.2	Y.3]vno?X 0.5	+?[TH?2c+ 0.35
Xdsd5 UUM 501809	#tKc!]m AD500-8	(ta!4h, LCC6.1f	bQow,vf Ø0.5	&4sUi K" 0.2	K!"[,=u_ 0.5	FJKt5}`8 0.35
3_B .W 500030	aAF:nyV~~0 AD500-8	hAHl+q)w? TO52S1	yJc<;Qx Ø0.5	_\>?.gg$ 0.2	%YM4x!6 0.5	gfw,S; 0.35
"2}04b\|" 500305	OqtQLqN AD500-8	W*e6F?G TO52S2	!m^;Apuy Ø0.5	pvQw+jX 0.2	`MlQPLH 0.5	'ADt<m_$ 0.35
49^;T;'v 500155	FF6[qSV AD500-8	rXuhd [!(P TO52S3	)TFaG[tj Ø0.5	YvHP]N{SA' 0.2	mS6 #\'Qa 0.5	kih;'>H< 0.35
ZOK2BCoW 500947	YH&`+ + AD800-8	)7Gm<r TO52S1	wAkpk&R Ø0.8	kq8:h 0.5	[94A?pn[z 2	]Vo;ZY_\ 0.7
m{x[q 501117	7f#e#_sM; AD1100-8	jxL}tS{j TO52S1	=LDzZ:' X Ø1.13	rQ(Aj 1	=21$U[ 4-6	MzL^u8 1
n@XI$>B 500015	F?\XhoJ3G AD1900-8	Q4Zuz)r* TO5i	ZZ?0%9 Ø1.95	' 7+x,TszI 3	gPh; 15	qc2j}D0 1.4
!'wh hi 501194	ST5L O#5 AD3000-8	('xIFi TO5i	C=IT`iom1C Ø3	rCGXHbj% 7.07	D+P( 30	Ci4`, 2
%i{Z@ 500160	P}29wrIZ AD5000-8	=,$*-<p=3 TO8i	Gole7I Ø5	L15?\\|':Y 19.63	kfr' P u 60	rn $a)^! 3
X0Zqx1 500002	B(7oHj.i2 AD230-8-2.3G	r/}q=J. TO5	C-E~z{ AD230-8-2.3GTO5 is a high frequency optical data receiver comprising an Avalanche SiliconPhotodiode and a transimpedance amplifier in a hermetically sealed TO5package.
jj_z#6{ 500003	< aJl i AD500-8-1.3G	x? tC2L TO5	_8A AD500-8-1.3GTO5 is a high frequency optical data receiver comprising an Avalanche SiliconPhotodiode and a transimpedance amplifier in a hermetically sealed TO5package.
U$v\|c%6 Series 9: NIR sensitivity enhanced-900nm(specifically for LIDAR and laser rangefinders)
v_mk{ Order #	p4GhT~)l: Type		cWjb149@) Active Area		0gO_dyB Dark Current	m0QE S Rise Time
	WfpQ Chip	J9eOBom8e< Package	J!Er%QUR Size	1/+d@s#t Area	VK*Dm:G0 M=100	KBE3q) M=100
	WfpQ Chip	J9eOBom8e< Package	5{Q5?M] mm	})W9=xO~ mm2	`NYu\|:JK: nA	OL]P(HRm]~ ns
2(LF @xb 501815	x1H1[0w,i AD100-9	\|y9(qcKn$ LCC6.1	m%m<-.'- Ø0.1	xfoQx_]$Im 0.008	]H\|O 0.1	"\| Oj!&0 <0.5
m}A\|W[p< 501816	fwQVxJe AD100-9	JguPXHa0 LCC6.1f	p0*qv"lA Ø0.1	z^lcc7 0.008	,ZGU\t 0.1	5~D(jHY; <0.5
G0#<SJ,) 501123	~,ZU+ AD230-9	<*JFY%y" LCC6.1	fg$#ZCi Ø0.23	/tm2b<G 0.04	')N[)&&Q{ 0.5	Kb X&E0 0.5
a-e_q 501817	&!P' M AD230-9	LMKhtOZ? LCC6.1f	#[f]-c(! Ø0.23	Z(j"\d!y 0.04	\|RjAp.pm 0.5	tGE=!qk 0.5
nTsKJX%\ 500020	'9{`Czc(Gb AD230-9	Tp46K\}Uf TO52S1	WwsH7X) Ø0.23	^H"o=K8= 0.04	u9nJ;: 0.5	X)e#=w!fi3 0.5
=6Fpixq> 501265	9xi nX-x;n AD230-9	r7)qr%n TO52S1F2	QC,fyw\ Ø0.23	(E;+E\E 0.04	xU/7}='T 0.5	{FQ@eeU 0.5
?(Se$iTZ 500023	.n n&K}h AD230-9	\sMe2OL#z TO52S3	Y~xo=v( Ø0.23	H*j!_>W 0.04	cY5w,.Q/! 0.5	]p8zT\|bv 0.5
xi51,y+(5 501122	3CzF@t;5 AD500-9	lihIPMU LCC6.1	NnH]c+ Ø0.5	VwudNjL 0.2	#x qiGK 0.8	[#=IKsO'R6 0.55
xa.tH)R 501818	O8OAXRt/Y AD500-9	7nm'v'\u+V LCC6.1f	JM1O7I Ø0.5	,ZghV1z 0.2	FnKC\|X 0.8	Fc#Sn2p* 0.55
?3lAogB 500031	!&xci})7a AD500-9	5(gWK{R)* TO52S1	M8Vc5 Ø0.5	6Df*wi!jI 0.2	Jz}`-fU` 0.8	SJ91(K 0.55
'hE'h?-7 500590	a:8 MoH4 AD500-9	)=#e*1!b TO52S1F2	=A!rZG Ø0.5	]#Cc7wa 0.2	Uks%Mo9on 0.8	[YP{%1*RM 0.55
3&>0'h 500306	HKr}"`I. AD500-9	$*VZa3B\ TO52S2	T/A2Y+@N; Ø0.5	tKS[ 0.2	IU<lF)PF$ 0.8	dQ:F5\|p 0.55
m}u)C&2> 500156	k3H0$1 AD500-9	wZZ~!"O& TO52S3	XmD(&3;v- Ø0.5	obE8iG@H 0.2	=n5n 0.8	O/\|))H?C 0.55
AT)b/ycC 501196	m% 3D AD800-9	Ml$<x"Q TO52S1	z3]W # Ø0.8	?m5EXe 0.5	]Zt]wnL+ 2	63 'X#S 0.9
aW*k,\:e 501197	s;YbZ*oaMe AD1100-9	^GAJ9AF@( TO52S1	DI8<0.L Ø1.13	q\}+]\|nGs 1	H<[~V0= 4	]+46r!r\| 1.3
{aNpk,n 501208	/2zan} AD1500-9	I ^m TO5i	0Dna+V/jI Ø1.5	yhYF "~CM 1.77	jQzl!f1c3 2	Nf^<pT[* 2
E(j#R" 501198	#gqh0 27 AD3000-9	mM72>1~L* TO5i	hO&b\#@~ Ø3	R2n 2mQ< 7.07	aUzCKX%>C 30	Lj(cCtb) 2
?WHf%Ie2( 500161	&}[P{53sr AD5000-9	('SId@ TO8i	?*yyne Ø5	^t5My[R 19.63	_<LL@IX 60	Kc?4q=7q 3
i? ~-% 500756	,#UZp\zZ* AD230-9-400M	RzjUrt TO5	*9"x0bth AD230-9-400M-TO5 is a high frequency optical data receivercomprising an Avalanche Silicon Photodiode and a transimpedance amplifier ina hermetically sealed TO-5 package.
cu($mjC@T 500490	}1e4u{ AD500-9-400M	K\rQb TO5	hp)^s7H AD500-9-400M-TO5 is a high frequency optical data receivercomprising an Avalanche Silicon Photodiode and a transimpedance amplifier ina hermetically sealed TO-5 package.
E{&MmrlL, Multi-Element Array
a3<:F2=~\ 501099	29,ET}~ 8AA0.4-9	z'"7zLQ SOJ22GL	tLWw<)t APD Array 8 Elements, QE>80% at760-910nm with NTC
Q0Ft.b 501098	H#_Zv] 16AA0.13-9	8Rwk o6x SOJ22GL	d]]z ) APD Array 16 Elements, QE>80% at760-910nm with NTC
*u1q7JFQk 500038	az6& 16AA0.13-9	bu\|.Jw" DIL18	+ODua@ULFB APD Array 16 Elements, QE>80% at760-910nm
Z-Qp9G' 501097	4MzQH-U>/ 16AA0.4-9	(MI>7\| '; SOJ22GL	nf0u:M"fm APD Array 16 Elements, QE>80% at760-910nm
k?14'X*7yu 50130802	80*hi)ux[ 25AA0.04-9	cx$IWQf2 BGA	);h(D!D, APD Array 25 (5×5) elements, QE>80% at760-910nm with PTC
<ToBVGX 50130802	mkn1LzE\|F 25AA0.16-9	Z5>~l BGA	}+9?)f{?@ APD Array 25 (5×5) elements, QE>80% at760-910nm with PTC
SlG v 50130702	A/>Q5) 64AA0.04-9	N s+g9+<A BGA	ki9&AFs2X APD Array 64 (8×8) elements, QE>80% at760-910nm with PTC
&/? Ct!_ 501207	,r~+ 9i0N QA4000-9	F'Y ad TO8Si	Or5?Gt Quadrant Avalanche Photodiode, QE>80%at 760-910nm
$+'H000x Series 10: NIR sensitivity enhanced -1064nm (specifically for laser rangefinders, targeting systems or anyapplications using YAG lasers or similar NIR radiation sources)
2bNOn%! Order #	vd4@jZ5 Type		dtC@cK/,D Active Area		HU $"o6ap Dark Current	2'Dl$DH Rise Time
	:+,;5 Chip	`F7]M Package	Cg): Q8 Size	XMuZ}u[U Area	t]LiFpy2IC M=100	^HSxE M=100 1064nm
	:+,;5 Chip	`F7]M Package	>ou=}/< mm	4k;FZo]S mm2	OoSk^U) nA	dH^6K0J ns
EL?(D 500953	`I5^zi8 AD500-10	fHup&\|. TO5i	zeHF-_{ Ø0.5	lGd'_~'= 0.2	r)iEtT!p* 1.5	6{y7e L3! 4
Cs6`lX > 501233	%#x4wi AD800-10	86r"hy~ TO5i	AHb_BgOU* Ø0.8	c@t?R$c 0.5	_Je4&KU 3	&kg^g%% 5
RV~fml9c 500883	IOl_J>D]F AD1500-10	G(&[1V%x TO5i	a: "1LnvR Ø1.5	$o[-xNn1 1.77	m-AF&( ;K 7	FU3K?A B 5
<~smBd 50123401	Ei4^__g\' AD4000-10	4[gmA TO8Si	7rjl-FUA~ Ø4	GcVQz[E 12.56	ipv5JD[ 50	UM7@c7B? 6
YXA@ c 501387	]01`r/->\ AD800-10	6@N,'a8r TO8S	hd)Jq'MCS High speed, high gain, low noise, lowpower consumption hybrid (AD800-10+TIA)
nGF +a[Z Multi-Element Array
P@7>R7gS 501174	QQl.5'PP QA4000-10	46:<[0Psl/ TO8Si	\O\|SPhaIf Quadrant Avalanche Photodiode, High QE at850-1070nm

如有需要，可直接联系我们，也可以登录官网查找所需要的产品：
网址：http://www.newopto.com
邮箱：Sales@NewOpto.com
手机：188-5711-5252
电话：0571-85152711

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