| cyqdesign |
2010-01-31 21:48 |
半导体器件导论,影印版,作者:(美)尼曼
《半导体器件导论》(影印版)还尽量保持了原书的主要优点:(1)注重基本概念和方法。《半导体器件导论》(影印版)从内容的整体编排到具体章节的叙述,都体现了突出物理概念、强调基本分析方法的指导思想。书中的数学推导和物理分析融为一体,得出的结论不仅对理解物理概念十分重要,而且经得起反复推敲。书中还采用了大量非常清晰的插图,帮助读者更好地理解基本概念。(2)可读性强,便于自学。全书脉络清楚,说理透彻,易于读者理解和掌握。每一章的开头都有引言,告诉读者可以从本章学到什么,应该掌握什么;每一章中都有例题和读者自测题;每一章的最后还有总结、复习提纲和大量习题(其中包含一些采用计算机进行模拟计算的练习题)。通过举例和练习加深读者对基本概念的理解是《半导体器件导论》(影印版)突出的特点。 (,|,j(=] 《半导体器件导论》(影印版)是美国新墨西哥大学电机与计算机工程系Neamen教授所著的“SereicorlductorPhysics and Devices,3rd edition”一书的改进版本。 Bx?3E^!T 与原书相比,《半导体器件导论》(影印版)更好地将固体晶格结构、量子力学入门知识、固体的量子理论以及半导体物理和半导体器件有机地结合在一起。利用《半导体器件导论》(影印版),学生只需要具有高等数学和大学普通物理的基础,用一个学期就可以系统地学习到半导体器件的基本理论,从而为进入微电子学研究领域打下一个良好的基础。这一特点也是目前国内出版的同类教材很难达到的。 6!<I'M'[e [attachment=24330] PgBEe
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wr1N Preface xvii X=)V<2WO CHAPTER 1 %|-N{> wKy The Crystal Structure of Solids sx,$W3zI'G 1.0 Preview 1 %>|FJ 1.1 Semiconductor Materials 2 `4"8@>D 1.2 Types of Solids 3 T4eJ:u* ; 1.3 Space Lattices 4 bWe2z~dP 1.3.1 Primitive and Unit Cell 4 SB62(#YR 1.3.2 Basic Crystal Structures 6 E0Wc8m " 1.3.3 Crystal Planes and Miller Indices ^C>kmo3J 1.3.4 The Diamond Structure 13 :5YIoC 1.4 Atomic Bonding 15 {cK<iQJ 1.5 Imperfections and Impurities in Solids 17 }M07-qIX{ 1.5.1 Imperfections in Solids 17 t@%w:*& 1.5.2 Impurities in Solids 18 i<uU_g'M 1.6 Growth of Semiconductor Materials 19 @6
he!wW 1.6.1 Growth from a Melt 20 V?mP7 1.6.2 Epitaxial Growth 22 4I4m4^ 1.7 Device Fabrication Techniques: K@.5
Oxidation 23 sY]J!" 1.8 Summary 25 .:S/x{~ Problems 27 :.:^\Q0 CHAPTER 2 %4~"$kE Theory of Solids 31 AL]gK)R 2.0 Preview 31 ^y5A\nz& 2.1 Principles of Quantum Mechanics 32 LU3pCM{ 2.1.1 Energy Quanta 32 DV5hTw0 2.1.2 Wave-Particle Duality Principle 34 LuS@Kf8N+ 2.2 Energy Quantization and Probability Concepts 36 t{k:H4 2.2.1 Physical Meaning of the Wave Function 36 6H#:rM 2.2.2 The One-Electron Atom 37 F`D$bE;| 2.2.3 Periodic Table 40 *|rdR2R! 2.3 Energy-Band Theory 41 mxlh\'b 2.3.1 Formation of Energy Bands 41 J;4x$BI 2.3.2 The Energy Band and the Bond Model 45 XYcZ;Z 9: 2.3.3 Charge Carriers——Electrons and Holes 47 Qz(D1>5I? 2.3.4 Effective Mass 49 $QJ3~mG2 2.3.5 Metals, Insulators, and Semiconductors 50 0R?1|YnB 2.3.6 The k-Space Diagram 52 -P]O t>%S 2,4 Density of States Function 55 r)<A YX]J 2.5 Statistical Mechanics 57 tP'v;$)9F 2.5.1 Statistical Laws 57 u>>|ZPe 2.5.2 The Fermi-Dirac Distribution Function **q8vhJM and the Fermi Energy 58 vC]X>P5 Px 2.5.3 Maxwell-Boltzmann Approximation 62 kowS| c# 2.6 Summary 64 '|C%X7 Problems 65 J6 ~Sr CHAPTER 3 !LKxZ" The Semiconductor in Equilibrium 70 E\iK_'# 3.0 Preview 70 2Zu9?
L ,I 3.1 Charge Carriers in Semiconductors 71 l*ltS(? 3.1.1 Equilibrium Distribution of Electrons and Holes 72 1RAkqw<E 3.1.2 The no and Po Equations 74 #Xg;E3BM 3.1.3 The Intrinsic Carrier Concentration 79 N* gJu 3.1.4 The Intrinsic Fermi-Level Position 82 .@ H:P 3.2 Dopant Atoms and Energy Levels 83 gT}H B. 3.2.1 Qualitative Description 83 N{Sp-J> 3.2.2 Ionization Energy 86 Dk
`&tr 3.2.3 Group III-V Semiconductors 88 ^".OMS"! 3.3 Carrier Distributions in the Extrinsic Semiconductor 89 Du_5iuMh 3.3.1 Equilibrium Distribution of Electrons and Holes 89 tZ]gVgZg …… %&L13: 市场价:¥69.00 \M`qaFan5^ 优惠价:¥55.20 为您节省:13.80元 (80折) D]~K-[V?l
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