| cyqdesign |
2010-01-31 21:48 |
半导体器件导论,影印版,作者:(美)尼曼
《半导体器件导论》(影印版)还尽量保持了原书的主要优点:(1)注重基本概念和方法。《半导体器件导论》(影印版)从内容的整体编排到具体章节的叙述,都体现了突出物理概念、强调基本分析方法的指导思想。书中的数学推导和物理分析融为一体,得出的结论不仅对理解物理概念十分重要,而且经得起反复推敲。书中还采用了大量非常清晰的插图,帮助读者更好地理解基本概念。(2)可读性强,便于自学。全书脉络清楚,说理透彻,易于读者理解和掌握。每一章的开头都有引言,告诉读者可以从本章学到什么,应该掌握什么;每一章中都有例题和读者自测题;每一章的最后还有总结、复习提纲和大量习题(其中包含一些采用计算机进行模拟计算的练习题)。通过举例和练习加深读者对基本概念的理解是《半导体器件导论》(影印版)突出的特点。 }c"1;C&{ 《半导体器件导论》(影印版)是美国新墨西哥大学电机与计算机工程系Neamen教授所著的“SereicorlductorPhysics and Devices,3rd edition”一书的改进版本。 Gw0_M& 与原书相比,《半导体器件导论》(影印版)更好地将固体晶格结构、量子力学入门知识、固体的量子理论以及半导体物理和半导体器件有机地结合在一起。利用《半导体器件导论》(影印版),学生只需要具有高等数学和大学普通物理的基础,用一个学期就可以系统地学习到半导体器件的基本理论,从而为进入微电子学研究领域打下一个良好的基础。这一特点也是目前国内出版的同类教材很难达到的。 @vC7j>*4B [attachment=24330] -666|pA jBTXs5q 市场价:¥69.00 ygvX}q 优惠价:¥55.20 为您节省:13.80元 (80折) Wx i|(}
9<9 c^2 GomTec9. Preface xvii ):Vzv CHAPTER 1 F>0[v|LG The Crystal Structure of Solids XYOPX>$T 1.0 Preview 1 a*pwVn 1.1 Semiconductor Materials 2 G9/5KW}- 1.2 Types of Solids 3 y~w -z4 1.3 Space Lattices 4 "K"]/3`k- 1.3.1 Primitive and Unit Cell 4 x*EzX4$x 1.3.2 Basic Crystal Structures 6 =`b/ip5 1.3.3 Crystal Planes and Miller Indices vu&%e\gM 1.3.4 The Diamond Structure 13 Q
UQ"2oC 1.4 Atomic Bonding 15 Ls<.&3X2 1.5 Imperfections and Impurities in Solids 17 7^fpbrj 1.5.1 Imperfections in Solids 17 wClX3l>y 1.5.2 Impurities in Solids 18 b&y"[1` 1.6 Growth of Semiconductor Materials 19 lE8M.ho\ 1.6.1 Growth from a Melt 20 .)7r /1o 1.6.2 Epitaxial Growth 22 $ylQ \Y' 1.7 Device Fabrication Techniques: }SdI _sLe Oxidation 23 f?ImQYqP
1.8 Summary 25 wc3OOyP@0 Problems 27 ",b3C. CHAPTER 2 a^vXwY Theory of Solids 31 5&y;r 2.0 Preview 31 rc*iL 2.1 Principles of Quantum Mechanics 32 T[z]~MJL 2.1.1 Energy Quanta 32 PJ=N.xf} 2.1.2 Wave-Particle Duality Principle 34 PP{CK4 2.2 Energy Quantization and Probability Concepts 36 eYER"E 2.2.1 Physical Meaning of the Wave Function 36 8>E_bxC 2.2.2 The One-Electron Atom 37 Nn"[GB 2.2.3 Periodic Table 40 P <$)v5f 2.3 Energy-Band Theory 41 o)X(;o 2.3.1 Formation of Energy Bands 41 `m~x*)L# 2.3.2 The Energy Band and the Bond Model 45 r((2.,\Z 2.3.3 Charge Carriers——Electrons and Holes 47 _h%
:Tu 2.3.4 Effective Mass 49 9@Iz:!oqb 2.3.5 Metals, Insulators, and Semiconductors 50 V)$y 2.3.6 The k-Space Diagram 52 -/#VD&MJO= 2,4 Density of States Function 55 'f#i@$|] 2.5 Statistical Mechanics 57 ?e`4
sf_~ 2.5.1 Statistical Laws 57 -xJ_5 2.5.2 The Fermi-Dirac Distribution Function B? Vr9H 7n and the Fermi Energy 58 3'd(=hJ45$ 2.5.3 Maxwell-Boltzmann Approximation 62 kQ,#NR/q6 2.6 Summary 64 BFU6?\r Problems 65 4(VVEe CHAPTER 3 L|y4u;-Q The Semiconductor in Equilibrium 70 7,i}M 3.0 Preview 70 %idn7STJ} 3.1 Charge Carriers in Semiconductors 71 N1lhlw6 3.1.1 Equilibrium Distribution of Electrons and Holes 72 y:U'3G- 3.1.2 The no and Po Equations 74 (M1HNIM;( 3.1.3 The Intrinsic Carrier Concentration 79 (xp<@- 3.1.4 The Intrinsic Fermi-Level Position 82 DFgr,~ 3.2 Dopant Atoms and Energy Levels 83 z7[TgL7 3.2.1 Qualitative Description 83 >&@hm4 3.2.2 Ionization Energy 86 y_^w| 3.2.3 Group III-V Semiconductors 88 9,?\hBEu 3.3 Carrier Distributions in the Extrinsic Semiconductor 89 [0_JS 2KE 3.3.1 Equilibrium Distribution of Electrons and Holes 89 i6"/GSA
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y$n7'W6 市场价:¥69.00 O*hd@2hd 优惠价:¥55.20 为您节省:13.80元 (80折) M18H1e@Al
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