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2010-05-09 10:08 |
高功率LED製程技術
高功率LED製程技術 ^;'FC vd
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目录 w0P Atu
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LED 發展 +:3s f%0
GaN發光效率 :_[pZ;-@
Conventional versus Power LED U8OVn(qV
TYNTEK 40 mil Power chip y<kg;-& 8
Snellius Law 全反射臨界角損失 sB0 m^Y'
Light Extraction m+QZ|
Lumileds AlGaInP LED 2sYz$ZGC"#
Improved design of LEDs to increase efficiency /HVxZ2bar
Lumileds AlGaInP LED }poLH S/
Truncated-inverted-pyramid LED KEjMxOv1
Cree Standard and TIP LED的出光表現 8Om4G]*|,
Osram’s InGaN Chip ($Q|9>5,
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鑽石切割與雷射切割 nCDG PzJ
共晶接合 {~`{bnx^]7
Au-Sn phase diagram V3<# _:;
超音波接合 C9 j{:&
專利 Lumileds-3 g>QN9v})
覆晶元件的可靠度 \Nj#1G
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